• Journal of the Korean Wood Science and Technology
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• v.38 no.1
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• pp.56-65
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• 2010

The purpose of this study was finding out proper wall assembly to reduce moisture accumulation in light frame wall under outdoor air conditions. For the purpose, moisture transfer and accumulation in a wall were evaluated for five types of wall assembly; typical wall (T), addition of a vapor retarder (P1), addition of two vapor retarders (P2), addition of an open air gap for ventilation behind the siding (P3), and shift of vapor retarder with proposed wall 'P3' (P4). The moisture transfer and accumulation in the all walls were evaluated after applying the typical and proposed walls to the field test house. Performances of the typical and proposed walls were compared according to the season. Rank for effective wall on reducing moisture accumulation in wall was 1) shift of vapor ratarder and addition of open air gap (P4), 2) addition of vapor retarder (P1), 3) typical wall (T), 4) addition of open air gap (P3), and 5) the other (P2).

• Journal of ILASS-Korea
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• v.28 no.3
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• pp.113-118
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• 2023

This study investigates the evaporation characteristics of paired sessile droplets on a heated substrate. In particular, the evaporation time and contact line behaviors were analyzed based on the droplet-to-droplet distance and substrate temperature. The contact line behavior and volume variations were visualized using the shadowgraph method. It was observed that the contact diameter and contact angle exhibited similar behavior for both single and paired droplets regardless of the droplet-to-droplet distance and substrate temperature. The paired droplets demonstrated a longer evaporation time than the single droplet due to the vapor accumulation between the droplets. Furthermore, the scaled lifetime, defined as the ratio of evaporation time between paired and single droplets, increased as the droplet-to-droplet distance decreased and decreased as the substrate temperature increased, attributed natural convection.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1085-1088
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• Journal of the Korean Wood Science and Technology
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• v.37 no.4
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• pp.320-329
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• 2009

The purpose of this study was reducing the moisture accumulation in a wall, which can threaten the structural safety of light-frame wall and make residential environment poor. For the purpose, the laboratory test was carried out with different wall assemblies. Vapor retarder and air gap for ventilation were added to the typical wall. The improved performance of the proposed walls was examined through the test with distinct difference of temperature and relative humidity between outdoor and indoor air conditions. Increased dampproofing performance of additional vapor retarder was effective on reduction of moisture transmission from inside the house into the wall. However, unexpected high relative humidity was shown in the wall with two additional vapor retarder because of excessive dampproofing performance or inadequate location of vapor retarder. And, the open air gap induced the moisture transfer from inside the wall into outdoor air by ventilation. If the alternative to the induction of moisture transmission from inside the house into the wall with open air gap can be found, moisture reduction effect of that will be increased obviously.

• Journal of Korean Society for Atmospheric Environment
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• v.14 no.6
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• pp.599-606
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• 1998

Removal of toluene vapor from airstreams was studied in a biological reactor known as a biofilter. The biofilter was packed porous ceramic inoculated with thickened activated sludge (MLVSS 17,683 mg/L). The lab-scale biofilter was operated for 42 days under various experimental conditions including inlet toluene concentrations and flow rates of the contaminated air streams. Removal efficiency reached up 96.6% after 4 days from start up. Nutrient limitation was proposed as a reason for the decrease in biofilter performence. Biofilter performance decreased substantially, coincident with the buildup of back pressure due to accumulation of excess VSS within the medium bed. Practically, the bed needs to be backwashed when the overall pressure drop is greater than 460.6 Pa at SV (Space Velocity) 100 h-1. Periodic backwashing of the biofilter was necessary for removing excess biomass and attaining stable long -term high removal efficiency The removal efficiency of toluene in the biofilter decreased as the gas velocity and toluene concentration in the inlet gas increased. The maximum elimination capacity of ceramic biofilter could reach up to 444.85 g/m3. hr. When the loading of toluene exceed this critical value, substrate inhibition occurred.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1232-1236
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/oxidized PS/PS/P-Si/Al, where the p-Si is etched anisotropically to be prepared into a membrane-shape. We used alcohol gases vaporized from different alcohol (or ethanol) solutions mixed with pure water at 36$^{\circ}C$, similarly with an alcohol breath measurement to check drunk driving. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator-semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.465-471
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• 1998

Diamond-like carbon (DLC) films have been prepared by means of the plasma enhanced chemical vapor deposition (PECVD) method using vertical-capacitor electrodes. The deposition rata in our experiment is relatively small compared with that in the conventional PECVD methods, which implies that the accumulation of the neutral $CH_n$ radicals on the substrates due to the gravitational movement may not contribute to the deposition of DLC films. The hardness and the transparency were measured as a function of the ratio of the partial pressure of $CH_4-H_2$ mixtures or the hydrogen contents of specimens. The coefficients of friction between DLC films and a $Si_3N_4$ tip measured by using a lateral force microscope are in the range of 0.024 to 0.033 which depend on the hydrogen contents in DLC, and the surface roughness depends mainly on the deposition rate. The optical gaps increase with increasing the hydrogen contents. DCL films deposited on Pt-coated Si wafers show the stable emission characteristics, and the turn-on fields are in the range of 11 to 20 $V/\mu$m.

• Korean Journal of Environmental Agriculture
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• v.26 no.1
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• pp.69-76
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• 2007

The accumulation curves of phenol in the flesh of apples were measured at $5^{\circ}C$, $25^{\circ}C$ and $40^{\circ}C$ when they were exposed to phenol vapor, The effective diffusivities of phenol at the rind and flesh were determined by comparing its experimentally obtained accumulation curves with simulated ones. The simulation was carried out by the non-steady state diffusion rate equation. The diffusion model assumed the consecutive diffusion of phenol at the rind and flesh of apples. The detection time of phenol in the flesh of apples was shortened with increasing temperature, and it accumulated amount also increased rapidly. The estimated effective diffusivity of phenol at the rind of apples increased with temperature as like $1.1{\times}10^{-13}\;m^2/s$ at $5^{\circ}C$, $1.4{\times}10^{-13}\;m^2/s$ at $25^{\circ}C$ and $2.2{\times}10^{-13}\;m^2/s$ at $40^{\circ}C$, but those at the flesh of apples were invariant as $1.5{\times}10^{-10}\;m^2/s$ at this temperature range. The effect of temperature on the diffusivity of phenol was small, but the increase of the vapor pressure of phenol with temperature accelerated the penetration of phenol at the rind, resulting in the rapid accumulation at the flesh of apple.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.16-21
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• 2020

How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.