• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.11
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• pp.1428-1436
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• 2000

The absorption of vapor involves simultaneous heat and mass transfer in the vapor/liquid system. In this paper, a numerical study for vapor absorption process into LIBr-H$_2$O solution film flowing over helical absorber has been carried out. Axisymmetric cylindrical coordinate system was adopted to model the helical tube and the transport equations were solved by the finite volume method. The effects of operating conditions, such as the cooling water temperature. the system pressure, the film Reynolds number and the solution inlet concentration have been investigated in view of the absorption mass flux and the total absorption mass flux and the total absorption rate. The results for the temperature and concentration profiles, as well as the local absorption mass flux at the helical absorber are presented. It is shown that solution inlet concentration affected other than operation conditions for a mass flux.

• Asian Journal of Atmospheric Environment
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• v.6 no.3
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• pp.222-233
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• 2012

The nocturnal low-level jet makes a significant impact on carbon and water exchanges and turbulent mixing processes in the atmospheric boundary layer. This study reports a case study of nocturnal surface fluxes such as $CO_2$ and water vapor in the surface layer observed at a flat and homogeneous site in the presence of low-level jets (LLJs). In particular, it documents the temporal evolution of the overlying jets and the coincident response of surface fluxes. The present study highlights several factors linking the evolution of low-level jets to surface fluxes: 1) wavelet analysis shows that turbulent fluxes have similar time scales with temporal scale of LLJ evolution; 2) turbulent mixing is enhanced during the transition period of low-level jets; and 3) $CO_2$, water vapor and heat show dissimilarity from momentum during the period. We also found that LLJ activity is related not only to turbulent motions but also to the divergence of mean flow. An examination of scalar profiles and turbulence data reveal that LLJs transport $CO_2$ and water vapor by advection in the stable boundary layer, suggesting that surface fluxes obtained from the micrometeorological method such as nocturnal boundary layer budget technique should carefully interpreted in the presence of LLJs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.7-7
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• 2009

Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as $3.5{\times}10^{19}\;cm^{-3}$. The Seebeck coefficient of an individual PbTe nanowire with a radius of 68 nm was measured to be $S=-72{\mu}V/K$ at room temperature, which is about three times that of bulk PbTe at the same carrier concentration. Our results suggest that PbTe nanowires can be used for high-efficiency thermoelectric devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.1
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• pp.1-5
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• 2015

For the special usage, the effort of developing AlN single crystals has been very hot in the world. The AlN-base UV LEDs are used on the field of sterilization, purification, curing and analyzing, which can advance human's living and medical processes etc.. AlN single crystals were grown by the PVT (Physical vapor transport) method. On the growing process, carbon crucibles with three different types such as normal size, taller than normal and wider than normal were used for comparison. The processing temperature was in the range of $1900{\sim}2100^{\circ}C$ and ambient pressure was 200~1 Torr. When the taller crucible was used, the sublimation mass was greater than normal dimension one but the best condition of growth changes widely. However the wider one gave much sublimation mass and growing condition was more stable than normal dimension. On limited growing furnace system, the changes of crucible dimension of PVT method provide the change of best condition for growth rate, as-grown crystal quality and growth condition stability.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.414-422
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• 1997

CdS thin films with low resistivity and adequate transmittance in the visible region for the window of CdS/CdTe hetero junction solar cel1 were prepared by close spaced vapor transport(CSVT) method. The electrical and optical properties of the CdS thin films were investigated in terms of the deposition conditions, such as the substrate temperature, the working pressure, and the source temperature. The substrate temperature, the working pressure, and the source temperature for the optimum deposition of the CdS thin films were $300^{\circ}C$, 100mTorr, and $730^{\circ}C$, respectively. The resistivity and the transmittance of the CdS thin films deposited under this condition were about $7.21{\times}10^{3}{\Omega}cm$ and over 65%, respectively. The crystallinity, the resistivity, and optical band gap were improved greatly compared to the CdS thin films deposited by general high vacuum evaporation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.85-85
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• 2010

Graphene, the building block of graphite, is one of the most promising materials due to their fascinating electronic transport properties. The pseudo-two-dimensional sp2 bonding in graphene layers yields one of the most effective solid lubricants. In this poster, we present the correlation between electrical and nanomechanical properties of graphene layer grown on Cu/Ni substrate with CVD (Chemical Vapor Deposition) method. The electrical (current and conductance) and nanomechanical (adhesion and friction) properties have been investigated by the combined apparatus of friction force microscopy/conductive probe atomic force microscopy (AFM). The experiment was carried out in a RHK AFM operating in ultrahigh vacuum using cantilevers with a conductive TiN coating. The current was measured as a function of the applied load between the AFM tip and the graphene layer. The contact area has been obtained with the continuum mechanical models. We will discuss the influence of mechanical deformation on the electrical transport mechanism on graphene layers.

• Progress in Superconductivity
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• v.9 no.1
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• pp.5-10
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• 2007

We prepared four different $MgB_2$ films on $Al_2O_3$ by hybrid physical chemical vapor deposition method with thicknesses ranging from $0.65\;{\mu}m$ to $1.2\;{\mu}m$. X-ray diffraction patterns confirm that all the $MgB_2$ films are c-axis oriented perpendicular to $Al_2O_3$ substrates. The superconducting onset temperature of $MgB_2$ films were between 39.39K and 40.72K. The residual resistivity ratio of the $MgB_2$ films was in the range between 3.13 and 37.3. We measured the angle dependence of critical current density ($J_c$) and resistivity, and determined the upper critical field ($H_{c2}$) from the temperature dependence of the resistivity curves. The anisotropy ratios defined as the ratio of the $H_{c2}$ parallel to the ab-plane to that perpendicular to the ab-plane were in the range of 2.13 to 4.5 and were increased as the temperature was decreased. Some samples showed increase of $J_c$ and decrease of resistivity when a magnetic field in applied parallel to the c-axis. We interpret this angle dependence in terms of enhanced flux pinning due to columnar growth of $MgB_2$ along the c-axis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.2
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• pp.63-68
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• 2021

This study was focused to investigate the effect of NbC-coated crucible on the quality of the SiC crystals. Then, the different properties between SiC crystals grown in a conventional graphite crucible and NbC-coated crucible were systematically compared. SiC crystals were grown using the Physical Vapor Transport (PVT) method at a temperature of 2300℃ and a pressure of 5 Torr in Ar atmosphere. After grinding and polishing, the polytype of the grown SiC crystal was analyzed using Raman spectroscopy, and crystallinity was confirmed by HR-XRD. Furthermore, the defect density and the concentration of impurities were analyzed by an optical microscope and a SIMS, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.10
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• pp.1-7
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• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.