• Title/Summary/Keyword: Vapor growth

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Mass production of carbon nanotubes using Vapor Phase Growth (기상합성법을 이용한 탄소나노튜브의 대량합성)

  • 류승철;이태재;이철진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.123-126
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    • 2001
  • Multiwalled carbon nanotubes were massively produced by the catalytic reaction of C$_2$H$_2$ - Fe(CO)$\sub$5/ mixture at 750 - 950$^{\circ}C$ in a quartz tube reactor and over quartz substrates. Well-aligned MWNT array grows perpendicular to the quartz tube reactor and the quartz substrates at an average of 60 nm in diameter and up to several thousands of micrometers in length. This method does not require any pretreatment of substrates and CNTs are grown at atmospheric pressure. It could be suitable for mass production of multiwalled nanotubes. Scanning electron microscope and transmission electron microscope images of the nanotubes deposited on the substrates allowed us to monitor the quality of MWNTs grown under different operating conditions.

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Overlook of current chemical vapor deposition-grown large single-crystal graphene domains

  • Park, Kyung Tae;Kim, Taehoon;Park, Chong Rae
    • Carbon letters
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    • v.15 no.3
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    • pp.151-161
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    • 2014
  • Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.

Experimental Study of the Growth of the SiC Rod using LCVD (LCVD를 이용한 SiC 로드 성장에 관한 실험적 연구)

  • Ryu, Jae-Eun;Lee, Byeong-Ro;Lee, Young-Lim
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.1615-1620
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    • 2003
  • The purpose of the study is not only to establish experimental system for laser chemical vapor deposition but also to find the characteristics of SiC rod growth that is the beginning step in developing technology of 3 dimensional prototyping with laser chemical vapor deposition. In this study, SiC rod was generated with varying TMS pressure for 5 minutes. Deposition rates with varying TMS pressure, shapes of rods, surface roughness and component organization were investigated, in particular.

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Synthesis of Mullite Whiskers by Vapor-Solid Reaction in the System of Al(OH)3-SiO2-AlF3 (Al(OH)3-SiO2-AlF3계에서 기상-고상반응에 의한 뮬라이트 휘스커 합성)

  • Lee, Hong-Lim;Kang, Jong-Bong
    • Journal of the Korean Ceramic Society
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    • v.43 no.6 s.289
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    • pp.376-382
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    • 2006
  • In the $Al(OH)_3-SiO_2-AlF_3$ system, leaf-shaped fluorotopaz was first formed at $800^{\circ}C$ and mullite whisker was formed at $1,100^{\circ}C$. The mass transportation of Al and Si as gas phase, the fast reaction and growth, and the absence of liquid phase existence in mullite whisker showed that the formation and growth of mullite was from the solid-vapor reaction.

Characterization of Low-Temperature Graphene Growth with Plasma Enhanced Chemical Vapor Deposition

  • Ma, Yifei;Kim, Dae-Kyoung;Xin, Guoqing;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.421-421
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    • 2012
  • Graphene has drawn enormous attention owing to its outstanding properties, such as high charge mobility, excellent transparence and mechanical property. Synthesis of Graphene by chemical vapor deposition (CVD) is an attractive way to produce large-scale Graphene on various substrates. However the fatal limitation of CVD process is high temperature requirement(around $1,000^{\circ}C$), at which many substrates such as Al substrate cannot endure. Therefore, we propose plasma enhanced CVD (PECVD) and decrease the temperature to $400^{\circ}C$. Fig. 1 shows the typical structure of RF-PECVD instrument. The quality of Graphene is affected by several variables. Such as plasma power, distance between substrate and electronic coil, flow rate of source gas and growth time. In this study, we investigate the influence of these factors on Graphene synthesis in vacuum condition. And the results were checked by Raman spectra and conductivity measurement.

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Morphology Control of Single Crystalline Rutile TiO2 Nanowires

  • Park, Yi-Seul;Lee, Jin-Seok
    • Bulletin of the Korean Chemical Society
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    • v.32 no.10
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    • pp.3571-3574
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    • 2011
  • Nano-scaled metal oxides have been attractive materials for sensors, photocatalysis, and dye-sensitization for solar cells. We report the controlled synthesis and characterization of single crystalline $TiO_2$ nanowires via a catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanism during TiO powder evaporation. Scanning electron microscope (SEM) and transmission electron microscope (TEM) studies show that as grown $TiO_2$ materials are one-dimensional (1D) nano-structures with a single crystalline rutile phase. Also, energy-dispersive X-ray (EDX) spectroscopy indicates the presence of both Ti and O with a Ti/O atomic ratio of 1 to 2. Various morphologies of single crystalline $TiO_2$ nano-structures are realized by controlling the growth temperature and flow rate of carrier gas. Large amount of reactant evaporated at high temperature and high flow rate is crucial to the morphology change of $TiO_2$ nanowire.

Selective Growth of Nanosphere Assisted Vertical Zinc Oxide Nanowires with Hydrothermal Method

  • Lee, Jin-Su;Nam, Sang-Hun;Yu, Jung-Hun;Yun, Sang-Ho;Boo, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.252.2-252.2
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    • 2013
  • ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

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Growth Characteristics of Micro Carbon Structures Fabricated by Laser-Assisted Chemical Vapor Deposition (레이저 국소증착법에 의한 탄소 미세 구조물의 제조시 성장특성에 관한 연구)

  • Kim, Jin-Beom;Lee, Seon-Gyu;Lee, Jong-Hyeon;Jeong, Seong-Ho
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.7
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    • pp.106-115
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    • 2002
  • Growth characteristics of micro carbon structures fabricated by laser-assisted chemical vapor deposition are studied. Argon ion laser and ethylene were used as the energy source and reaction gas, respectively, to grow micro carbon rod through pyrolytic decomposition of the reaction gas. Experiments were performed at various conditions to investigate the influence of process parameters on growth characteristics such as the diameter or growth rate of the micro carbon rod with respect to reaction gas pressure and incident laser power. Reaction gas pressure in experiments ranges from 200 to 600Torr and the incident laser power from 0.3 to 3.8W. For these conditions, the diameter of the rod increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below IW. For a constant reaction gas pressure, the growth rate increase with Increasing laser power, but the rate of increase decreases gradually, implying that the chemical vapor deposition condition changes from a kinetically-limited regime to a mass-transport-limited regime. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 287${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated..

Dislocation behavior in the ZnSe crystal (ZnSe 단결정내에서의 전위거동)

  • 이성국;박성수;김준홍;한재용;이상학
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.560-566
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    • 1997
  • Dislocation behavior in the ZnSe crystal grown by seeded vapor transport was investigated. Etch pit shape with the ZnSe plane and dislocation arrangement were shown. Also the variation of the dislocation density in the crystal was disclosed. The dislocation density along the lateral growth direction was not changed but the dislocation density along the vertical growth direction was reduced as the crystal grew. The average dislocation density of the grown crystal was $4{\times}10^4 /\textrm{cm}^2$.

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Growth of $SiO_2$ nanowire by VS method. (기상증착방법에 의한 이산화규소 나노와이어의 성장)

  • 노대호;김재수;변동진;진정근;김나리;양재웅
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.115-115
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    • 2003
  • Silica nanostructures have been attached considerable attention because of theirs potential application in mesoscopic research and the potential use of large surface area structure of catalysts. SiO2 nannowire and nanorods was synthesized various methods including thermal evaporation, chemical vapor deposition (CVD), and laser ablation methods. In this experiments, SiO2 nanowire were grown using thermal evaporation method followed by VS (Vapor-Solid) growth mechanisms. Grown SiO2 nanowires were amorphous phases because of its low growth temperatures. Grown nanowires diameters were about 20-40nm at all growth conditions, but its microstructres were different by that used substrate because of it's oxygen contents.

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