• Journal of Korean Society for Atmospheric Environment
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• 제19권E3호
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• pp.137-148
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• 2003

In this study, we examined the influence of long-range transport of dust particles and air pollutants on the photochemistry of NO$_3$on Jeju Island, Korea (33.17 N, 126.10$^{\circ}$E) during the Asian Dust-Storm (ADS) period of April 2001. Three ADS events were observed during the periods of 10∼12, 13∼14, and 25∼26 April. Average concentration level of nighttime NO$_3$on Jeju Island during the ADS period was estimated to be about 2 x 10$^{8}$ molecules cm$^{-3}$ ( - 9 pptv). Decreases in NO$_3$levels during the ADS period was likely to be determined mainly by the enhancement of the $N_2$O$_{5}$ heterogeneous reaction on dust aerosol surfaces. The reaction of N20s on aerosol surfaces was a more important sink for nighttime N03 during the ADS due to the significant loading of dust particles. The reaction of $N_2$O$_{5}$ with NMHCs and the gas-phase reaction of N20s with water vapor were both significant loss mechanisms during the study period, especially during the NADS. However, dry deposition of these oxidized nitrogen species and a heterogeneous reaction of NO$_3$were of no importance. Short-term observations of $O_3$, NO$_2$, DMS, and SO$_2$in the MBL indicated that concentrations of most of these chemical species were different between the ADS and non - Asian - Dust-Storm (NADS) periods, implying that their levels were affected sensitively by the differences in air mass trajectories.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.454-454
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• 2011

Graphene shows unusual electronic properties, such as carrier mobility as high as 10,000 $cm^2$/Vs at room temperature and quantum electronic transport, due to its electronic structure. Carrier mobility of graphene is ten times higher than that of Silicon device. On the one hand, quantum mechanical studies have continued on graphene. One of them is quantum Hall effect which is observed in graphene when high magnetic field is applied under low temperature. This is why two dimension electron gases can be formed on Graphene surface. Moreover, quantum Hall effect can be observed in room temperature under high magnetic field and shows fractional quantization values. Quantum Hall effect is important because quantized Hall resistances always have fundamental value of h/$e^2$ ~ 25,812 Ohm and it can confirm the quantum mechanical behaviors. The value of the quantized Hall resistance is extremely stable and reproducible. Therefore, it can be used for SI unit. We study to measure quantum Hall effect in CVD graphene. Graphene devices are made by using conventional E-beam lithography and RIE. We measure quantum Hall effect under high magnetic field at low temperature by using He4 gas closed loop cryostat.

• Membrane and Water Treatment
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• 제9권4호
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• pp.221-231
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• 2018

A new procedure to produce poly(vinylidene fluoride)/boron nitride hybrid membrane is presented for application in membrane distillation (MD) process. The influence of hexagonal boron nitride (h-BN) incorporation on the performance of the polymeric membranes is studied through the present investigation. For this aim, h-BN nanopowders were successfully synthesized using the simple chemical vapor deposition (CVD) route and subsequent solvent treatments. The resulting h-BN nanosheets were blended with poly(vinylidene fluoride) (PVDF) solution. Then, the prepared composite solution was subjected to phase inversion process to obtain PVDF/h-BN hybrid membranes. Various examinations such as scanning electron microscopy (SEM), wettability, permeation flux, mechanical strength and liquid entry pressure (LEP) measurements are performed to evaluate the prepared membrane. Moreover, Air gap membrane distillation (AGMD) experiments were carried out to investigate the salt rejection performance and the durability of membranes. The results show that our hybrid PVDF/h-BN membrane presents higher water permeation flux (${\sim}18kg/m^2h$) compared to pristine PVDF membrane. In addition, the experimental data confirms that the prepared nanocomposite membrane is hydrophobic (water contact angle: ${\sim}103^{\circ}$), has a porous skin layer (>85%), as well competitive fouling resistance and operational durability. Furthermore, the total salt rejection efficiency was obtained for PVDF/h-BN membrane. The results prove that the novel PVDF/h-BN membrane can be easily synthesized and applied in MD process for salt rejection purposes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.179-179
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• 2010

1차원 나노구조를 갖는 ZnO를 성장하기 위해 Laser ablation, Chemical vapor deposition (CVD), Chemical transport method, Molecular beam epitaxy, Sputtering 등의 다양한 형성법들이 이용되어지고 있다. 특히 대량생산과 경제성 측면에서 많은 장점을 가지고 있는 CVD를 이용한 ZnO 성장 및 응용 연구가 활발하게 수행되고 있다. 본 연구에서는 Thermal CVD를 이용하여 반응물질과 기판 사이의 거리, 기판온도, $O_2$/Zn 비율 등의 성장변수를 변화시켜 ZnO 나노구조를 성장하고 구조 및 광학적 특성을 연구하였다. Scanning electron microscope를 통한 구조 특성평가 결과 반응물질과 기판 사이의 거리가 13 cm 이하의 조건에서 ZnO 나노구조들은 나노판(Nanosheet)과 나노선(Nanowire)이 혼재하여 성장된 것을 보였다. 그리고 반응물질과 기판사이의 거리가 15 cm 이상부터 나노판이 없어지고 수직한 ZnO 나노막대(Nanorod)가 형성되었다. 상온 Photoluminescence 스펙트럼에서 반응물질과 기판사이의 거리가 5에서 15 cm로 증가할수록 결함 (Defect)에 의해 발생된 515 nm 파장의 최대세기 (Maximum intensity)가 10배 이상 감소한 반면, ZnO 나노구조에 의한 378 nm 파장의 NBE발광 (Near band edge emission)은 8배 이상 증가하였다. 이러한 구조 및 광학적 결과로부터, 질서 없이 성장된 것보다 수직 성장된 ZnO 나노구조의 결정질(Crystal quality)이 좋은 것을 확인하였다. 이를 바탕으로 성장변수에 따른 ZnO 나노구조의 형성 메커니즘을 Zn와 O 원자의 성장거동을 기반으로 한 모델을 이용하여 해석하였다.

• Current Photovoltaic Research
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• 제10권2호
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• pp.33-38
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• 2022

Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (J_SC). In this study, we have demonstrated a path to overcome deficiency in J_SC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (T_RTA), also it is observed that film structure changes from cube-like to plate-like structure with T_RTA. The maximum J_SC of 23.1 mA cm^-2 was observed for 400℃ with an open-circuit voltage (V_OC) of 0.140 V for the same temperature. The highest performance of 2.21% with J_SC of 18.6 mA cm^-2, V_OC of 0.290 V, and fill factor (FF) of 40.9% is observed for a T_RTA of 300℃. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in J_SC is approximately 80% while a loss in V_OC of about 20% has been observed.

• Nuclear Engineering and Technology
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• 제47권5호
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• pp.608-616
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• 2015

The migration of silver (Ag) in silicon carbide (SiC) and $^{110m}Ag$ through SiC of irradiated tristructural isotropic (TRISO) fuel has been studied for the past three to four decades. However, there is no satisfactory explanation for the transport mechanism of Ag in SiC. In this work, the diffusion coefficients of Ag measured and/or estimated in previous studies were reviewed, and then pre-exponential factors and activation energies from the previous experiments were evaluated using Arrhenius equation. The activation energy is $247.4kJ{\cdot}mol^{-1}$ from Ag paste experiments between two SiC layers produced using fluidized-bed chemical vapor deposition (FBCVD), $125.3kJ{\cdot}mol^{-1}$ from integral release experiments (annealing of irradiated TRISO fuel), $121.8kJ{\cdot}mol^{-1}$ from fractional Ag release during irradiation of TRISO fuel in high flux reactor (HFR), and $274.8kJ{\cdot}mol^{-1}$ from Ag ion implantation experiments, respectively. The activation energy from ion implantation experiments is greater than that from Ag paste, fractional release and integral release, and the activation energy from Ag paste experiments is approximately two times greater than that from integral release experiments and fractional Ag release during the irradiation of TRISO fuel in HFR. The pre-exponential factors are also very different depending on the experimental methods and estimation. From a comparison of the pre-exponential factors and activation energies, it can be analogized that the diffusion mechanism of Ag using ion implantation experiment is different from other experiments, such as a Ag paste experiment, integral release experiments, and heating experiments after irradiating TRISO fuel in HFR. However, the results of this work do not support the long held assumption that Ag release from FBCVD-SiC, used for the coating layer in TRISO fuel, is dominated by grain boundary diffusion. In order to understand in detail the transport mechanism of Ag through the coating layer, FBCVD-SiC in TRISO fuel, a microstructural change caused by neutron irradiation during operation has to be fully considered.

• 한국결정성장학회지
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• 제22권4호
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• pp.183-189
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• 2012

고온 열수송용 재료로 이용되는 Hastelloy X의 표면처리에 따른 고온물성 개선에 대한 연구를 수행하였다. Hastelloy X 기판 상에 각각 PVD법인 Arc discharge 및 Sputtering을 이용하여 TiAlN 및 $Al_2O_3$ 박막을 표면 코팅(overlay coating) 하였고, 분위기 분말을 이용하여 Al을 금속표면을 통해 확산시키는 방법인 Pack cementation법을 이용한 Al 확산코팅(diffusion coating: aluminiding)법을 이용한 표면처리를 수행하였다. 이들 표면처리가 Ni-Cr계 합금의 고온열처리에서 생성되는 두꺼운 불균질 산화물($Cr_2O_3$)형성 억제에 미치는 효과와 조성 및 표면미세구조가 물성에 미치는 영향에 대해 알아보기 위해, 표면처리 된 Hastelloy X 샘플들을 공기 및 헬륨가스 분위기에서 $1000^{\circ}C$로 열처리 하였으며, 열처리된 전후 시편들에 대해 상형성, 미세구조 및 고온 물성 변화를 측정하였다. 이러한 실험결과를 통하여 표면코팅법에 의한 TiAlN 및 $Al_2O_3$ 박막에 비해 Al 확산코팅한 경우 두꺼운 불균질 산화물($Cr_2O_3$)형성이 억제되어 보다 균질한 미세구조와 높은 내마모성 등 높은 고온 안정성을 보여주는 것을 확인할 수 있었다.

• 한국자기학회지
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• 제19권4호
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• pp.121-125
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• 2009

비정질 $Ge_{1-x}Mn_x$ 박막을 $400^{\circ}C$에서 $700^{\circ}C$까지 온도범위에서 각 3분씩 고진공챔버($10^{-8}$ torr)에서 열처리하였고, as-grown 시료와 열처리한 시료의 전기적 특성과 자기수송특성을 연구하였다. 성분함량은 energy dispersive X-ray spectroscopy(EDS)와 x-ray photoelectron spectroscopy(XPS)로 측정하였으며, 박막의 구조분석은 x-ray diffractometer(XRD)와 transmission electron microscopy(TEM)를 이용하였다. 자성특성은 여러 범위의 자기장에서 Magnetic property measure system(MPMS)를 이용하였다. 박막의 전기적 특성은 standard four-point probe와 Physical property measurement system(PPMS)로 측정하였으며, van der Pauw 방법을 사용하여 Anomalous Hall effect를 측정하였다. X-ray 회절 패턴 분석을 통해 $500^{\circ}C$에서 3분 동안 열처리한 시료는 여전히 비정질 상태인 것을 알 수 있었으며, $600^{\circ}C$의 열처리 온도에서 결정화를 확인할 수 있었다. as-grown $Ge_1$_$_xMn_x$ 박막과 열처리한 $Ge_{1-x}Mn_x$ 박막을 온도에 따른 비저항 값의 변화를 측정하였고, 반도체의 특성을 보이는 것을 확인할 수 있었다. 또한 열처리 온도가 높을수록 비저항도 증가하는 것을 관찰할 수 있었다. $700^{\circ}C$에서 열처리한 $Ge_1$_$_xMn_x$ 박막은 저온에서 negative magnetoresistance(MR)을 확인할 수 있었고, MR ratio는 10 K에서 약 8.5 %를 보였다. 모든 MR 그래프에서 curve의 비대칭을 확인 할 수 있었으며, anomalous Hall Effect는 약하지만 250 K까지 관측이 되었다.