• Journal of Industrial Technology
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• v.39 no.1
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• pp.7-14
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• 2019

Carbon nanotubes (CNT) on metal substrates are definitely beneficial because they can maintain robust mechanical stability and high conductivity between CNT and metal interfaces. Here, we report direct growth of CNT on Ni-based superalloy, Inconel 600, using thermal chemical vapor deposition (CVD) with acetylene feedstock in the growth temperature range of $400-725^{\circ}C$. Furthermore, we studied the effect of substrate pretreatment on the growth yield enhancement and growth temperature decrease of CNT on Inconel 600. Activation energy (AE) for CNT growth was estimated from the CNT height change with respect to the growth temperature. The AE values significantly decreased from 205.03 to 24.35 kJ/mol by the pretreatment of thermal oxidation of Inconel substrate at $725^{\circ}C$ under ambient. Higher oxidation temperature tends to have lower activation energy. The results have shown the importance of pretreatment temperature on CNT growth yield and growth temperature decrease.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.1-8
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• 2017

Catalytic synthesis and properties of ${\beta}-Ga_2O_3$ nanowires grown by metal organic chemical vapor deposition are reported. Au, Ni and Cu catalysts were suitable for the growth of $Ga_2O_3$ nanowires under our experimental conditions. The $Ga_2O_3$ nanowires grown by using Au, Ni and Cu catalysts showed different growth rates and morphologies in each case. We found the $Ga_2O_3$ nanowires were grown by the Vapor-Solid (VS) process when Ni was used as a catalyst while the Vapor-Liquid-Solid (VLS) was a dominant process in case of Au and Cu catalysts. Also, we found nanowires showed different optical properties depend on catalytic metals. On the other hand, for the cases of Ti, Sn and Ag catalysts, nanowires could not be obtained under the same condition of Au, Cu and Ni catalytic synthesis. We found that these results are related to the different characteristics of each catalyst, such as, melting points and phase diagrams with gallium metal.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.149-156
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• 1998

In this work, aiming at improvement of growth processes for the bulk GaAs single crystals, efforts have been made first in investigate thermodynamic properties of the Ga and As system and second to suggest that bulk GaAs crystals could be grown in principle with the single temperature zone only by determining the excess arsenic charge as a function of growth conditions. During crystal growth, this will be evaporized inside the growth chamber to induce the required inner pressure, instead of aesenic vapor pressure in the double temperature zone method, so as to be in equilibrium with the method, growth experiments have been prepared and carried out for dopes and undoped GaAs crystals with the newly built Bridgman system which was designed according to this principle. To compare the results to those of the double temperature zone method, the same numbers of GaAs crystals have been grown with both processes and all of them were characterized in single crystallinity, lattice defects and electrical properties. Especially, the relationship between growth conditions and crystal quality was discussed from the viewpoint of growth peculiarities with this method.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.39-43
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• 1997

Mercurous chloride (Hg$_2$Cl$_2$) has many advantages in its applications to acousto-optic, and opto-electronic devices because it has the unique properties of a broad transmisson range, well into the far infra-red, a low acoustic velocity, a large birefringence, and a high acousto-optic figure of merit[1]. Hg$_2$Cl$_2$ has a high vapor pressure, hence single crystals are usually grown by physical vapor transport(PVT) method in closed silica glass ampoules. We discuss the application of the laser Doppler velocimetry to measure the flow field inside a closed ampoule. The experimental results, are discussed its relationship to computational model and compared to their expectations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.18-22
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• 2007

Carbon nanofilaments were deposited on silicon oxide substrate by thermal chemical vapor deposition method. We used $Fe(CO)_5$ as the catalyst for the carbon nanofilaments formation. Around $800^{\circ}C$ substrate temperature, the formation density of carbon nanofilaments could be enhanced by the vacuum sublimation technique of $Fe(CO)_5$, compared with the conventional spin coating technique. Finally, we could achieve the low temperature, as low as $350^{\circ}C$, formation of carbon nanofilaments using the sublimated Fe-complex nanograins with thermal chemical vapor deposition. Detailed morphologies and characteristics of the carbon nanofilaments were investigated. Based on these results, the role of the vacuum sublimation technique for the low temperature deposition of carbon nanofilaments was discussed.

• Journal of the Korean Society for Heat Treatment
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• v.28 no.1
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• pp.7-16
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• 2015

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.239.2-239.2
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• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.119-123
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• 2011

Carbon nanotilaments (CNFs) could be synthesized on nickel catalyst layer-deposited silicon oxide substrate using $C_2H_2$ and$H_2$ as source gases under thermal chemical vapor deposition system. By the incorporation of $SF_6$ as a cyclic modulation manner, the geometries of carbon coils-related materials, such as nano-sized coil and wave-like nano-sized coil could be observed on the substrate. The characteristics (formation density and morphology) of as-grown CNFs with or without $SF_6$ incorporation were investigated. Diameter size reduction for the individual CNFs-related shape and the enhancement of the formation density of CNFs-related material could be achieved by the incorporation of $SF_6$ as a cyclic modulation manner. The cause for these results was discussed in association with the slightly increased etching ability by $SF_6$ addition and the sulfur role in SF 6 for the geometry change.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1236-1239
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• 2005

Aligned carbon nanotubes(CNTs) array were synthesized using DC plasma-enhanced chemical vapor deposition. Silicon substrate Ni-coated of 5nm thickness were pretreated by $NH_3$ gas with a flow rate of 180sccm, for 10min. CNTs were grown on the pretreated substrates at $30%\;C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters from 60 to 80 nanometers and lengths about 2.7 micrometers were obtained. Vertical alignment of carbon nanotubes were observed by FESEM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.123-126
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• 2001

Multiwalled carbon nanotubes were massively produced by the catalytic reaction of C$_2$H$_2$ - Fe(CO)$\sub$5/ mixture at 750 - 950$^{\circ}C$ in a quartz tube reactor and over quartz substrates. Well-aligned MWNT array grows perpendicular to the quartz tube reactor and the quartz substrates at an average of 60 nm in diameter and up to several thousands of micrometers in length. This method does not require any pretreatment of substrates and CNTs are grown at atmospheric pressure. It could be suitable for mass production of multiwalled nanotubes. Scanning electron microscope and transmission electron microscope images of the nanotubes deposited on the substrates allowed us to monitor the quality of MWNTs grown under different operating conditions.