• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.418-418
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• 2009

Vertically aligned arrays of multi-walled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). We studied changes in growth by parameters of growth temperature, growth time, rates of gas and annealing time of catalyst. Also, We grew CNTs by adding a little amount of water vapor to enhance the growth of CNTs. $H_2$, Ar, and $C_2H_2$ were used as carrier gas and feedstock, respectively. Before growth, Fe served as catalyst, underneath which AI were coated as an underlayer and a diffusion barrier, respectively, on the Si substrate. The water vapor had a greater effect on the growth of CNTs on a smaller thickness of catalyst. When the water vapor was introduced, the growth of CNTs was enhanced than without water. CNTs grew 1.29 mm for 10 min long by adding the water vapor, while CNTs were 0.73 mm long without water vapor for the same period of time. CNTs grew up to 1.97 mm for 30 min prior to growth termination under adding water vapor. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy.

• 한국결정성장학회지
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• 제13권4호
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• pp.187-198
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• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.381-381
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• 2011

The influence of the water vapor on the growth of single-walled carbon nanotubes (SWCNTs) was investigated. SWCNTs were synthesized by catalytic chemical vapor deposition of acetylene over Fe-Mo/MgO catalyst with injection of water vapor. The morphologies and structures of the water-assisted SWCNTs were investigated according to the growth conditions such as water vapor concentrations, flow rate of the gas, furnace temperature, and growth time. Water-assisted SWCNTs exhibited large bundle morphological features with well-alignment of each CNT, while SWCNTs synthesized in the absence of water vapor showed entangled CNT with the random orientation. We also found that the diameter of the SWCNT bundle could be controlled by the growth condition. In our optimal growth condition, the product yield and the purity were 300 wt. % and 75%, which were 7.5 and 2.5 times higher than those of SWCNTs synthesized without water vapor, respectively. More detail discussion will be offered at the poster presentation.

• 한국결정성장학회지
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• 제26권4호
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• pp.135-138
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• 2016

AlN 결정을 PVT(물리 기상 이동법, Physical Vapor Transport) 법으로 성장함에 있어 결정립의 성장 거동을 관찰하였다. 작은 AlN 결정립이 성장한 이후 결정립들은 이웃한 결정립과 합쳐지면서 성장하는 거동을 보였다. 이를 실체현미경을 이용하여 관찰한 결과를 보고하고자 한다.

• 한국입자에어로졸학회지
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• 제9권3호
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• pp.163-171
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• 2013

Soot particles emitted from combustion processes are often coated by non-absorbing organic materials, which enhance the global warming effect of soot particles. It is of importance to study the condensation characteristics of soot particles experimentally and theoretically to reduce the uncertainty of the climate impact of soot particles. In this study, the condensational growth of soot particles in a tubular coater was modeled by a one-dimensional (1D) plug flow model and a two-dimensional (2D) laminar flow model. The effects of 2D heat and mass transports on the predicted particle growth were investigated. The temperature and coating material vapor concentration distributions in radial direction, which the 1D model could not accounted for, affected substantially the particle growth in the coater. Under the simulated conditions, the differences between the temperatures and vapor concentrations near the wall and at the tube center were large. The neglect of these variations by the 1D model resulted in a large error in modeling the mass transfer and aerosol dynamics occurring in the coater. The 1D model predicted the average temperature and vapor concentration quite accurately but overestimated the average diameter of the growing particles considerably. At the outermost grid, at which condensation begins earliest due to the lowest temperature and saturation vapor concentration, condensing vapor was exhausted rapidly because of the competition between condensations on the wall and on the particle surface, decreasing the growth rate. At the center of the tube, on the other hand, the growth rate was low due to high temperature and saturation vapor concentration. The effects of Brownian diffusion and thermophoresis were not high enough to transport the coating material vapor quickly from the tube center to the wall. The 1D model based on perfect radial mixing could not take into account this phenomenon, resulting in a much higher growth rate than what the 2D model predicted. The result of this study indicates that contrary to a previous report for a thermodenuder, 2D heat and mass transports must be taken into account to model accurately the condensational particle growth in a coater.

• 한국대기환경학회지
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• 제20권2호
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• pp.161-174
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• 2004

Aerosol formation and growth by water vapor reactions were investigated in a 2.5 -㎥ indoor smog chamber filled with the unfiltered ambient air. The relative humidity of test ambient air was elevated at 59～64% or 84～88% by adding water vapor. The aerosol number size distribution and the concentrations of $O_3$, NO, NO$_2$, and SO$_2$ were measured during the experiments. The $O_3$ and NO$_2$ gases were well reacted with the water vapor at high relative humidity of 84～88%, and the reaction rates of these gases seemed to be decreased at low relative humidity of 59～64%. The formation and condensational growth phenomena of ambient aerosols by water vapor reactions were observed in a Teflon bag, depending strongly on the initial particle size distribution. The water vapor reactions might be affected by the contents of oxidants produced by photochemical reactions under sunlight.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.262-267
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• 2015

We demonstrate the growth of single-walled carbon nanotubes (SWNTs) using ethylene-based chemical vapor deposition (CVD) and ferritin-induced catalytic particles toward growth temperature reduction. We first optimized the gas composition of $H_2$ and $C_2H_4$ at 500 and 30 sccm, respectively. On a planar $SiO_2$ substrate, high density SWNTs were grown at a minimum temperature of $760^{\circ}C$. In the case of growth using nanoporous templates, many suspended SWNTs were also observed from the samples grown at $760^{\circ}C$; low values of $I_D/I_G$ in the Raman spectra were also obtained. This means that the temperature of $760^{\circ}C$ is sufficient for SWNT growth in ethylene-based CVD and that ethylene is more effective that methane for low temperature growth. Our results provide a recipe for low temperature growth of SWNT; such growth is crucial for SWNT-based applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.26-26
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• 2009

Vertically aligned arrays of mm-long multi-walled carbon nanotubes (MWCNTs) on Si substrates have been synthesized by water-assisted thermal chemical vapor deposition (CVD). The growth of CNTs was investigated by changing the experimental parameters such as growth temperature, growth time, gas composition, annealing time, catalyst thickness, and Al underlayer thickness. The 0.5-nm-thick Fe served as catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. We grew CNTs by adding a little amount of water vapor to enhance the activity and the lifetime of the catalyst. Al was very good at producing the nm-size catalyst particles by preventing "Ostwald ripening". The Al underlayer was varied over the range of 15~40 nm in thickness. The optimum conditions for the synthesis parameters were as follows: pressure of 95 torr, growth temperature of $815^{\circ}C$, growth for 30 min, 60 sccm Ar + 60 sccm $H_2$ + 20 sccm $C_2H_2$. The water vapor also had a great effect on the growth of CNTs. CNTs grew 5.03 mm long for 30 min with the water vapor added while CNTs were 1.73 mm long without water vapor at the same condition. As-grown CNTs were characterized by using scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and Raman spectroscopy. High-resolution transmission electron microscopy showed that the as-grown CNTs were of ~3 graphitic walls and ~6.6 nm in diameter.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.328.2-328.2
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• 2014

Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.21.1-21.1
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• 2011

Vertically aligned single-crystal ZnO nanowires have been successfully grown on c-plane sapphire substrate using chemical vapor deposition (CVD) without catalyst. According to growth temperatures, it was changed ZnO growth characteristic. We investigated the effect of substrate temperatures on the growth ZnO films or nanowires on c-plane (0001) sapphire substrates. The ZnO films were acquired at $500^{\circ}C$, whereas the ZnO nanowires were obtained at $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$. The growth behavior diameter and growth rate of ZnO were changed due to different temperature. As a result of analyzing in-plane residual stress by X-ray diffraction, the optimized condition of ZnO nanowires were at $600^{\circ}C$.