• Korean Journal of Materials Research
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• v.32 no.10
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• pp.435-441
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• 2022

We report the synthesis and gas sensing properties of bare and ZnO decorated TeO₂ nanowires (NWs). A catalyst assisted-vapor-liquid-solid (VLS) growth method was used to synthesize TeO₂ NWs and ZnO decoration was performed using an Au-catalyst assisted-VLS growth method followed by a subsequent heat treatment. Structural and morphological analyses using X-ray diffraction (XRD) and scanning/transmission electron microscopies, respectively, demonstrated the formation of bare and ZnO decorated TeO₂ NWs with desired phase and morphology. NO₂ gas sensing studies were performed at different temperatures ranging from 50 to 400 ℃ towards 50 ppm NO₂ gas. The results obtained showed that both sensors had their best optimal sensing temperature at 350 ℃, while ZnO decorated TeO₂ NWs sensor showed much better sensitivity towards NO₂ relative to a bare TeO₂ NWs gas sensor. The reason for the enhanced sensing performance of the ZnO decorated TeO₂ NWs sensor was attributed to the formation of ZnO (n)/ TeO₂ (p) heterojunctions and the high intrinsic gas sensing properties of ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

• Journal of the Korean Electrochemical Society
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• v.12 no.2
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• pp.189-195
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• 2009

$\beta-Ga_{2}O_{3}$ nanorods were synthesized by chemical vapor deposition method using nickel-oxide nanoparticle as a catalyst and gallium metal powder as a source material. The average diameter of nanorods was around 160 nm and the average length was $4{\mu}m$. Also, we confirmed that the synthesis of nanorods follows the vapor-solid growth mechanism. From the results of X-ray diffraction and HR-TEM observation, it can be found that the synthesized nanorods consisted of a typical core-shell structure with single-crystalline $\beta-Ga_{2}O_{3}$ core with a monoclinic crystal structure and an outer amorphous gallium oxide layer. Li/$\beta-Ga_{2}O_{3}$ nanorods cell delivered capacity of 867 mAh/g-$\beta-Ga_{2}O_{3}$ at first discharge. Although the Li/$\beta-Ga_{2}O_{3}$ nanorods cell showed low coulombic efficiency at first cycle, the cell exhibited stable cycle life property after fifth cycle.