• Title/Summary/Keyword: Volatile Memory

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Non-volatile Molecular Memory using Nano-interfaced Organic Molecules in the Organic Field Effect Transistor

  • Lee, Hyo-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.31-32
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    • 2010
  • In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

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Heat Treatment Effects of Staggered Tunnel Barrier (Si3N4 / HfAlO) for Non-volatile Memory Application

  • Jo, Won-Ju;Lee, Se-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.196-197
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    • 2010
  • NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$$450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.

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Development of Flash Memory Management Algorithm (플래쉬 메모리 관리 알고리즘 개발)

  • Park, In-Gyu
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.38 no.1
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    • pp.26-45
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    • 2001
  • The Flash memory market: is an exciting market that has quickly over the last 10 years. Recently Flash memory provides a high-density. truly non-volatile, high performance read write memory solutions, also is characterized by low power consumption, extreme ruggedness and high reliability. Flash memory is an optimum solution for large nonvolitilc storage operations such as solid file storage, digital video recorder, digital still camera, The MP3 player and other portable multimedia communication applications requiring non-volatility. Regardless of the type of Flash memory, Flash media management software is always required to manage the larger Flash memory block partitions. This is true, since Flash memory cannot be erased on the byte level common to memory, but must be erased on a block granularity. The management of a Flash memory manager requires a keen understanding of a Flash technology and data management methods. Though Flash memory's write performance is relatively slow, the suggested algorithm offers a higher maximum write performance. Algorithms so far developed is not suitable for applications which is requiring more fast and frequent accesses. But, the proposed algorithm is focused on the justifiable operation even in the circumstance of fast and frequent accesses.

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Widely Tunable Adaptive Resolution-controlled Read-sensing Reference Current Generation for Reliable PRAM Data Read at Scaled Technologies

  • Park, Mu-hui;Kong, Bai-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.363-369
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    • 2017
  • Phase-change random access memory (PRAM) has been emerged as a potential memory due to its excellent scalability, non-volatility, and random accessibility. But, as the cell current is reducing due to cell size scaling, the read-sensing window margin is also decreasing due to increased variation of cell performance distribution, resulting in a substantial loss of yield. To cope with this problem, a novel adaptive read-sensing reference current generation scheme is proposed, whose trimming range and resolution are adaptively controlled depending on process conditions. Performance evaluation in a 58-nm CMOS process indicated that the proposed read-sensing reference current scheme allowed the integral nonlinearity (INL) to be improved from 10.3 LSB to 2.14 LSB (79% reduction), and the differential nonlinearity (DNL) from 2.29 LSB to 0.94 LSB (59% reduction).

Evolution of Nonvolatile Resistive Switching Memory Technologies: The Related Influence on Hetrogeneous Nanoarchitectures

  • Eshraghian, Kamran
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.6
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    • pp.243-248
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    • 2010
  • The emergence of different and disparate materials together with the convergence of both the 'old' and 'emerging' technologies is paving the way for integration of heterogeneous technologies that are likely to extend the limitations of silicon technology beyond the roadmap envisaged for complementary metal-oxide semiconductor. Formulation of new information processing concepts based on novel aspects of nano-scale based materials is the catalyst for new nanoarchitectures driven by a different perspective in realization of novel logic devices. The memory technology has been the pace setter for silicon scaling and thus far has pave the way for new architectures. This paper provides an overview of the inevitability of heterogeneous integration of technologies that are in their infancy through initiatives of material physicists, computational chemists, and bioengineers and explores the options in the spectrum of novel non-volatile memory technologies considered as forerunner of new logic devices.

Development of PCM Data Recorder for Telemetry System (원격측정용 PCM 데이터 저장장치 개발)

  • Koh, Kwang-Ryul;Lee, Sang-Bum;Lee, Hyun-Kyu;Kim, Whan-Woo
    • Journal of the Korea Institute of Military Science and Technology
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    • v.14 no.4
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    • pp.607-614
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    • 2011
  • This paper describes the development of pulse code modulation(PCM) data recorder with design, implementation and environmental test. PCM serial data that diverged from telemetry encoder output is used as the input and is reformed to parallel signal through FPGA processing. Controllers construct the packet by the sector and record it into non-volatile memory. Compact flash(CF) memory for data storage media, USB interface for data downloading, and a software for operating status diagnosis and file format conversion are used.