• 한국결정성장학회지
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• 제12권4호
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• pp.215-221
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• 2002

$SiH_2Cl_2/H_2$ 기체혼합물을 원료로 사용하여 (100) Si 기판 위에 고온벽 화학기상증착법(hot-wall CVD)으로 에피 실리콘을 증착시켰다. 공정변수(증착온도, 반응기 압력, 입력 기체의 조성비($H_2/SiH_2Cl_2$)등)가 실리콘 증착에 미치는 영향을 조사하기 위해 열화학적 전산모사를 수행하였으며, 전산모사를 통해 얻은 공정조건의 범위를 바탕으로 실험한 결과, 전산모사의 결과와 실험이 잘 일치함을 알 수 있었다. 실험을 통해 얻은 최적 증착 조건은 증착온도가 850~$950^{\circ}C$, 반응기 압력은 2~5 Torr, $H_2/SiH_2Cl_2$비는 30~70 정도임을 알 수 있었고, 증착된 에피 실피콘은 두께 및 비저항의 균일도가 우수하고 불순물 함량이 낮은 양질의 박막임을 확인할 수 있었다.

• 한국결정성장학회지
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• 제19권1호
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• pp.39-47
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• 2009

The effects of thermo-solutal convection on mercurous chloride system of ${Hg_2}{Cl_2}$, and Ne during physical vapor transport are numerically investigated for further understanding and insight into essence of transport phenomena, For $10\;K{\le}{\Delta}T{\le}30\;K$, the growth rate slowly increases and, then is decreased gradually until ${\Delta}T$=50 K, The occurrence of this critical point near at ${\Delta}T$=30 K is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. For the range of $10\;Torr{\le}P_B{\le}300\;Torr$, the rate is second order-exponentially decayed with partial pressures of component B, $P_B$. For the range of $5{\le}M_B{\le}200$, the rate is second order-exponentially decayed with a function of molecular weight of component B, $M_B$. Like the case of a partial pressure of component B, the effects of a molecular weight arc: reflected through the binary diffusivity coefficients, which are intimately related with suppressing the convection flow inside the growth enclosure, i,e., transition from convection to diffusion-dominant flow mode as the molecular weight of B increases. The convective mode is near at a ground level, i,e., on earth (1 $g_0$), and the convection is switched to the diffusion mode for $0.1\;g_0{\le}g{\le}10^{-2}g_0$, whereas the diffusion region ranges from $10^{-2}g_0$ up to $10^{-5}g_0$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Carbon letters
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• 제13권4호
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• pp.205-211
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• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

• 대한기계학회논문집B
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• 제23권5호
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• pp.670-677
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• 1999

An analysis of generation and growth of multicomponent particles has been carried out to predict the size and composition distributions of particles generated in the Modified Chemical Vapor Deposition(MCVD) process. In MCVD process. scale-up of sintering and micro-control of refractive index may need the Information about the size and composition distributions of $SiO_2-GeO_2$ particles that are generated and deposited. The present work solved coupled steady equations (axi-symmetric two dimensions) for mass conservation, momentum balance. energy and species(such as $SiCl_4$, $GeCl_4$, $O_2$, $Cl_2$) conservations describing fluid flow. heat and mass transfer in a tube. Sectional method has been applied to obtain multi-modal distributions of multicomponent aerosols which vary in both radial and axial directions. Chemical reactions of $SiCl_4$ and $GeCl_4$ were included and the effects of variable properties have also been considered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.415-415
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• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Advances in nano research
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• 제3권2호
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• pp.81-96
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• 2015

Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.1-6
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• 2010

Star-like ZnO nanostructures were grown on SI(100) substrates with carbon(C) catalyst by employing vapor-solid(VS) mechanism. The morphologies and structure of ZnO nanostructures were investigated by Field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and Raman spectrum, Photoluminescence spectrum. The results demonstrated that the as-synthesized products consisted of star-like ZnO nanostructure with hexagonal wurtzite phase. Nanostructures grown at 1100 were mainly star-like in structure with diameters of 500 nm. The legs of the star-like nanostructures were preferentially grown up along the [0001] direction. A vapor.solid (VS) growth mechanism was proposed to explain the formation of the star-like structures. Photoluminescence spectrum exhibited a narrow emission band peak around 380 nm and a broad one around 491 nm. Raman spectrum of the ZnO nanostructures showed oxygen defects in ZnO nanostructures due to the existence of Ar gas during the growth process, leading to the dominant green band peak in the PL spectrum.

• 한국결정성장학회지
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• 제31권3호
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• pp.127-136
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• 2021

This paper is dedicated to numerical simulation for diffusion-advective convection in a square cavity during physical vapor transport of Hg₂Br₂. Flow characteristics of the temperature difference between the source and crystal regions, 50℃ (300℃ → 250℃), partial pressures of component argon of 20 Torr and 100 Torr are investigated and presented as velocity vectors and streamlines, isotherms and iso-mass concentrations contours. Moreover, alterations of average Nusselt and average Sherwood numbers with (a) the source and crystal regions, (b) the pressures of component argon of 20 Torr and 100 Torr are analyzed and addressed in details. Both average Nusselt and average Sherwood numbers are seen to decrease with the increasing values of the partial pressures of component argon. Also, it is found that for the two different partial pressures of component argon, average Nusselt numbers at the source region are greater than at the crystal region, and inversely, average Sherwood numbers at the crystal region are greater than the source region by a factor of 3.