• 동력기계공학회지
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• 제4권4호
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• pp.99-107
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• 2000

In this study several P type and N type ceramic semiconductors were prepared by atomic valence control and their electric resistivities were investigated with various concentrations of additive impurities. N-P junctions were made by thin film printing method and their varistor-like characteristics were investigated and their availability was discussed. The results are followings, 1) Some N type semiconductors with a proper concentration of additive impurity have minimum resistivities. 2) The N-P junction samples with ZnO as a constituent material of N type semiconductor have linearity in voltage-current characteristics, but the other N-P junction samples have the non-linearity, 3) Some N-P junction samples showed the good varistor-like characteristics.

• Bulletin of the Korean Chemical Society
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• 제29권2호
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• pp.475-478
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• 2008

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.53-53
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• 1998

Four valence of Chromium ion doped Yttrium Aluminum Garnet crystals were grown by Floating Zone and Czochralski methods. Changes of valence for Chromium (3+) ion to Chromium (4+) were achieved by substitution of Yttrium ion in dodecahedral site to Calcium and by substitution of Aluminum in octahedral site to Magnesium. Growth conditions for high quality of crystals were investigated. Grown crystals were cut and polished and then observed various types of defects. Characterizations by means of measurement of density and lattice parameter as a function of solidification fraction were performed. Results of Q-switching test using grown crystals were also reported.

• Journal of Magnetics
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• 제4권3호
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• pp.102-106
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• 1999

Ce exhibits the intermediate valence (IV) state both as an element and in its compounds. In the present review characteristic behavior of the materials showing the IV state are described. Then the methods of producing this state : the application of the external pressure, temperature and magnetic field as well as the alloying are being discussed. An identification of the IV state is frequently not a simple goal and the best results can be obtained using a combination of various independent methods. Particular attention is paid to the X-ray spectroscopy, lattice parameters and the magnetic properties. As the examples of the IV state in the Ce compounds the properties of following materials are reported : CeRhSb, $CeCu_5In_7, CeAg_6In_6, Sc_{1-x}Ce_xFe_4Al_8 $and for comparison Sc1-xYbxFe4Al8.

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.652-660
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• 2004

The cis-hex-3-ene-1,5-diynyl-bridged diiron compound 3, [(η$^{5}$ - $C_{5}$ M $e_{5}$ ) Fe(dppe)］$_2$($\mu$-C≡C-CH=CH-C≡C), have been prepared and characterized by cyclic voltammetry(CV), and electronic spectroscopy (UV-VIS and near-IR, NMR). From the results, compound 3 show two well resolved, single-electron, reversible oxidation waves by CV, and comproportionation constant(Kc) calculated from the CV data for compound 3. The Mixed-valence (MV) radical cation 3$^{+}$ show strong absorptions in the near IR, 1586 nm, and this band is more readily assigned as MV $\pi$-$\pi$ band of delocalized complex (Robin-Day Mixed-valence Class III), and the $H_{ab}$ , effective coupling parameter are most consistent with electronic delocalization.

• International Journal of Contents
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• 제16권1호
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• pp.44-56
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• 2020

The purpose of this study was to examine how the presentation mode (sequential- vs. simultaneous-mode) of information influences its evaluation. Three experiments revealed the interaction effect between the presentation mode and the valence of the product information. When respondents read about the positive aspects of the product, the evaluation was higher in the simultaneous presentation mode than in the sequential presentation mode. For negative product information, respondents' evaluation was higher in the sequential presentation mode than in the simultaneous presentation mode. The simultaneous presentation mode intensified the impact of the information valence on evaluation. This study proposed that the sequential and the simultaneous presentation modes prime high and low construal levels, respectively. The mediation analysis provides support for such a prediction. Finally, the mediating effect of construal levels in evaluation was shown to disappear when respondents focused on the product information for a longer duration, while the mediation effect remained when the response time was short.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.166-166
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• 2000

We studied electronic structure of magnetic semiconductors EuO, EuS, and EuTe. The photoemission spectra show localized Eu 4f states and broad anion p bands. As the size of anion increases from oxygen to tellurium, anion p band width increases and eventually overlaps Eu 4f states. Hence in EuO and EuS, Eu 4f states are the highest occupied stated lying above anion p band, while Te 5p band spreads widely over Eu 4f states to become valence band maximum in EuTe. It was also observed that Eu 4f states have width of 0.7eV and dispersion of 0.2eV in EuS by angle resolved photoemission spectroscopy. The width of the 4f spectra mainly originates from atomic multiplets, but the much larger dispersion than that of Eu metal is due to p-f mixing.

• Bulletin of the Korean Chemical Society
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• 제8권5호
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• pp.384-388
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• 1987

Modified Bloch equations were used to simulate the solution EPR spectra of mixed-valence heteropolyanions containing vanadium(IV) and vanadium(V). Simulated are the 15-, 22-, 36- and 43-line spectra of $\alpha$-1,2-$[PV(IV)VW_{10})O_{40}]^{6-},\;[P_2V(IV)V_2W_{15}O_{62}]^{10-},\;[HP_2V(IV)V_2W_{15}O_{62}]^{9-}$ and $\alpha$-1,2,3-$[HSiV(IV)V_2W_9O_{40}]^{7-}$, respectively. The transition probabilities for the intramolecular electron transfer were determined from the simulations.

• Bulletin of the Korean Chemical Society
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• 제13권4호
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• pp.385-388
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• 1992

The transition probabilities for the thermal intramolecular electron transfer and the optical intervalence transfer band for a symmetric mixed-valence Cu(I)-Cu(II) compound were used to extract the PKS parameters $\varepsilon$ = -1.15, ${\lambda}$ = 2.839, and ${\nu}g$- = 923 $cm^{-1}$. These parameters determine the potential energy surfaces and vibronic energy levels. Three pairs of vibrational levels are below the top of the energy barrier in the lower potential surface. The contribution of each vibrational state to the intramolecular electron transfer was calculated. It is shown that the three pairs of vibrational states below the top of the barrier are responsible for most of the electron transfer at 261-306 K. So the intramolecular electron transfer in this system is a tunneling process. The transition probability exhibits the usual high-temperature Arrhenius behavior, but at lower temperature falls off to a temperature-independent value as tunneling from the lowest levels becomes the limiting process.

• Bulletin of the Korean Chemical Society
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• 제19권2호
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• pp.212-217
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• 1998

The electrochemistry and valence tautomerism of CoⅢ(N-N)(SQ)(Cat), [N-N=N,N,N',N'-tetramethylethylenediamine (TMEDA); SQ=3,5- or 3,6-di-tert-butyl-semiquinone, Cat=3,5- or 3,6-di-tert-butyl-catechol], have been investigated by spectroscopic, electrochemical, spectroelectrochemical methods in nonaqueous solvents under anaerobic condition. The transition temperature between tautomers is dependent upon the donation effect of substituted quinone ligand and solvent. It increases with the increase of donation effect of solvent and quinone ligand. CoⅢ(TMEDA)(SQ)(Cat) is reduced to [CoⅡ(TMEDA)(SQ)(Cat)]-, and then reduces to [CoⅡ(TMEDA)(Cat)2]2-. CoⅢ(TMEDA)(SQ)(Cat) is oxidized to [CoⅢ(TMEDA)(SQ)2]+, but the stability of the oxidized form in DMF is dependent upon the solution temperature. With the increase of solution temperatrue the oxidized form may be converted to [CoⅡ(TMEDA)(SQ)(BQ)]+ by intramolecular electron transfer from SQ ligand to CoⅢ.