• 제목/요약/키워드: Vertical in-line sputtering

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Fabrication of Al-doped ZnO Thin Films by Vertical In-line DC Magnetron Sputtering

  • Heo, Gi-Seok;Kim, Tae-Won;Lee, Jong-Ho
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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    • pp.41-41
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    • 2008
  • Al-doped ZnO (AZO) thin films have been fabricated by vertical in-line dc magnetron sputtering for transparent conducting oxides (TCOs) applications. The effects of substrate temperature and dc power on the characteristics of AZO thin films are investigated and also optimized the process conditions to get the best electrical and optical properties. The fabricated thin films show a good electrical and optical uniformity within ${\pm}5%$ over the whole area of substrate ($200mm\;{\times}\;200mm$) ; the minimum resistivity of $8\;{\times}\;10^{-4}\;{\Omega}cm$ and the average transmittance of 90% within the visible wavelength range. We have found that the band gap ($E_g$) increases with increasing substrate temperature and dc power, whereas the crystallinity is getting improved with increasing substrate temperature. The binding energy of Zn $2p_{3/2}$ and O 1s is observed to decrease as the substrate temperature increases.

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PDP용 MgO 박막의 스퍼터 연구 (Sputtering of Magnesium Oxide this film for Plasma Display Panel Application)

  • 최영욱;김지현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1732-1734
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    • 2003
  • An MgO thin film sputtering system for the PDP (Plasma Display Panel) applications has been developed. This system was manufactured with a vertical In-Line type of 42 inch, which has the length of 520 mm and the width of 900 mm. A reactive magnetron discharge for this sputtering was generated using an unipolar pulsed power supply which has functions of constant voltage (Max. 500 V) and current (Max. 15 A) control, frequency of $10{\sim}100$ kHz and duty ratio of $10{\sim}60$ %. The experiment was conducted under various conditions : $3{\sim}10$ mTorr of pressure, the ratio of $O_2$/Ar = $0.1{\sim}0.5$, 50 % of duty and power of $0.5{\sim}1.7$ kW. From the experiment, the deposition rate of a static state and a moving state were measured to be about 45 nm/min and 6 nm m/min at the distance of 50 mm between the target and the substrate, respectively.

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