• 제어로봇시스템학회논문지
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• 제13권7호
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• pp.711-717
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• 2007

Location information will become increasingly important for future Pervasive Computing applications. Location tracking system of a moving device can be classified into two types of architectures: an active mobile architecture and a passive mobile architecture. In the former, a mobile device actively transmits signals for estimating distances to listeners. In the latter, a mobile device listens signals from beacons passively. Although the passive architecture such as Cricket location system is inexpensive, easy to set up, and safe, it is less precise than the active one. In this paper, we present a passive location system using Cricket Mote sensors which use RF and ultrasonic signals to estimate distances. In order to improve accuracy of the passive system, the transmission speed of ultrasound was compensated according to air temperature at the moment. Upper and lower bounds of a distance estimation were set up through measuring minimum and maximum distances that ultrasonic signal can reach to. Distance estimations beyond the upper and the lower bounds were filtered off as errors in our scheme. With collecting distance estimation data at various locations and comparing each distance estimation with real distance respectively, we proposed an equation to compensate the deviation at each point. Equations for proposed algorithm were derived to calculate relative coordinates of a moving device. At indoor and outdoor tests, average location error and average location tracking period were 3.5 cm and 0.5 second, respectively, which outperformed Cricket location system of MIT.

• Bulletin of the Korean Chemical Society
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• 제26권2호
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• pp.303-308
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• 2005

A miniaturized time-of-flight mass spectrometer with an electron impact ionization source and sheet membrane introduction has been developed. The advantages and features of this mass spectrometer include high sensitivity, simple structure, low cost, compact volume with field portability, and ease of operation. A mass resolution of 400 at m/z 78 has been obtained with a 25 cm flight path length. Under optimized conditions, the detection limits for the volatile organic compounds (VOCs) studied were 0.2-10 ppm by volume with linear dynamic ranges greater than three orders of magnitude. The response times for various VOCs using a silicone membrane of 127 $\mu$m thickness were in the range 4.5-20 s, which provides a sample analysis time of less than 1 minute. These results indicate that the membrane introduction/time-of-flight mass spectrometer will be useful for a wide range of field applications, particularly for environmental monitoring.

• 한국축산식품학회지
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• 제32권3호
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• pp.293-300
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• 2012

This study investigated the effects of a low-voltage ohmic heating process (2.5 and 3.8 V/cm) on the thawing characteristics and NaCl diffusion of pork. The thawing rate of pork was dependent on the applied voltages and brine salinities, and few differences were obtained in pork quality parameters (color, water-holding capacity, and shear force) regarding the different treatments. The NaCl concentration of pork after ohmic thawing was higher than that following brine-immersion thawing, however, the NaCl diffusion did not differ from when fresh meat was immersed in brine. For application of the ohmic process in fresh pork, various ohmic pulses were generated in order to prevent the meat from overheating, and the results indicated that the ohmic process was a better way to enhance NaCl diffusion compared with immersing pork at high temperature. Although the mechanisms involved in NaCl diffusion at low-voltage electric field strength were unclear, the present study demonstrated that the ohmic process has a potential benefit in the application of meat processing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.31-34
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• 2003

($Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ (BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on alumina substrates using the BSCT paste. The structural and the electrical properties were investigated for various composition ratio and sintering temperature. BSCT thick film thickness, obtained by four printings, was approximately 110 ~ 120 ${\mu}m$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at $1420^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5kV/cm, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.995-997
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• 2009

$In_2O_3$ thin-film transistors (TFTs) were fabricated on various dielectrics [$SiO_2$ and self-assembled nanodielectrics (SANDs)] by spin-coating a $In_2O_3$ film precursor solution consisting of methoxyethanol (solvent), ethanolamine (EAA, base), and $InCl_3$ as the $In^{3+}$ source. Importantly, an optimized film microstructure characterized by the high-mobility $In_2O_3$ 004 phase, is obtained only within a well-defined base: $In^{3+}$ molar ratio. The greatest electron mobilities of ~ 44 $cm^2$, for EAA:$In^{3+}$ molar ratio = 10, $V^{-1}s^{-1}$, is measured for $n^+$-Si/SAND/$In_2O_3$/Au devices. This result combined with the high $I_{on}:I_{off}$ ratios of ~ $10^6$ and very low operating voltages (< 5 V) is encouraging for high-speed applications.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• Journal of Magnetics
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• 제21권2호
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• pp.159-163
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• 2016

Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제13권8호
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• pp.4227-4240
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• 2019

In this paper, we present our proposed magnetic induction based wireless communication system. The proposed system is designed to perform communication as well as distance measurement in underground environments. In order to improve the communication quality, we propose and implement the adaptive channel compensation technique. Based on the fact that the channel may be fast time-varying, we keep track of the channel status each time the data is received and accordingly compensate the channel coefficient for any change in the channel status. By using the proposed compensation technique, the developed platform can reliably communicate over distances of 10m while the packet error rate is being maintained under 5%. We also implement the distance measurement block that is useful for various applications that should promptly estimate the location of nearby nodes in communication. The distance between two nodes in communication is estimated by generating a table describing pairs of the magnetic signal strength and the corresponding distance. The experiment result shows that the platform can estimate the distance of a node located within 10m range with the measurement error less than 50cm.

• Mass Spectrometry Letters
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• 제12권2호
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• pp.47-52
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• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.