• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.291-297
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• 2013

ZnO nanowires were synthesized by vapor-liquid-solid (VLS) process using ZnO and graphite powders on the sapphire substrate coated with an Au film as a catalyst. ZnO nanowires had two prominent emission bands; i) near-band edge (NBE) emission band at 380 nm, and ii) a relatively stronger deep level (DL) emission band ($I_{NBE}/I_{DL}$ <1). In order for the ZnO nanowires to be utilized as an effective material for UV emitting devices, the photoluminescence intensity of NBE needs to be improved with the decreased intensity of DL. In the current study, hydrogen plasma treatment was performed to improve the photoluminescence characteristics of ZnO nanowires. With the hydrogen plasma treatment time of more than 120 sec, the extent of performance improvement was gradually decreased. However, the intensity ratio of NBE to DL ($I_{NBE}/I_{DL}$) was significantly improved to about 4 with a relatively short plasma treatment time of 90 sec, suggesting hydrogen plasma treatment is a promising approach to improve the photoluminescence properties of ZnO nanowires.

• Journal of the Korean Institute of Gas
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• v.2 no.3
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• pp.25-36
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• 1998

Explosion and fires can occur in all segments of chemical and petroleum industries because of complexity of process, usage and storage of flammable and reactive chemicals, and operating conditions of high pressure and temperatures. Especially chemical plants have high possibility of the occurrence of BLEVE(Boiling Liquid Expanding Vapor Explosion)and Fireball. In this study, a computer program was developed for the effect assessment of BLEVE and Fireball. BLEVE was analysed by three explosion models of physical explosion model, isothermal expansion model and adiabatic expansion model and Fireball using solid model. The parametric sensitivity analysis has been done for the models of BLEVE and Fireball. The damage by BLEVE and Fireball of Benzene and Toluene and m-Xylene were estimated.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.05a
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• pp.57-57
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• 2018

The electrorefining process is generally composed of two recovery steps in pyroprocessing - the deposit of uranium onto a solid cathode and the recovery of the remaining uranium and TRU elements simultaneously by a liquid cadmium cathode. The liquid cathode processing is necessary to separate cadmium from the actinide elements since the actinide deposits are dissolved or precipitated in a liquid cathode. Distillation process was employed for the cathode processing. It is very important to avoid a splattering of cadmium during evaporation due to the high vapor pressure. In this study, a multi-layer porous round cover was proposed and examined to develop a splatter shield for the Cd distillation crucible. Cadmium vapor can be released through the holes of the shield, whereas liquid drops can be collected in the multiple hemisphere. The collected drops flow on the round surface of the cover and flow down into the crucible. The crucible cover was fabricated and tested in the Cd distiller. The cover was made with three stainless steel round plates with a diameter of 33.50 mm. The distance between the hemispheres and the diameter of the holes are 10 and 1 mm, respectively. About 40 grams of Cd and about 4 grams of Bi was distilled at a reduced pressure for two hours at $470^{\circ}C$. After the Cd distillation experiment, cadmium was not detected and more than 90 % of Bi remained in the ICP-OES analysis. Therefore the crucible cover can be a candidate for the splatter shield of the Cd distillation crucible. Further development of the crucible cover is necessary for the decision of the optimum cover geometry and the operating conditions of the Cd distiller.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.05a
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• pp.191-195
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• 2009

In the solid rocket propellant combustion, dynamic phase change from solid to liquid to vapor occurs across the melt layer. During the burning surface, micro scale bubbles form as liquid and gas phases are mixed in the intermediate zone between the propellant and the flame. The experimentally measured thickness of this layer called the foam layer is approximately 1 micron at 1 atmosphere. In this paper, we present a new melting layer model derived from the classical phase change theory. The model results show that the surface of burning grows and propagate uniformly at a velocity of $r=ap^n$.

• Journal of Powder Materials
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• v.13 no.5 s.58
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• pp.305-312
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• 2006

Amorphous carbon nanotubes were synthesized by a reaction of benzene, ferrocene and Na mixture in a small autoclave at temperatures as low as $400^{\circ}C$. The resulting carbon nanotubes were short and straight, but their inner hole was filled with residual products. The addition of quartz to the reacting mixture considerably promoted the formation of carbon nanotubes. A careful examination of powder structure suggested that the nanotubes in this process were mainly formed by surface diffusion of carbon atoms at the surface of solid catalytic particles, not by VLS(vapor-liquid-solid) mechanism.

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.45-49
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• 2015

Process gases with vapor or liquid phase as well as gas phase may experience alteration in itself or be contaminated in the fluid pipe to the process chamber. And thus it result in as particles or defects on the substrates in semiconductor, LCD, LED manufacturing. Purifiers and filters are used for control of contamination. However, none of detection device is available in the delivery line. In this paper, we propose simple device with lighting and sensing in order to predict contamination of the fluid or the tube wall. For some general purpose gases, it showed constant voltage output regardless of the flow rates. But, the smoke and the moisture in the air lowered the figure due to its concentration. Numerical values for several solid and liquid media were obtained. And, the operating temperature tendency was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.168-174
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• 2009

High water vapour content in air can cause a number of problems as for human or surrounding materials. For human a high water vapour can create physiological stress, discomfort, and also can encourage ill health. While, the cause for the environment is can accelerate the corrosion of metals, accelerate the growth of spores and mould, can reduce the electrical resistance of insulators and etc. Desiccant systems have been proposed as energy saving alternatives to vapor compression air conditioning for handling especially the latent load and also sensible load. Use of liquid desiccants offers several design and performance advantages over solid desiccants, especially when solar energy is used for regeneration. The liquid desiccants contact the gas inside the packed tower of liquid desiccant solar cooling system and the heat transfer and mass transfer will occur. This thesis is trying to study the characteristics inside the packed tower of dehumidifier systems. This characteristics consist of mass transfer rate, heat transfers rate, human comfort and energy that consume by the system. Those characteristics were affected by air flow rates, air temperature and humidity, and desiccant temperature and all that variation will influence the performance of the systems. The results of this thesis later on can be used to determine the best performance of the systems.

• Journal of the Korean Ceramic Society
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• v.35 no.12
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.