• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.6.1-6.1
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• 2011

Nanoscale block copolymer (BCP) patterns have been pursued for applications in sub-30 nm nanolithography. BCP self-assembly processing is scalable and low cost, and is well-suited for integration with existing semiconductor fabrication techniques. However, one of the major technical challenges for BCP self-assembly is limited tunability in pattern geometry, dimension, and functionality. We suggest methods for extending the degree of tunability by choosing highly incompatible polymer blocks and utilizing solvent vapor treatment techniques. Siloxane BCPs have been developed as self-assembling resists due to many advantages such as high etch-selectivity, good etch-resistance, long-range ordering, and reduced line-edge roughness. The large incompatibility leads to extensive degree of pattern tunability since the effective volume fraction can be easily manipulated by solvent-based treatment techniques. Thus, control of the microdomain size, periodicity, and morphology is possible by changing the vapor pressure and the mixing ratio of selective solvents. This allows a range of different pattern geometry such as dots, lines and holes and critical dimension simply by changing the processing conditions of a given block copolymer without changing a polymer chain length. We demonstrate highly extensive tunability (critical dimension ~6~30 nm) of self-assembled patterns prepared by a siloxane BCP with extreme incompatibility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.45-45
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• 2010

This paper discusses the simulation and LI(light impulse) test of the shieldless vacuum interrupter concept. The shields of vacuum interrupter play an important role in absorbing the metal vapor. But shield distort the electric field distribution of inner vacuum interrupter. Therefore, the insulation efficiency will improve. if shield of vacuum interrupter inside does not exist. As a result, FEM simulation show that improve distribution of electrical field and equi-potential line. But LI test result dissimilar to FEM simulation result. Shieldless vacuum interrupter model lower BIL(breakdown impulse light) than vacuum interrupter have installed shield. Because conditioning process occurred metal vapor. This paper compared that FEM analysis and LI test of installed shield model and shieldless model.

• Journal of the Optical Society of Korea
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• 제4권2호
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• pp.75-78
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• 2000

We design a high temperature oven for measuring the saturation intensity of the transition line $4f^ 6/6s^{2 7}7F_0 ↔ 4f^6/6s6p $^1$P(J = 1)$ of the samarium atom. We first constructed a high temperature oven to generate the samarium vapor column and study the thermal characteristics of the oven. The oven is able to operate at a temperature up to about 1400 $^{\circ}C$ and the operation is tested by using several metals with high melting points. We describe two wave mixing experiment with the samarium vapor generated in the high temperature oven and obtain the saturation intensity by analyzing the first diffraction signal.

• 에너지공학
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• 제7권1호
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• pp.44-56
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• 1998

분리형 히트파이프식 열교환기는 증발기와 응축기를 폐열원과 열풍이 필요한 곳에 분리설치하고 증기 및 액체의 연락관으로 두 열교환기를 연결하여 하나의 폐루프를 구성하고 증발기와 응축기의 설치 높이차에 의해 작동이 이루어지는 것이다. 따라서 고온 및 저온유체의 병류 및 향류의 혼합배치가 용이하다는 장점이 있으나, 고온유체의 온도가 높을 경우에는 포화증기의 압력이 높아져 파이프가 견딜 수 있는 사용한계를 초과하게 될 수 있다. 또한 너무 낮으면 증기의 비체적증가와 함께 유속의 증가로 압력손실이 커져 설치높이차를 크게 하던지 증기연락관의 직경을 크게 하여야 하는 문제가 발생할 수 있다. 따라서 설계과정에서 고온유체 및 저온유체의 온도, 유량 등이 정하여진 상태에서 병류 및 향류로 배치하는 경우에 분리형 히트파이프식 열교환기를 Lmtd방법으로 설계하고, 고온 및 저온유체의 온도 및 유량이 실제 운전과정에서 변화가능한 범위에 대해 Ntu 방법으로 열교환량,포화증기압력 및 압력손실에 따른 증발기와 응축기의 설치높이차 등에 대한 가동특성을 고찰하였다.

• Journal of Photoscience
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• 제7권1호
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• pp.27-30
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• 2000

The Photoluminescence (PL) measurement results of a very good quality GaN sample grown by metalorganic chemical vapor deposition (MOCVD) are reported. The temperature dependences of peak position, emission intensity, and the full width at half maximum (FWHM) of free-exciton (FX) A and B are presented. Our results show the fast thermal quenching of FX transition intensities and predominantly acoustic phonon scattering of emission line broadening. The transition-energy-shift following the Varshni's empirical equation, and by using it to fit the data, E$\_$A1/(T) = 3.4861 eV -6.046 $\times$ 10$\^$-4/T$^2$ (620.3+ T) eV, E$\_$B1/(T) = 3.4928 eV -4.777 $\times$ 10$\^$-4/T$^2$ / (408.2+ T) eV and E$\_$A2/ = 3.4991 eV -4.426 $\times$ 10$\^$-4/ T$^2$ / (430.6+ T) eV for A(n=1), B(n=1), and A(n=2) are obtained respectively.

• Journal of Advanced Marine Engineering and Technology
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• 제11권1호
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• pp.72-79
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• 1987

When the wall temperature is very high, a stable vapor film covers the heat transfer surface. The vapor film creates a strong thermal resistance when heat is transferred to the liquid though it. This phenomenon, called "film boiling" is very important in the heat treatment of metals, the design of cryogenic heat exchangers, and the emergency cooling of nuclear reactors. In the practical engineering problems of the transient cooling process of a high temperature wall, the wall temperature history, the variation of the heat transfer coefficients, and the wall superheat at the rewetting points, are the main areas of concern. These three areas are influenced in a complex fashion such factors as the initial wall temperature, the physical properties of both the wall and the coolant, the fluid temperature, and the flow state. Therefore many kinds of specialized experiments are necessary in the creation of precise thermal design. The object of this study is to investigate the heat transfer characteristics in the transient cooling process of a high temperature wall. The slow transient cooling experiment was carried out with a copper block of high thermal capacity. The block was 240 mm high and 79 mm O.D.. The coolant flowed throuogh the center of a 10 mm diameter channel in the copper block. In the copper block, three sheathed thermocouples were placed in a line perpendicular to the flow. These thermocouples were used to take measurements of the temperature histories of the copper block.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.370-370
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• 2012

Feature size of Cu interconnects keep shrinking into several tens of nanometer level. For this reason, the Cu interconnects face challenging issues such as increase of electro-migration, line-width dependent electrical resistivity increase, and gap-filling difficulty in high aspect ratio structures. As the thickness of the Cu film decreases below 30 nm, the electrical resistivity is not any more constant, but rather exponential. Research on alloying with other elements have been started to inhibit such escalation in the electrical resistivity. A faint trace of Al added in Cu film by sputtering was reported to contribute to suppression of the increase of the electrical resistivity. From an industrial point of view, we introduced cyclic metal organic chemical vapor deposition (MOCVD) in order to control Al concentration in the Cu film more easily by controlling the delivery time ratio of Cu and Al precursors. The amount of alloying element could be lowered at level of below 1 at%. Process of the alloy formation was applied into gap-filling to evaluate the performance of the gap-filling. Voidless gap-filling even into high aspect ratio trenches was achieved. In-depth analysis will be discussed in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• 한국표면공학회지
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• 제47권6호
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• pp.347-353
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• 2014

We present a synthesis of single-walled carbon nanotubes(SWNTs) for enhancement of parallel-alignment and density using chemical vapor deposition with methane feed gas. As-purchased ST-cut quartz substrates were heat-treated and line-patterned by electron-beam lithography in order to grow SWNTs with parallel alignment. We investigated the effects of various synthesis parameters such as catalyst oxidation, reduction, and synthesis conditions in order to enhance both tube density and degree of parallel alignment. The condition of $1{\AA}$ of Fe catalyst film, atmospheric oxidation at $750^{\circ}C$ for 10 min, reduction under 400 Torr for 5 min, and growth at $865^{\circ}C$ under 300 Torr yields $33tubes/10{\mu}m$, which is the highest tube density with parallel alignment. Based on the results of atomic force microscope and Raman spectroscopy, it was found that SWNTs have diameter range of 0.8-2.0 nm. We believe that the present work would contribute to the development of SWNTs-based flexible functional devices.

• 설비공학논문집
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• 제5권2호
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• pp.141-155
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• 1993

Thermodynamic properties of R-32 are calculated and its refrigeration performance is evaluated for the purpose the feasibility study of replacing R-22 with R-32. (1) Refrigeration effect of R-32 is superior to that of R-22 because heat of evaporation of R 32 is about 50% higher than that of R-22. However, COP of R-32 system is 10-30% lower than that of R-22 system. It is mainly attributed to the vapor pressore of R-32 being about 62% higher than R-22. (2) Since the pressure ratio and the specific heat ratio of R-32 system is higher than those of R -22, compressor discharging temperature rises as high as to $130-150^{\circ}C$. It may cause mechanical failure of compressor due to the breakdown of lubricant. Compressor should be improved to lower the temperature if R-32 is to replace R-22. (3) Averaged two-phase heat transfer coefficient of R-32 is about 10-20% higher than that of R-22. It may assume better heat exchanger effectiveness but not guarantee the better COP of R-32 system than R-22. (4) The high vapor pressure is the first reason to drop R-32 out of the line of R-22 alternative refrigerant. So, refrigerant mixtures based on R-32 are recommended to adjust the vapor pressure first and keep superior volumetric capacity of R-32.