• Bulletin of the Korean Chemical Society
• /
• v.31 no.10
• /
• pp.2909-2912
• /
• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1763-1765
• /
• 2000

This paper presents deposition and characterizations of microcrystalline silicon ($\mu$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature at 300$^{\circ}C$. The flow rates of $SiH_4$ gas are critical parameter for the formation of Si films with microcrystalline phase. We could obtain $\mu$ c-Si:H with columnar grain structure and volume fraction of 75% without H2 dilution. The electronic properties, hydrogen bonding configurations, and $H_2$ concentration inside the films are also strongly affected by $SiH_4$ flow rate, which is provided in this paper.

• Corrosion Science and Technology
• /
• v.6 no.1
• /
• pp.18-23
• /
• 2007

DLC coatings have been deposited onto substrate of STS 316L and Ti alloy using r.f. PACVD (plasma-assisted chemical vapor deposition) with a mixture of $C_{6}H_{6}$ and $SiH_{4}$ as the process gases. Corrosion performance of DLC coatings was investigated by electrochemical techniques (potentiodynamic polarization test and electrochemical impedance spectroscopy) and surface analysis (scanning electron microscopy). The electrolyte used in this test was a 0.89% NaCl solution of pH 7.4 at temperature $37^{\circ}C$. The porosity and protective efficiency of DLC coatings were obtained using potentiodynamic polarization test. Moreover, the delamination area and volume fraction of water uptake of DLC coatings as a function of immersion time were calculated using electrochemical impedance spectroscopy. This study provides the reliable and quantitative data for assessment of the effect of substrate on corrosion performance of Si-DLC coatings. The results showed that Si-DLC coating on Ti alloy could improve corrosion resistance more than that on STS 316L in the simulated body fluid environment. This could be attributed to the formation of a dense and low-porosity coating, which impedes the penetration of water and ions.

• International Journal of Naval Architecture and Ocean Engineering
• /
• v.13 no.1
• /
• pp.794-803
• /
• 2021

The instantaneous acceleration affects the performance of the water-jet pump obviously. Here, based on the user-defined function, the method to simulate the inner flow in water-jet pumps under acceleration conditions was established. The effects of two different acceleration modes (linear acceleration and exponential acceleration) and three kinds of different acceleration time (0.5s, 1s and 2s) on the performance of the water-jet pump were analyzed. The results show that the thrust and the pressure pulsation under exponential acceleration are lower than that under linear acceleration at the same time; the vapor volume fraction in the impeller under linear acceleration is 27.3% higher than that under exponential acceleration. As the acceleration time increases, the thrust gradually increases and the pressure pulsation amplitude at the impeller inlet and outlet gradually decreases, while the law of pressure pulsation is the opposite at the diffuser outlet. The main frequency of pressure pulsation at the impeller outlet is different under different acceleration time. The research results can provide some reference for the optimal design of water-jet pumps.

• Korean Journal of Materials Research
• /
• v.23 no.7
• /
• pp.359-365
• /
• 2013

We investigated the nanostructural, chemical and optical properties of nc-Si:H films according to deposition conditions. Plasma enhanced chemical vapor deposition(PECVD) techniques were used to produce nc-Si:H thin films. The hydrogen dilution ratio in the precursors, [$SiH_4/H_2$], was fixed at 0.03; the substrate temperature was varied from room temperature to $600^{\circ}C$. By raising the substrates temperature up to $400^{\circ}C$, the nanocrystalite size was increased from ~2 to ~7 nm and the Si crystal volume fraction was varied from ~9 to ~45% to reach their maximum values. In high-resolution transmission electron microscopy(HRTEM) images, Si nanocrystallites were observed and the crystallite size appeared to correspond to the crystal size values obtained by X-ray diffraction(XRD) and Raman Spectroscopy. The intensity of high-resolution electron energy loss spectroscopy(EELS) peaks at ~99.9 eV(Si $L_{2,3}$ edge) was sensitively varied depending on the formation of Si nanocrystallites in the films. With increasing substrate temperatures, from room temperature to $600^{\circ}C$, the optical band gap of the nc-Si:H films was decreased from 2.4 to 1.9 eV, and the relative fraction of Si-H bonds in the films was increased from 19.9 to 32.9%. The variation in the nanostructural as well as chemical features of the films with substrate temperature appears to be well related to the results of the differential scanning calorimeter measurements, in which heat-absorption started at a substrate temperature of $180^{\circ}C$ and the maximum peak was observed at ${\sim}370^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.17 no.9
• /
• pp.2339-2358
• /
• 1993

Since the rate and completeness of combustion in direct injection engines were controlled by the characteristics of gas flow fields and sprays, an understanding of those was essential to the design of the direct injection engines. In this study the numerical simulations of injection pressure effects on the characteristics of gas flow fields and sprays were preformed using the spray model that could predict the interactions between gas fields and spray droplets. The governing equations were discretized by the finite volume method and the modified k-.epsilon. model which included the compressibility effects due to the compression/expansion of piston was used. The results of the numerical calculation of the spray characteristics in the quiescent environment were compared with the experimental data. There were good agreements between the results of calculation and the experimental data, except in the early stages of the spray. In the motoring condition, the results showed that a substantial air entrainment into the spray volume was emerged and hence the squish motion was relatively unimportant during the fuel injection periods. It was found that as the injection pressure increased, the evaporation rate of droplets was decreased due to the narrow width of spray and the increased number of droplets impinged on the bottom of the piston bowl.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.254-255
• /
• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Journal of Advanced Marine Engineering and Technology
• /
• v.36 no.2
• /
• pp.286-293
• /
• 2012

In this investigation, flow analysis with single phase has been performed for a centrifugal impeller with a design efficiency of 90%, head of 20m and rotational speed of 3500 rpm at a design flow rate of 16m3. The impeller was designed based on an empirical formula suggested by A.J. Stepanoff. In a case of the single phase analysis, the hydraulic efficiency and head is 88.8% and 19.4m, respectively, which showed a good agreement with the values designed. The flow analysis with two phases was carried out under the various NPSH, at whose 8.79m the cavitation on the suction side of the blade was observed. The required NPSH of the designed impeller is approximately 6.5m and above this value, the designed centrifugal pump impeller needs to be operated under inlet pressure condition.