• Title/Summary/Keyword: Visible transmittance

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Influence of Ag Thickness on Electrical and Optical Properties of AZO/Ag/AZO Multi-layer Thin Films by RF Magnetron Sputtering (RF magnetron sputter에 의해 제조된 AZO/Ag/AZO 다층박막의 Ag 두께가 전기적 광학적 특성에 미치는 영향)

  • An Jin-Hyung;Kang Tea-Won;Kim Dong-Won;Kim Sang-Ho
    • Journal of Surface Science and Engineering
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    • v.39 no.1
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    • pp.9-12
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    • 2006
  • Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

Effect of Electron Irradiation Energy on the Properties of GZO/SiO2 Thin Films on Polycarbonate (PC 기판위에 증착된 SiO2/GZO박막의 전자빔 조사에너지에 따른 특성 변화)

  • Heo, Sung-Bo;Park, Min-Jae;Jung, Uoo-Chang;Kim, Dae-Il;Cha, Byung-Chul
    • Journal of Surface Science and Engineering
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    • v.47 no.6
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    • pp.341-346
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    • 2014
  • Ga-doped ZnO (GZO) single layer and $SiO_2/GZO$ bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of $SiO_2/GZO$ thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron's irradiation energy. The $SiO_2/GZO$ films irradiated at 900 eV were showen the lowest resistivity of $7.8{\times}10^{-3}{\Omega}cm$. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of $58^{\circ}$ in this study.

High Performance Materials for Ophthalmic Hydrogel Lens Containing Nanoparticles

  • Kim, Duck-Hyun;Sung, A-Young
    • Journal of Integrative Natural Science
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    • v.9 no.1
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    • pp.16-22
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    • 2016
  • The optical and physical and characteristics of hydrogel ophthalmic lens polymerized with addition of 2,6-difluoropyridine, SiPc(silicon 2,9,16,23-tetra-tert-butyl-29H31H-phthalocyanine dihydroxide) and nanodiamond in the basic hydrogel material were evaluated. In particular, the utility of 2,6-difluoropyridine, SiPc and nanodiamond as a hydrogel ophthalmic lens material was investigated. 2,6-difluoropyridine, SiPc and nanodiamond were used as additives. And also, 2-hydroxyethyl methacrylate, acrylic acid, methyl methacrylate and a cross-linker EGDMA were copolymerized in the presence of AIBN as an initiator. The refractive index of 1.4348~1.4361, water content of 33.30~34.02%, UV-B transmittance of 4.77~67.50%, UV-A transmittance of 1.45~89.19% and visible transmittance of 32.12~92.21% were obtained. The results of hydrogel lens containing 2,6-difluoropyridine (add 5%) showed antibiosis for staphylococcus aureus. The produced copolymer is suitable for hydrogel soft ophthalmic lenses with antibiotic and anti-UV effect.

Effect of the Cu Bottom Layer on the Properties of Ga Doped ZnO Thin Films

  • Kim, Dae-Il
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.185-187
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    • 2012
  • Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

Preparation of ZnO:Al transparent conductive film for Solar cell (태양전지용 ZnO:Al 투명전 도막의 제작)

  • 양진석;성하윤;금민종;신성권;손인환;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.463-466
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    • 2001
  • This detailed study of electrical, crystallographic and optical properties in Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets is described. Optimal transmittance and resistivity was obtained by controlling flow ratio of O$_2$gas. When the O$_2$ gas ratio of 0.25 and substrate temperature R.T., ZnO:Al thin film deposited had strongly oriented c-axis and the lower resistivity ( <10$\^$-4/ $\Omega$cm). The optical transmittance was above 80% in visible range.

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Spray-coated Carbon Nanotube Counter Electrodes for Dye-sensitized Solar Cells

  • Lee, Won-Jae;Lee, Dong-Yun;Kim, In-Sung;Jeong, Soon-Jong;Song, Jae-Sung
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.140-143
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    • 2005
  • Carbon Nanotube(CNTs) counter electrode is a promising alternative to Platinum counter electrode for dye sensitized solar cells (DSSCs). In this study, CNT counter electrodes having different visible light transmittance were prepared on fluorine-doped tin oxide (FTO) glass surface by spray coating method. Microstructural images show that there are CNT-tangled region coated on FTO glass counter electrodes. Using such CNT counter electrodes and screen printed $TiO_2$ electrodes, DSSCs were assembled and its I-V characteristics have been studied and compared. Light energy conversion efficiency of DSSCs increased with decreasing in light transmittance of CNT counter electrode. Efficiency of DSSCs having CNT counter electrode is compatible to that of Pt counter electrode.

Solution-Derived Amorphous Yttrium Gallium Oxide Thin Films for Liquid Crystal Alignment Layers

  • Oh, Byeong-Yun
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.2
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    • pp.109-112
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    • 2016
  • We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.

Multicomponent wide band gap oxide semiconductors for thin film transistors

  • Fortunato, E.;Barquinha, P.;Pereira, L.;Goncalves, G.;Martins, R.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.605-608
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    • 2006
  • The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

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Transparent Conducting Zinc-Indium Oxides Thin Films by an Electron Beam Evaporation Method

  • Lee, Choon-Ho;Kim, Sun-Il
    • Journal of the Korean Ceramic Society
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    • v.41 no.2
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    • pp.102-105
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    • 2004
  • ZnO-In$_2$O$_3$ films were fabricated on Corning 1737 glass substrate by an electron beam evaporation technique and their characteristics were investigated. The composition of ZnO-In$_2$O$_3$ films had a marked effect on the electrical properties of the films. The ZnO-In$_2$O$_3$ films showed superior transparent-conducting characteristics with increase of Zn content. The resistivity and carrier concentration of the film having Zn content of 45 at% are 4.45${\times}$10$^{-3}$ cm and 3.1${\times}$10$^{19}$ cm$^{-3}$ , respectively. Also, the transmittance was higher than 80% throughout the visible range. The average roughness of the film was 14.6 $\AA$ in terms of root mean square.

Characterization of $V_2O_{5}$ as a Counter Electrode for Smart Windows (스마트 윈도우용 $V_2O_{5}$ 대향전극의 특성)

  • 김진;하승호;조봉희;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.28-31
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    • 1994
  • We have investigated the characterization of $V_2O_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The amorphous $V_2O_{5}$ thin films produces comparatively small changes in transmittance in the visible and near infrared compared to the crystalline $V_2O_{5}$ thin films, while the degradation occurs in a-$V_2O_{5}$ thin films with increasing the cycle life time. As the thickness of $V_2O_{5}$ thin films increases from 100 to 600 nm, the magnitude of transmittance modulation decreases. The crystalline $V_2O_{5}$ thin films with thickness around 1000 have electrochromic properties suitable for counter electrode application in lithium based electrochromic smart windows.