• 한국표면공학회지
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• 제48권5호
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• pp.245-252
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• 2015

In recent years, the cleaning and activation technology of surfaces using atmospheric plasma as well as the deposition technology for coating using atmospheric plasma have been demonstrated conclusively and drawn increasing industrial attention. Especially, due to the simplicity, the technology using atmospheric plasma enhanced chemical vapor deposition has been widely studied from many researchers. The plasma source type commonly used as the stabilization of diffuse glow discharges for atmospheric pressure plasma enhanced chemical vapor deposition pressure is the dielectric barrier discharge. In this review paper, some kinds of modified dielectric barrier discharge type will be presented. And, the characteristics of silicon based compound such as SiOx and SiNx deposited using atmospheric plasma enhanced chemical vapor system will be discussed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.133-133
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• 2018

증착(Vapor Deposition)이란 어떤 물질을 증기화 시켜 기판에 응축시키는 공정을 말하며 물리증착(Physical Vapor Deposition; PVD)과 화학증착(Chemical Vapor Deposition)으로 대별된다. 빗각 증착 (Oblique Angle Deposition; OAD) 기술은 입사 증기가 기판에 비스듬히 입사하도록 조절하여 코팅하는 물리증착 기술의 하나로 피막의 조직을 다양하게 제어할 수 있으며 따라서 피막의 특성 제어가 가능한 기술이다. 지금까지 빗각증착은 증기의 산란이 발생하지 않는 $10^{-5}$ 토르 이하의 고진공에서 이루어져 왔다. 본 연구에서는 플라즈마를 이용한 스퍼터링과 음극 아크 증착을 이용하여 질화티타늄(TiN; Titanium Nitride) 박막을 제조하고 그 특성을 평가하였다. TiN 박막은 내마모성 향상 및 장식용 코팅에 널리 이용되고 있다. 박막 제조시 특히 바이어스 전압을 박막 조직의 기울기를 제어하는 수단으로 이용하였고 빗각과 바이어스 전압을 이용하여 다층박막의 조직제어에 활용하였다. 박막의 미세구조와 방위, 경도를 SEM, XRD, Nano Indenter를 이용하여 측정하였고 반사율 및 박막의 조도는 Spectrophotometer와 조도 측정기를 이용하여 측정하였다. 기울어진 조직 및 V형태의 조직이 단층 및 다층의 피막에서 명확하게 관찰됨을 확인하였고 특히 마지막 층 제조시 바이어스 전압을 인가할 경우 탄성계수는 크게 변하지 않는 상황에서 경도가 증가함을 확인하였다.

• 열처리공학회지
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• 제28권1호
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• pp.7-16
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• 2015

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.297-300
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• 1997

In this study, The PVDF thin film was fabricated on the one method of dry-process the physical vapor deposition method, applied electric field, and evaporation control in $\beta$-PVDF thin film preparation. A study on the electric-field-phase change of PVDF thin film in physical vapor deposition using the polymer deposition apparatus which are manufactured for oneself. In the analysis of Fourier-Transform Infrared spectra, according to increasing of electric field intensity, the 510$cm^{-1}$ / peak and 1273$cm^{-1}$ / peak which are showed in $\beta$-PVDF increase, on the contrary the 530$cm^{-1}$ / peak and 977$cm^{-1}$ / peak which are showed in $\alpha$-PVDF decrease.

• 대한기계학회논문집B
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• 제23권2호
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• pp.262-271
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• 1999

A study of aerosol dynamics has been done to obtain axially and radially varying size distributions of particles generated in the Modified Chemical Vapor Deposition process. Heat and mass transfer have also been studied since particle generation and deposition strongly depend on the temperature field in a tube. Bimodal size distributions of particles have been obtained both in the particulate flow and in the deposited particle layer for the first time using the sectional method to solve aerosol dynamics. Variations of geometric mean diameter, geometric standard deviation have been studied for various parameters; flow rates and maximum wall temperature. The comparison between one-dimensional and two-dimensional approaches has also been made.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1615-1620
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• 2003

The purpose of the study is not only to establish experimental system for laser chemical vapor deposition but also to find the characteristics of SiC rod growth that is the beginning step in developing technology of 3 dimensional prototyping with laser chemical vapor deposition. In this study, SiC rod was generated with varying TMS pressure for 5 minutes. Deposition rates with varying TMS pressure, shapes of rods, surface roughness and component organization were investigated, in particular.

• 한국세라믹학회지
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• 제32권10호
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• pp.1103-1110
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• 1995

Silicon carbide (SiC) films have been deposited on the isotropic graphite by chemical vapor deposition. Change of deposition parameters affected significantly the microstructure and preferred orientation of SiC films. Preferred orientation of SiC films was (111) or (220), and microstructure showed the startified structure consisting of small crystallite or faceted columnar structure depending on the deposition parameters. For microhardness, (111) oriented film and stratified structure were superior to (220) oriented film and faceted columnar structure, respectively. Surface of (111) oriented films was less rough than that of (220) oriented films. Adhesion force between graphite substrate and SiC films was above 100N for crystalline films and 49N for amorphous film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
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• pp.108-110
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• 2006

A prediction model of charge concentration of silicon nitride (SiN) thin films was constructed by using neural network and genetic algorithm. SIN films were deposited by plasma enhanced chemical vapor deposition and the deposition process was characterized by means of $2^{6-1}$ fractional factorial experiment. Effect of five training factors on the model prediction performance was optimized by using genetic algorithm. This was examined as a function of the learring rate. The root mean squared error of optimized model was 0.975, which is much smaller than statistical regression model by about 45%. The constructed model can facilitate a Qualitative analysis of parameter effects on the charge concentration.

• 한국표면공학회지
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• 제27권1호
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• pp.36-44
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• 1994

The TiN films were deposited on the stainless substrates using arc vapor ion deposition process to in-vestigated the wear resistance. Pin-on-disc tests were performed to measure the volume wear loss of TiN films. The substrate bias voltages and nitrogen flow rates were selected as the deposition parameters of TiN films. It was found that the wear resistance of TiN films was enhanced with increasing bias voltages(0~-300 V) and nitrogen flow rates(220~380 SCCM). The volume wear loss TiN films were about 9.5~2.1$\times$$10^{-3}mm^3$ and 3.5~2.2$\times$$10^{-3}mm^3$ with bias voltages and nitrogen flow rates, respectively.

• 한국세라믹학회지
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• 제37권2호
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.