• 전자공학회논문지 IE
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• v.47 no.4
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• pp.1-9
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• 2010

This paper describes a ultrasonic signal processing front-end IC for distance range meter and body detector. The burst shaped ultrasonic signal is generated by a self oscillator and its frequency range is about 40[kHz]-300[kHz]. The generated ultrasonic signal transmit through piezo resonator. The another piezo device transduce from received ultrasonic signal to electrical signals. This front-end IC contained low noise amplifier, band pass filter, busrt detector and time pulse generator and so on. This IC has two type of new idea for improve function and performance, which are self frequency control (SFC) and Variable Gain Control amplifier (VGC) scheme. The dimensions and number of external parts are minimized in order to get a smaller hardware size. This device has been fabricated in a O.6[um] double poly, double metal 40[V] High Voltage CMOS process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12B
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• pp.1637-1647
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• 2001

Multi-Code CDMA (MC-CDMA) can not only be integrated easily with a conventional system, but also achieve good spectral efficiency and high processing gain. However, it suffers from high value of peak-to-average power ratio (PAPR). In this paper, we propose the Multi-Phase CDMA (MP-CDMA) system that can provide variable rate service and is not susceptible to the non-linear characteristics of amplifier. The clipping is introduced between at the output of multi-code modulator and at the input of MPSK modulator in order to improve the performance of MPSK chip demodulator and reduce the system complexity, The system performances are compared for the different Number of codes and different clipping levels, respectively. The optimum clipping level is also evaluated for the different number of codes in both, AWGN and frequency flat fading channel.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.2
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• pp.228-231
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• 2013

This paper proposes a new method that reduces RCS(rader cross section) of the aluminum plate using a oscillation system composed of a VGA(variable gain amplifier) and a phase shifter. Once the oscillation system receives the external-RF signal through a probe on aluminum plate, it makes an amplified signal with a specific phase to cancel the signal reflected from the aluminum plate. The signal transmitted from the oscillation system has the same amplitude and out of phase with the reflected signal. And it can be controlled by the VGA and the phase shifter in the oscillation system. In order to validate the performance of the proposed oscillation system, FEM simulator was used and we measured how much an amplitude of the signal reflected from the aluminum plate rotated in phi direction is reduced in an anechoic chamber.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.11
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• pp.1121-1129
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• 2009

In this paper, the UWB(Ultra-Wide Band) modules such as a pulse generator and the LNA(Low-Noise Amplifier) with AGC(Auto Gain Control) are designed to construct a cross-borehole pulse radar system, of which performance is compared with the existing system. The budget and specification of the radar system are determined by calculating the total path loss of the underground medium including an empty cavity. The pulse generator is fabricated to have the repeatation frequency 40 kHz, the pulse width lower than 5 ns and the peak signal level +73 dBm. The UWB LNA is designed to have the noise figure 3.77 dB, the variable gain range 100 dB and the frequency range of 20 MHz to 200 MHz. Compared with the existing system in an actual test site, the implemented system renders it possible to detect the blind area due to the UWB LNA with low noise figure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.443-451
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• 2010

This paper describes a fully integrated CMOS low-IF mobile-TV RF tuner for Band-III T-DMB/DAB applications. All functional blocks such as low noise amplifier, mixers, variable gain amplifiers, channel filter, phase locked loop, voltage controlled oscillator and PLL loop filter are integrated. The gain of LNA can be controlled from -10 dB to +15 dB with 4-step resolutions. This provides a high signal-to-noise ratio and high linearity performance at a certain power level of RF input because LNA has a small gain variance. For further improving the linearity and noise performance we have proposed the RF VGA exploiting Schmoock's technique and the mixer with current bleeding, which injects directly the charges to the transconductance stage. The chip is fabricated in a 0.18 um mixed signal CMOS process. The measured gain range of the receiver is -25~+88 dB, the overall noise figure(NF) is 4.02~5.13 dB over the whole T-DMB band of 174~240 MHz, and the measured IIP3 is +2.3 dBm at low gain mode. The tuner rejects the image signal over maximum 63.4 dB. The power consumption is 54 mW at 1.8 V supply voltage. The chip area is $3.0{\times}2.5mm^2$.

• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Journal of Biomedical Engineering Research
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• v.22 no.6
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• pp.503-510
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• 2001

In this paper. we describe a 32-channel bioimpedance measurement system It consists of 32 independent constant current sources of 50 kHz sinusoid. The amplitude of each current source can be adjusted using a 12-bit MDAC. After we applied a pattern of injection currents through 32 current injection electrodes. we measured induced boundary voltages using a variable-gain narrow-band instrumentation amplifier. a Phase-sensitive demodulator. and a 12-bit ADC. The system is interfaced to a PC for the control and data acquisition. We used the system to detect anomalies with different resistivity values in a saline Phantom with 290mm diameter The accuracy of the developed system was estimated as 2.42% and we found that anomalies larger than 8mm in diameter can be detected. We Plan to improve the accuracy by using a digital oscillator improved current sources by feedback control, Phase-sensitive A/D conversion. etc. to detect anomalies smaller than 1mm in diameter.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.11
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• pp.1566-1573
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• 2016

This paper presents a beam-forming receiver with polyphase In-phase/Quadrature-phase (I/Q) network for airborne communication. In beam-forming receiver, the insertion loss (IL) difference between input path increases the receiver noise figure (NF). The major element for generating IL difference is the impedance variation of phase shifter. In order to maintain a constant IL in every phase, this paper propose a lossless polyphase I/Q network based beam-forming receiver. The proposed lossless polyphase I/Q network has low Q-factor and high impedance for drive back-end VGA (Variable gain amplifier) block with low insertion loss. The 2-stage VGA controls in-phase and quadrature-phase amplitude level for vector summation. The proposed beam-forming receiver prototype is fabricated in TSMC $0.18{\mu}m$ CMOS process. The prototype cover the $360^{\circ}$ with $5.6^{\circ}$ LSB. The average RMS phase error and amplitude error is approximately $1.6^{\circ}$ and 0.3dB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.28-34
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• 2010

In this paper, the transceiver for RFID reader using 13.56MHz as a carrier frequency and meeting International Standard ISO 14443 type A, 14443 type B and 15693 is presented. The receiver is composed of envelope detector, VGA(Variable Gain Amplifier), filter, comparator to recovery the received signal. The proposed automatic reference voltage generator, positive peak detector, negative peak detector, and data slicer circuit can adjust the decision level of reference voltage over the received signal amplitudes. The transmitter is designed to drive high voltage and current to meet the 15693 specification. By using inductor loading circuit which can swing more than power supply and drive large current even under low impedance condition, it can control modulation rate from 30 percent to 5 percent, 100 perccnt and drive the output currents from 5 mA to 240 mA depending on standards. The 13.56 MHZ RFID reader is implemented in $0.18\;{\mu}m$ CM08 technology at 3.3V single supply. The chip area excluding pads is $1.5mm\;{\times}\;1.5mm$.