• Journal of Korea Spatial Information System Society
• /
• v.6 no.1 s.11
• /
• pp.101-117
• /
• 2004

Standards are essential to facilitate the efficient use of GIS data. International Standards such as ISO TC211's 19100 series and various technical specifications from OpenGIS Consortium are some of the examples of efforts to maintain the interoperability among GIS applications. Marine GIS is no exception to this rule and in this context. developing standards for marine GIS is also in urgent needs. Using the same meaning and definition for the features commonly found in marine GIS applications is one of the ways to increase the interoperability among systems. One of the key requirements for maintaining the standard meanings for features is to build a common feature catalogue. This paper examines the concept of feature catalogue and describe the ways in which the feature catalogue can be organized. To identify the common features found in various marine GIS applications, a comprehensive search has been made to collect and analyze the features used in various applications. To maintain the interoperability with the National GIS (NGIS) system, the features used in various NGIS applications have been analyzed as well. The result of these analyses are used to create a comprehensive list of common features for marine GIS. This paper then explains the common feature catalogue for marine GIS and the provides the appropriate classification and coding systems for the common features. In addition, a registration tool for registering the common features into the standard registry has been developed in this study. This Web-based tool can be used to input features into the feature catalogue by various applications and also to maintain a standard-compliant feature catalogue by standard agencies.

• Journal of the Korean Applied Science and Technology
• /
• v.31 no.2
• /
• pp.218-224
• /
• 2014

Biodegradable conductive composite films of polylactic acid(PLA) were prepared with various amounts of polyaniline(PAni) doped with dodecylbenzenesulphonic acid (DBSA) by solution blending technique to identify their mechanical and electric properties. 15 mol% of DBSA doped PAni was easily obtained by polymerizing of aniline in the presence of APS and DBSA in THF at $0^{\circ}C$. FE SEM characterization showed that PAni were well spread on the PLA domains. The tensile strength of composite film with 15 wt% of PAni was significantly decreased from $565.3kg_f/cm^2$ for PLA film itself to $309.7kg_f/cm^2$. Elongations of all PAni/PLA composite films were also decreased up to 3-6%. Electrical conductivity of $2.9{\times}10^{-3}$ S/cm could be achieved for the composite film containing 15 wt% of PAni-DBSA. Thermal stability of these composite films measured by thermogravimetric analysis(TGA) showed a slight decrease with the amount of PAni in PAni/PLA composite films at temperature lower than $300^{\circ}C$. However, the final weight of char was strongly depended with the amount of PAni in original composite films. Conclusively, PAni/PLA composite films containing more than a 15 wt% of PAni could be used for intercepting electromagnetic and preventing electrostatic applications.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.34 no.1
• /
• pp.1-7
• /
• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

• The Journal of Korean Society for Radiation Therapy
• /
• v.30 no.1_2
• /
• pp.49-63
• /
• 2018

Purpose : The purpose of this study is investigating the changes of treatment plan and comparing skin dose with or without the skin flash. To investigate optimal applications of the skin flash, the changes of skin dose of each plans by various thicknesses of skin flash were measured and analyzed also. Methods and Material : Anthropomorphic phantom was scanned by CT for this study. The 2 fields hybrid IMRT and the 6 fields static IMRT were generated from the Eclipse (ver. 13.7.16, Varian, USA) RTP system. Additional plans were generated from each IMRT plans by changing skin flash thickness to 0.5 cm, 1.0 cm, 1.5 cm, 2.0 cm and 2.5 cm. MU and maximum doses were measured also. The treatment equipment was 6MV of VitalBeam (Varian Medical System, USA). Measuring device was a metal oxide semiconductor field-effect transistor(MOSFET). Measuring points of skin doses are upper (1), middle (2) and lower (3) positions from center of the left breast of the phantom. Other points of skin doses, artificially moved to medial and lateral sides by 0.5 cm, were also measured. Results : The reference value of 2F-hIMRT was 206.7 cGy at 1, 186.7 cGy at 2, and 222 cGy at 3, and reference values of 6F-sIMRT were measured at 192 cGy at 1, 213 cGy at 2, and 215 cGy at 3. In comparison with these reference values, the first measurement point in 2F-hIMRT was 261.3 cGy with a skin flash 2.0 cm and 2.5 cm, and the highest dose difference was 26.1 %diff. and 5.6 %diff, respectively. The third measurement point was 245.3 cGy and 10.5 %diff at the skin flash 2.5 cm. In the 6F-sIMRT, the highest dose difference was observed at 216.3 cGy and 12.7 %diff. when applying the skin flash 2.0 cm for the first measurement point and the dose difference was the largest at the application point of 2.0 cm, not the skin flash 2.5 cm for each measurement point. In cases of medial 0.5 cm shift points of 2F-hIMRT and 6F-sIMRT without skin flash, the measured value was -75.2 %diff. and -70.1 %diff. at 2F, At -14.8, -12.5, and -21.0 %diff. at the 1st, 2nd and 3rd measurement points, respectively. Generally, both treatment plans showed an increase in total MU, maximum dose and %diff as skin flash thickness increased, except for some results. The difference of skin dose using 0.5 cm thickness of skin flash was lowest lesser than 20 % in every conditions. Conclusion : Minimizing the thickness of skin flash by 0.5 cm is considered most ideal because it makes it possible to keep down MUs and lowering maximum doses. In addition, It was found that MUs, maximum doses and differences of skin doses did not increase infinitely as skin flash thickness increase by. If the error margin caused by PTV or other factors is lesser than 1.0 cm, It is considered that there will be many advantages in with the skin flash technique comparing without it.

• Progress in Medical Physics
• /
• v.20 no.3
• /
• pp.145-151
• /
• 2009

This study aims to evaluate CT (Computed Tomography) characteristics through the estimation of HU (Hounsfield Unit) and the corresponding variations using coefficient of variation values for various materials as a function of physical factor. HU values for various materials with varying densities as a function of physical factor were measured using MDCT (Siemens SOMATOM Sensation 4, Germany). The results showed that the HU values were decreased and increased as a function of kVp and material density, respectively. Especially, the HU values for bone and iodine at 140 kVp were 32% and 42% smaller than those at 80 kVp, respectively. In case of iodine, the HU values also decreased and increased as a function of kVp and concentration, respectively. While the HU values were fixed as a function of mAs. The decreased ratio of HU values between 80 keV and 140 keV was different at various concentration and maximum difference was shown as 1.73 at 3% concentration. These results indicated that it may be possible to separate composition of materials, e.g. iodine and bone, using single source CT. The results showed that dual energy techniques using single source CT can be applied to material separation and expand CT imaging techniques to other practical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.7
• /
• pp.574-577
• /
• 2011

In this study, we use the $2.5cm{\times}7.5cm$ soda lime glass as the substrate. We used the ultrasonicator. Glass was dipped in the acetone, methanol and DI water respectively for 10 minutes. Ar(99.99%)gas was used as the sputtering gas. We varied the RF power between 100~175 W with 25 W steps. Base pressure was kept by turbo molecular pump at $3.0{\times}10^{-6}$ torr. Working pressure was kept by injection of Ar gas. ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the RF power. Electrical properties were measured by hall effect methods at room temperature. The resistivity, carrier concentration, and hall mobility of ZnS deposited on glass substrate as a function of sputtering power. It can be seen that as the sputtering power increase from 100 to 175 W, the resistivity of the films on glass decreased significantly from $8.1{\times}10^{-2}$ to $1.2{\times}10^{-3}\;{\Omega}{\cdot}cm$. This behavior could be explained by the effect of the sputtering power on the mobility and carrier concentration. When the RF power increases, the carrier concentration increases slightly while the resistivity decreases significantly. These variation originate from improved crystallinity and enhanced substitutional doping as the sputtering power increases.

• Macromolecular Research
• /
• v.13 no.4
• /
• pp.314-320
• /
• 2005

Crosslinked poly(vinyl alcohol) (PVA) membranes were prepared at various crosslinking temperatures using poly(acrylic acid-co-maleic acid) (PAM) containing different PAM contents. The thermal properties of these PVA/PAM membranes prepared at various reaction temperatures were characterized using differential scanning calorimetry (DSC). The proton conductivity and methanol permeability of PVA/PAM membranes were then investigated as PAM content was varied from 3 to 13 wt%. It was found that the proton and methanol transport were dependent on PAM content in their function both as crosslinking agent and as donor of hydrophilic -COOH groups. Both these properties decreased monotonously with increasing PAM concentration. The proton conductivities of these PVA/PAM membranes were in the range from $10^{-3}\;to\;10^{-2}S/cm$ and the methanol permeabilities from $10^{-7}\;to\;10^{-6}cm^{2}/sec$. In addition, the effect of operating temperature up to $80^{\circ}C$ on ion conductivity was examined for three selected membranes: 7, 9 and 11 wt% PAM membranes. Ion conductivity increased with increasing operating temperature and showed and S/cm at $80^{\circ}C$, respectively. The effects of crosslinking and ionomer group concentration were also examined in terms of water content, ion exchange capacity (IEC), and fixed ion concentration. In addition, the number of water molecules per ionomer site was calculated using both water contents and IEC values. With overall consideration for all the properties measured in this study, $7{\sim}9\;wt%$ PAM membrane prepared at $140^{\circ}C$ exhibited the best performance. These characteristics of PVA/PAM membranes are desirable in applications related to the direct methanol fuel cell (DMFC).

• Membrane Journal
• /
• v.21 no.1
• /
• pp.30-38
• /
• 2011

Composite membranes based on sulfonated poly(aryl ether) sulfone (SPAES) with different sulfated zirconia nanoparticles ($s-ZrO_2$) ratio are synthesized and investigated for the improvement of the hydration and the proton conductivity at high temperature and no humidification for fuel cell applications. X-ray diffraction technique is employed to characterize the structure and the size of $s-ZrO_2$ nanoparticles. The sulfation effect of $s-ZrO_2$ nanoparticles is verified by FT-IR analysis. The properties of the SPAES composite membranes with the various $s-ZrO_2$ ratio are evaluated by ion exchange capacity and water content. The proton conductivities of the composite membranes are estimated at room temperature with full hydration and at the various high temperature without external humidification. The composite membrane with 5 wt% $s-ZrO_2$ shows the highest proton conductivity. The proton conductivities are $0.9292\;S\;cm^{-1}$ at room temperature with full hydration and $0.0018\;S\;cm^{-1}$ at $120^{\circ}C$ without external humidification, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.306.1-306.1
• /
• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• Journal of Institute of Control, Robotics and Systems
• /
• v.20 no.12
• /
• pp.1196-1203
• /
• 2014

Recently, UFRs (Unmanned Flying Robots) have begun to be utilized in various areas for civilian and military applications. Due to this increased utilization, accidents involving UFRsare also increasing. To prevent or monitor accidents caused by UFRs, high-accuracy positioning information is one of the most important technical elements. This paper proposes an efficient UFR monitoring system which provides accurate UFR positioning information with low-cost onboard elements; a small ARM module based on an embedded Linux operating system, a low-cost single frequency GPS receiver with a cheap patch antenna, and a versatile wireless network interface module. The ground monitoring system employs a dual frequency GPS receiver to generate exact UFR coordinates with cm-level accuracy. By processing the UFR measurements based on the Inverse RTK (Real Time Kinematic) method, the ground monitoring system determines the cm-level accurate coordinates of the UFR. The feasibility of the proposed UFR monitoring system was evaluated by three experiments in terms of data loss and accuracy.