• Agribusiness and Information Management
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• v.6 no.1
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• pp.37-44
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• 2014

This study was conducted to evaluate light intensity and uniformity of two SMD (surface-mount device) type LEDs for protected crop production. A low-power (0.1 W) and a high-power (1 W) LEDs were selected and the intensity and uniformity was evaluated at different vertical (height) and horizontal (distance) intervals. When the horizontal interval of the LED bar was fixed, the light intensity increased and the uniformity decreased as the height decreased. At the 30~40 cm heights, 20~30% of the area showed $200{\pm}20{\mu}molm^{-2}s^{-1}$. As the horizontal distance of the LED bars increased, while the uniformity increased as well, the light intensity decreased. At the distances of 6~10 cm, 17~23% of the area showed $200{\pm}20{\mu}molm^{-2}s^{-1}$. When the LED bars were added to the sides, the light intensity and uniformity were generally improved. Results showed that the light intensity and uniformity depended on the height and interval of the LED bulbs; therefore, optimum arrangement for the crops interested should be determined through experiments.

• 유체기계공업학회:학술대회논문집
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• 2006.08a
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• pp.319-322
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• 2006

The flow characteristics around a floating cylinder in a swirling flow field in a vertical pipe with a length of 600mm and an inner diameter of 100mm is investigated by the use of the Stereoscopic-PIV system. The measurement system consists of two cameras, a Nd-Yag laser and a host computer. Optical sensors(LEDs) were used to detect the location of the floating cylinder and to activate the Stereoscopic-PIV system. A conditional sampling Stereoscopic-PIV system was developed in which the flow fields around the floating cylinder are measured at the events of the activations. It has been verified that the motion of the floating cylinder becomes stable when the azimuthal velocity component of the swirl flow is maintained at stable states.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.353-358
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• 2008

In order to increase extraction efficiency of AlGaInP-based vertical RED LEDs, chemical wet etching technique was produced by using a roughened surface with triangle-like morphology. A commonly used $H_3PO_4$-based solution was applied for chemical wet etching. The light extraction of AlGaInP LED was related to the n-side roughed surface morphology. The morphology of roughed surface is analyzed by the atomic force microscope (AFM). As a result, the roughed surface AlGaInP LED has a root-mean-square (RMS) roughness of 44 nm. The brightness shows 41% increase after roughening n-side surface, as compared to the ordinary flat surface LED.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.139-144
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• 2014

GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.911-914
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• 2011

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.122-129
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• 2003

In the case of a AIGalnP/GaP system rectangular parallelepiped high brightness LED which has side walls etched to be slanted off the vertical direction, we have studied the effects of lossy electrodes and material absorption and etching depth and angle of side walls on its light extraction efficiency. If LEDs have no electrodes, in order to obtain an 80％ light extraction efficiency of a TIP (truncated inverted pyramid) LED, the side-etched LEDs should have an etching angle of 22$^{\circ}$~45$^{\circ}$ and an etching depth of 8~17% of a dice height and an absorption coefficient less than 1 $cm^{-1}$ / In case of etching depth of 16~39% of a dice height, we can obtain a 90% light extraction efficiency of a TIP LED. But when LEDs have two electrodes and no absorption loss, in order to obtain an 80％ light extraction efficiency of a TIP LEBs, the side-etched LEDs should have an etching angle of 25$^{\circ}$-45$^{\circ}$ and an etching depth of 30～36% of a dice height. In case of etching depth of 57~71％ of a dice height, we can obtain a 90％ light extraction efficiency of a TIP LED.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.8
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• pp.24-31
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• 2014

This paper dealt with the LED optical illumination system design for the Masthead navigation light to replace halogen lamps. We made Fresnel lens satisfy luminous intensity distribution of "Convention on the International Regulation for Preventing Collisions at Sea(COLREG)". The optical system is designed by classifying three parts: light source, lens, and cut off plate. The source of light has been made to have the uniform horizontal and vertical light distribution by placing 6 LEDs at intervals of $54^{\circ}$, and as the cylindrical Fresnel lens, the lens has been designed to achieve the uniform horizontal and vertical light distribution in the range of plain light. Finally, the cover has been designed to block the light from the outside of plain light and ultimately met the standards for light distribution of navigation lights. In addition, the validity of design has been verified with manufacturing a trial product.