• Title/Summary/Keyword: Varactor 다이오드

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Voltage Controlled Injection-Locked Oscillator Design at 2.4 GHz Band for Wideband Applications (광대역 응용을 위한 2.4 GHz 대역 전압 제어 주입 동기 발진기 설계)

  • Yoon, Won-Sang;Lee, Hun-Sung;Lee, Hee-Jong;Pyo, Seong-Min;Kim, Young-Sik;Han, Sang-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.3
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    • pp.292-298
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    • 2011
  • In this paper, a voltage controlled injection-locked oscillator(VC-ILO) is proposed for wideband applications. From the control of the free-running frequency by a varactor diode, the wide frequency locking range can be obtained for low-level injected signals. The proposed VC-ILO is implemented on an FR-4 substrate with a thickness of 0.8 mm. The free-running frequencies of the oscillator is 2.39~2.52 GHz at the control voltage of 0~5 V. While the frequency locking range of over 50 MHz is presented for -10 dBm injected signal level at a fixed frequency, the locking range of over 90 MHz can be achieved for -30 dBm by controlling the free-running frequency.

A Design of a VCO for an Advance Warning System of the Vehicle′s Speed Limitation (차량 속도 제한 사전 경보기용 전압 제어 발진기 설꼐)

  • 김동현;최익권
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.11
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    • pp.1075-1081
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    • 2004
  • In this paper, a VCO of a general advance warning system for vehicle's speed limitation in the X-band used in Japan is designed using a small signal scattering coefficient of PHEMT. A varactor diode that wide tuning range and series resistance 0 H is used for designing the VCO and -85 dBc/Hz of phase noise at 10 kHz of offset frequency is obtained by adjusting the reflection coefficient between the micro-strip line and the varactor device which determines transistor's operation voltage and resonant frequency, In addition +4.5 dBm of basic frequency signal output level and -25.6 dEc of the second harmonic constraint are acquired. Sample that produce in this paper could confirm that more excellent special quality appears than existing products in sensitivity.

Low Phase Noise VCO Using Spiral Resonator (Spiral 공진기를 이용한 저위상 잡음 전압 제어 발진기)

  • Jwa, Dong-Woo;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.7
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    • pp.77-80
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    • 2008
  • In this paper, low phase noise VCO using novel compact microstrip spiral resonator is proposed. A spiral resonator has super compact dimension, low insertion losses in the passband and high level of rejection in the stopband with sharp cutoff and a large coupling coefficient value, which makes a high Q value, and has reduced the phase noise. To increase the tuning range of VCO, varactor diode has been connected at the tunable negative resistance in VCO. This VCO has presented the oscillation frequency of $5.686{\sim}5.841GHz$, harmonics -29.83 dBc and phase noise of $-115.16{\sim}-115.17dBc/Hz$ at the offset frequency of 100 KHz.

Design of Microstrip Antenna to Tune Resonant Frequency with Voltage Control (공진 주파수 전압 제어 마이크로스트립 안테나 설계)

  • Kim, Young-Ro;Woo, Jong-Myung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.8
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    • pp.688-693
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    • 2009
  • In this paper, a half wave-length microstrip antenna was proposed to be able to continuously tune the resonant frequency in the stated area of UHF ISM band. By loading varactor diodes at both edges of the half wavelength antenna, where the electric field is the strongest, and varying the voltage in order to tune the electrical resonance length continuously, it is possible to automatically recover the resonant frequency and input impedance shifted by surrounding environment. When the microstrip antenna(center resonant frequency: 425 MHB) was tested, by adjusting the each voltages of varactor diodes from DC 0.6 to BC 3.0 volts, the resonant frequency under 20 dB return loss was varied 385 to 465 MHz. The peak gain was -0.2 dBd and return loss -10 dB bandwidth was 3.3 MHz(0.8 %).

A 2 GHz Compact Analog Phase Shifter with a Linear Phase-Tune Characteristic (2 GHz 선형 위상 천이 특성을 갖는 소형 아날로그 위상천이기)

  • Oh, Hyun-Seok;Choi, Jae-Hong;Jeong, Hae-Chang;Heo, Yun-Seong;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.1
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    • pp.114-124
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    • 2011
  • In this paper, we present a 2 GHz compact analog phase shifter with linear phase-tune characteristic. The compact phase shifter was designed base on a lumped all pass network and implemented using a ceramic substrate fabricated with thin-film technique. For a linear phase-tune characteristic, a capacitance of the varactor diode for a tuning voltage was linearized by connecting series capacitor and subsequently produced an almost linear capacitance change. The inductor and bias circuit in the all pass network was implemented using a spiral inductors for small size, which results in the size reduction to $4\;mm{\times}4\;mm$. In order to measure the phase shifter using the probe station, two CPW pads are included at the input and output. The fabricated phase shifter showed an insertion loss of about 4.2~4.7 dB at 2 GHz band and a total $79^{\circ}$ phase change for DC control voltage from 0 to 5 V, and showed linear phase-tune characteristic as expected in the design.

Fabrication and Characteristics of a Varactor Diode for UHF TV Tuner Operated within Low Tuning Voltage (저전압 UHF TV 튜너용 바렉터 다이오드의 제작 및 특성)

  • Kim, Hyun-Sik;Moon, Young-Soon;Son, Won-Ho;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.23 no.3
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    • pp.185-191
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    • 2014
  • The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

Design of the Broad Band Phase Shifter for DTV Receiver (DTV(Digital TV) 수신 모듈용 광대역 가변 위상기의 설계)

  • 한기진;김종필;나형기
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.3
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    • pp.296-303
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    • 2003
  • In this paper, a design method is proposed for the reflection type phase shifter applied to the DTV(Digital TV) receiver, and a phase shifter is designed by using the design equations to satisfy the phase shifting range over 180 degrees for frequency range from 470 MHz to 860 MHz, the receiving band of DTV. From the proposed method, it is possible that the systematic design of the reflection type phase shifter with desired phase shifting range and insertion loss. In addition, it is found that the realized phase shifter satisfies the given specifications.

A Triangular Microstrip Antenna with T-Shaped Slits for Tunable Dual-Band Applications (T자 모양 슬릿 구조를 이용한 이중 대역 공진 주파수 변환 삼각형 마이크로스트립 안테나)

  • Lee, Keon-Myung;Sung, Young-Je;Kim, Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.2
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    • pp.141-146
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    • 2009
  • A triangular microstrip antenna with T-shaped slits is proposed for tunable dual-band applications. The proposed antenna is designed using chip capacitors as a prototype. From this result the capacitor can be replaced to a varactor diode to control capacitance value. Since the input impedance of the antenna can be varied with the value of the chip capacitors on the T-shaped slits, the resonant frequency may be changed. The return losses are better than 10 dB at the lower band of $0.78{\sim}1.21$ GHz and 20 dB at the upper band of $1.97{\sim}2.17$ GHz, respectively. This antenna has the bandwidth of about 10 MHz and 50 MHz at each band. The peak gains of the antenna yield 0 dBi at the lower band and 3 dBi at the upper band, respectively. Details of the antenna design are described, and its performances are presented and analyzed.

A Tuable Dual-Band Bandpass Filter Design Using Variable Characteristic Transmission Lines (가변 특성 임피던스 전송 선로를 이용한 가변 이중 대역 대역 통과 여파기)

  • Chaudhary, Girdhari;Jeong, Yong-Chae;Lim, Jong-Sik;Kim, Dong-Su;Kim, Jun-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.9
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    • pp.852-857
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    • 2011
  • In this paper, the application of a variable characteristic impedance transmission line that can be used to design a dual-band bandpass filter(BPF) is presented. The proposed filter offers a fixed first frequency passband and a controllable second passband. The tuning of the second passband is achieved by varying the characteristic impedance of and open shunt stub line in a stub loaded resonator(SLR) with the help of a defected ground structure(DGS) transmission line and varactor diodes. In order to validate the proposed structure, a two stage dual-band BPF with three transmission zeros was implemeted and experimentally verified based on its theoretical predictions and simulations.

13.56 MHz Wireless Power Transfer System Using Loop Antennas with Tunable Impedance Matching Circuit (가변 임피던스 정합 회로를 갖는 루프 안테나를 이용한 13.56 MHz 무선 전력 전송 시스템)

  • Won, Do-Hyun;Kim, Hee-Seung;Jang, Byung-Jun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.5
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    • pp.519-527
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    • 2010
  • In this paper, we proposed a 13.56 MHz wireless power transfer system using loop antennas with tunable impedance matching circuits. In general, a wireless power transfer system shows an impedance mismatching due to a reflected impedance, because a coupling coefficient is varied with respect to separation distance between two resonating antennas. The proposed system can compensate the effect of this impedance mismatch owing to tunable impedance matching circuits using varactor diodes. Therefore, transmission efficiency is enhanced, moreover, the center frequency of the system is not changed, regardless of separation distance between two antennas. In order to demonstrate the performance of the proposed system, a wireless power transfer system with tunable impedance matching circuits is designed and implemented, which has a pair of loop antennas with a dimension of $30\;cm{\times}30\;cm$ cm. The input return loss, coupling coefficient, efficiency, and input impedance variation with respect to a distance between loop antennas were measured. From measured results, the proposed system shows enhanced performances than the case of the general fixed $50\;{\Omega}$ impedance matching circuits. Therefore, we verified that the proposed wireless power transfer system using the proposed impedance matching scheme will be able to ensure robust operation even when the separation distance of antennas is varied.