• Title/Summary/Keyword: Vertical Bridgman method

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Crystal growth and photocurrent of $Mg_{x}Zn_{1-x}$Te single crystals ($Mg_{x}Zn_{1-x}$Te 단결정 성장과 광전류 특성)

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    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.1
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    • pp.6-13
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    • 2001
  • By using a vertical Bridgeman method, single crystalline structures of $Mg_xZn_{1-x}Te(0{\le}X{\le}0.48)$ were grown for various Mg mole compositions. With the increasing Mg fraction, the lattice constant is linearly increased from 6.103 to 6.239$\AA$ for the range of $0{\le}X{\le}0.48$ and the lattice constant of zincblende MgTe was linearly extrapolated to the value of 6.433$\pm$0.002$\AA$. The optical properties of the crystalline structure were characterized with photocurrent measurements. As a results of photocurrent spectra, the single crystalline $Mg_xZn_{1-x}Te$ show the energy bandgap of 2.380 and 2.260eV at 4.2 and 294 K, respectively. The photocurrent peak blueshifts with increasing Mg mole fraction and show the linear dependence of energy bandgap, $E_g$(X)=b+(0.8)X. The extrapolation shows the energy bandgaps of MgTe of 3.18 and 3.06eV at the temperatures of 4.2 and 294K, respectively. Furthermore, the photocurrent peaks redshifts with increasing temperature and the temperature coefficient is given to the value of $dE_g$/dT=-(5.6~$6.1){\times}10^{-4}$eV/K. for the temperature range above 100K.

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Optical Properties of Photoferroelectric Semiconductors III.(Optical Properties of $SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co\;and\;Sb_{1-x}Bi_xSeI:Co$ Single Crystals) (Photoferroelectric 반도체의 광학적 특성 연구 III.($SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, 및 $Sb_{1-x}Bi_xSeI:Co$ 단결정의 광학적 특성에 관한 연구))

  • Hyun, Seung-Cheol;Oh, Seok-Kyun;Yun, Sang-Hyun;Kim, Wha-Tek;Kim, Hyung-Gon;Choe, Sung-Hyu;Kim, Chang-Dae;Yoon, Chang-Sun;Kwun, Sook-Il
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.227-235
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    • 1993
  • $SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.

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