• Journal of the Institute of Convergence Signal Processing
• /
• v.12 no.4
• /
• pp.309-314
• /
• 2011

As a system becomes more complex, a design relies more heavily on a methodology based on high-level abstraction and functional verification. SystemVerilog includes characteristics of hardware design language and verification language in the form of extensions to the Verilog HDL. However, the OOP of System Veri log does not allow multiple inheritance. In this paper, we propose adoption of SystemC to introduce multiple inheritance. After being created, a SystemC unit is combined with a SystemVerilog-based verification environment using SystemVerilog DPI and ModelSim macro. Employing multiple inheritance of SystemC makes a design of a verification environment simple and easy through source code reuse. Moreover, a verification environment including SysemC unit has a benefit of reconfigurability due to OOP.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.463-470
• /
• 2014

A Verilog model is proposed for transmission lines to perform the all-Verilog simulation of high-speed chip-to-chip interface system, which reduces the simulation time by around 770 times compared to the mixed-mode simulation. The single-pulse response of transmission line in SPICE model is converted into that in Verilog model by converting the full-scale analog signal into an 11-bit digital code after uniform time sampling. The receiver waveform of transmission line is calculated by adding or subtracting the single-pulse response in Verilog model depending on the transmitting digital code values with appropriate time delay. The application of this work to a USB 2.0 high-speed PHY interface reduces the simulation time to less than three minutes with error less than 5% while the mixed-mode simulation takes more than two days for the same circuit.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.3
• /
• pp.162-168
• /
• 2011

In this paper, we propose a new Verilog-A current-voltage model for multi-level-cell PCRAMs. This model can describe the PCRAM operation not only in full SET and RESET states but also in the partial resistance states. And, 3 PCRAM operating regions of SET-RESET, Negative Differential Resistance, and strong-ON are unified into one equation in this model thereby any discontinuity that may introduce a convergence problem cannot be found in the new PCRAM model. The percentage error between the measured data and this model is as small as 7.4% on average compared to 60.1% of the previous piecewise model. The parameter extraction which is embedded in the Verilog-A code can be done automatically.

• Journal of information and communication convergence engineering
• /
• v.19 no.4
• /
• pp.263-268
• /
• 2021

Although the compact capacitance model of point tunneling types of tunneling field-effect transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been reported. In this study, a compact capacitance model of an L-shaped TFET (LTFET), a line tunneling type of TFET, is proposed using the previously developed surface potentials and current models of P- and L-type LTFETs. The Verilog-A LTFET model for simulation program with integrated circuit emphasis (SPICE) was also developed to verify the validation of the compact LTFET model including the capacitance model. The SPICE simulation results using the Verilog-A LTFET were compared to those obtained using a technology computer-aided-design (TCAD) device simulator. The current-voltage characteristics and capacitance-voltage characteristics of N and P-LTFETs were consistent for all operational bias. The voltage transfer characteristics and transient response of the inverter circuit comprising N and P-LTFETs in series were verified with the TCAD mixed-mode simulation results.

• Journal of the Institute of Convergence Signal Processing
• /
• v.10 no.4
• /
• pp.274-279
• /
• 2009

The flow of a universal system-level design methodology consists of system specification, system-level hardware/software partitioning, co-design, co-verification using virtual or physical prototype, and system integration. In this paper, verification environments based-on SystemVerilog and SystemC, one is native-code co-verification environment which makes prompt functional verification possible and another is SystemVerilog layered testbench which makes clock-level verification possible, are implemented. In native-code co-verification, HW and SW parts of SoC are respectively designed with SystemVerilog and SystemC after HW/SW partitioning using SystemC, then the functional interaction between HW and SW parts is carried out as one simulation process. SystemVerilog layered testbench is a verification environment including corner case test of DUT through the randomly generated test-vector. We adopt SystemC to design a component of verification environment which has multiple inheritance, and we combine SystemC design unit with the SystemVerilog layered testbench using SystemVerilog DPI and ModelSim macro. As multiple inheritance is useful for creating class types that combine the properties of two or more class types, the design of verification environment adopting SystemC in this paper can increase the code reusability.

• Journal of Information Display
• /
• v.10 no.3
• /
• pp.101-106
• /
• 2009

In this study, a physical OLED analog behavior model for SPICE simulation was described using the Verilog-A language. The model was presented through theoretical equations for the J-V characteristics of OLED derived according to the internalcarrier emission equation based on a diffusion model at the Schottky barrier contact, and the mobility equation based on the Pool-Frenkel model. The accuracy of this model was examined by comparing it with the results of the device simulation that was conducted.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.6
• /
• pp.728-732
• /
• 2014

Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1212-1215
• /
• 2009

The theoretical equations for J-V characteristics in an OLED was derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The J-V characteristics of OLED are presented using a behavioral model for analog systems (Verilog-A language), and the accuracy of this model was verified by comparing with the device simulation results.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.431-434
• /
• 2008

The physical OLED analog behavioral model for SPICE simulation has been described using Verilog-A language. The model is based on the carrier-balance between the hole and electron injected through Schottky barrier at anode and cathode. The accuracy of this model was examined by comparing with the results from device simulation.

• Journal of KIISE:Computing Practices and Letters
• /
• v.15 no.3
• /
• pp.211-215
• /
• 2009

As Programmable Logic Controllers (PLCs) are increasingly used to implement safety critical systems such as nuclear instrumentation & control system, formal verification for PLC based programs is becoming essential. This paper proposes a formal verification technique for PLC program implemented with function block diagram (FBD). In order to verify an FBD program, we translate an FBD program into a Verilog model and perform model checking using SMV model checker We developed a tool, FBD Verifier, which translates FBD programs into Verilog models automatically and supports efficient and intuitive visual analysis of a counterexample. With the proposed approach and the tool, we verified large FBD programs implementing reactor protection system of Korea Nuclear Instrumentation and Control System R&D Center (KNICS) successfully.