• Proceedings of the Korean Society For Composite Materials Conference
• /
• 1999.11a
• /
• pp.36-39
• /
• 1999

Steel tire cords were coated via RF Plasma Polymerization of acetylene in order to enhance adhesion to rubber compounds. Adhesion of tire cords was measured by TACT as a function of plasma polymerization and argon etching conditions such as power, treatment time and chamber pressure. Tested tire cords were analysed by SEM to elucidate the adhesion mechanism. The highest adhesion values were obtained with argon etching condition at 90W, 10min, 30mtorr followed by acetylene plasma polymerization condition at 10W, 30sec., 30mtorr. In SEM analysis, the plasma polymerized tire cord at the optimized condition showed 100% rubber coverage as observed from brass-plated steel tire cords.

• ETRI Journal
• /
• v.24 no.3
• /
• pp.211-220
• /
• 2002

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.18 no.2
• /
• pp.38-43
• /
• 2019

Electrochemical etching is a popular process to apply metal patterning in various industries. In this study, the electrochemical etching using a patterned copper layer was proposed to fabricate multilayered structures. The process consists of electrodeposition, laser patterning, and electrochemical etching, and a repetition of this process enables the production of multilayered structures. In the fabrication of a multilayered structure, an etch factor that reflects the etched depth and pattern size should be considered. Hence, the etch factor in the electrochemical etching process using the copper layer was calculated. After the repetition process of electrochemical etching using copper layers, the surface characteristics of the workpiece were analyzed by EDS analysis and surface profilometer. As a result, multilayered structures with various shapes were successfully fabricated via electrochemical etching using copper layers.

• Korean Journal of Metals and Materials
• /
• v.48 no.11
• /
• pp.1028-1034
• /
• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

• Proceedings of the Korean Society For Composite Materials Conference
• /
• 2002.05a
• /
• pp.143-146
• /
• 2002

Unsized AS-4 carbon fibers were etched by RF plasma and then coated via plasma polymerization in order to enhance adhesion to vinyl ester resin. The gases utilized for the plasma etching were Ar, $N_2 and O_2$, while the monomers used for the plasma polymerization coating were acetylene, butadiene and acrylonitrile. The conditions for the plasma etching and the plasma polymerization were optimized by measuring interfacial adhesion with vinyl ester resin via micro-droplet tests. Among the treatment conditions, the combination of Ar plasma etching and acetylene plasma polymerization provided greatly improved interfacial shear strength (IFSS) of 69MPa compared to 43MPa with as-received carbon fiber. Based on the SEM analysis of failure surface and load-displacement curve, it was assume that the failure might be occurred at the carbon fiber and plasma polymer coating. The plasma etched and plasma polymer coated carbon fibers were subjected to analysis with SEM, XPS, FT-IR or Alpha-Step, and dynamic contact angles and tensile strengths were also evaluated. Plasma polymer coatings did not change tensile strength and surface roughness of fibers, but decreased water contact angle except butadiene plasma polymer coating, possibly owing to the functional groups introduced, as evidenced by FT-IR and XPS.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.173-174
• /
• 2007

Through Silicon Via ( TSV)는 향후3D integration devices (CMOS image sensors) 와 보다 더 직접화되고 진보된 memory stack에 기여 할 것이다. 이는 한층 더 진보된 microprocessors system 을 구축 하리라 본다. 해서 본문은 TSV plasma etching processing 소개와 특히 Bosch process에 대한 개선 방법을 제시하고자 한다.

• Journal of the Semiconductor & Display Technology
• /
• v.8 no.4
• /
• pp.1-5
• /
• 2009

This investigation is applied Taguchi method and the analysis of variance(ANOVA) to the reactive ion etching(RIE) characteristics of $SiO_2$ film coated on a wafer with Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process mixture. Plans of experiments via nine experimental runs are based on the orthogonal arrays. A $L_9$ orthogonal array was selected with factors and three levels. The three factors included etching time, RF power, gas mixture ratio. The etching rate of the film were measured as a function of those factors. In this study, the etching thickness mean and uniformity of thickness of the RIE are adopted as the quality targets of the RIE etching process. The partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. The RIE are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a RIE etching process.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.3
• /
• pp.87-90
• /
• 2005

$SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

• Journal of the Korean Ceramic Society
• /
• v.42 no.10 s.281
• /
• pp.645-648
• /
• 2005

To fabricate a (100) silicon hard master, we used anisotropic wet etching for the embossing. The etching chemical for the sili­con wafer was a TMAH 25$\%$ solution. The anisotropic wet etching produces a smooth sidewall surface inclined at 54.7°, and the surface roughness of the fabricated master is about 1 nm. After spin coating an organic-inorganic sol-gel hybrid resin on a silicon substrate, we used the fabricated master to form patterns on the silicon substrate. Thus, we successfully obtained patterns via the hot embossing technique with the (100) silicon hard master. Moreover, by using a single hydrophobic surface treatment of the master, we succeeded in achieving uniform surface roughness of the embossed patterns for more than ten embossments.

• Textile Coloration and Finishing
• /
• v.9 no.2
• /
• pp.50-56
• /
• 1997

Poly(ethylene terephthalate) (PET) has been etched by sputtering in the presence of argon gas and the resulting surface modifications investigated via weight loss, time of water permeation, half value period, scanning electron microscope(SEM) and color difference measurements. According to increasing sputter etching time, weight loss increased, the time of water permeation and half value period of the sputter etched PET fabrics decreased. Color depth of fabrics increased by increasing sputter etching time. We investigated the fabric surface modification by SEM. Many microcraters on the fabric surface formed by the sputter etching resulted in increase of surface area of the fabric and wettability.