• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.291-291
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• 2013

The wettability of TiO2 layers is controlled by forming highly ordered arrays of nanocones using nanopatterning, based on self-assembly and dry etching. Nanopatterning of TiO2 layers is achieved via formation of self-assembled monolayers of SiO2 spheres fabricated using the Langmuir-Blodgett technique, followed by dry etching. Compared to a thin film TiO2 layer, the nanopatterned TiO2 samples show a smaller static water contact angle, where the water contact angle decreases as the etching time increases, which is attributed to the Wenzel equation. When TiO2 layers are coated by 1H,1H,2H,2H-perfluorooctyltrichlorosilane, we observed the opposite behavior, exhibiting superhydrophobicity (up to contact angle of $155^{\circ}$) on the nanopatterned TiO2 layers. Self-assembled nanopatterning of the TiO2 layer may provide an advanced method for producing multifunctional transparent layers with self-cleaning properties.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.235-239
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• 2002

A new method for deep trench isolation using selective growth of polycrystalline silicon is proposed. In this method, trench filling is performed by forming polysilicon-inner sidewalls within the trench, and then selectively growing them by reduced chemical vapor deposition using $SiH_2C1_2$gas at $1100^{\circ}C$. The surface profiles of filled trenches are determined mainly by the initial depth of inner sidewalls and the total thickness of selective growth. No chemical mechanical polishing(CMP) process is needed in this new method, which makes the process flow simpler and more reliable in comparison with the conventional method using CMP process.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.113-118
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• 1996

Aligning a cathode tip at the center of a gate hole is important in gated filed emission devices. We have fabricated a silicon field emitter using a following process so that a cathode and a gate hole are automatically aligned . After forming silicon tips on a silicon wafer, the wafer was covered with the $SiO_2$, gate metal, and photoresistive(PR) films. Because of the viscosity of the PR films, a spot where cathode tips were located protruded above the surface. By ashing the surface of the PR film, the gate metal above the tip apex was exposed when other area was still covered with the PR film. The exposed gate metal and subsequenlty the $SiO_2$ layer were selectively etched. The result produced a field emitter in which the gate film was in volcano shape and the cathode tip was located at the center of the gate hole. Computer simulation showed that the volcano shape and the cathode tip was located at the center of the gat hole. Computer simulation showed that the volcano shape emitter higher current and the electron beam which was focused better than the emitter for which the gate film was flat.

• Tribology and Lubricants
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• v.13 no.4
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• pp.60-65
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• 1997

The tungsten disulfide $(WS_2)$ solid lubricant was synthesized by two different reaction processes, i.e., the reaction between $CS_2$ gas phase and solid $WO_3$powder, and the vapour phase transport method of tungsten and sulfur in a high vacuum. The chemical and physical characteristics of synthesized $WS_2$powder were analyzed in terms of the average particle size, morphology, crystalline phase etc. in comparison with those of commercial $WS_2$powder. The solid $WO_3$ powder with the average size of 0.2 ${\mu}{\textrm}{m}$ was reacted with $CS_2$gas flowed with$N_2$or 96%$N_2{\times}4%H_2$forming gas for 36 h and 24 h at 90$0^{\circ}C$ respectively. $WS_2$ crystalline phase was then formed through the intermediate phase of .$W_{20}O_{58}$ In the case of vapour phase transport method, the 3.5 wt% iodine was added as a vapour transport reagent into the composition of tungsten and sulfur powders maintaining a constant molar ratio of W:S=1:2.2. The mixture was then heat treated at 85$0^{\circ}C$ for 2 weeks in vacuum. The reaction product obtained showed the average size of 12 ${\mu}{\textrm}{m}$ and the hexagonal plate shape of typical solid lubricant with 2H-$WS_2$crystalline phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.95-95
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• 2010

An apparatus for generating flames and more particularly the microwave plasma burner for generating high-temperature large-volume plasma flame was presented. The plasma burner was composed of micvrowave transmission lines, a field applicator, discharge tube, coal and gas supply systems, and a reactor. The plasma burner is operated by injecting coal powders into a 2.45 GHz microwave plasma torch and by mixing the resultant gaseous hydrogen and carbon compounds with plasma-forming gas. We in this work used air, oxygen, steam, and their mixtures as a discharge gas or oxidant gas. The microwave plasma torch can instantaneously vaporize and decompose the hydrogen and carbon containing fuels. It was observed that the flame volume of the burner was more than 50 times that of the torch plasma. The preliminary experiments were carried out by measuring the temperature profiles of flames along the radial and axial directions. We also investigated the characteristics for coal combustion and gasification by analyzing the byproducts from the exit of reactor. As expected, various byproducts such as hydrogen, carbon monoxide, carbon dioxide, hydrogen sulfide, etc. were detected. It is expected that such burner cab be applied to coal gasification, hydrocarbon reforming, industrial boiler of power plants, etc.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.378.1-378.1
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• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.180.2-180.2
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• 2014

Opening a bandgap by forming graphene nanoribbons (GNRs) and tailoring their properties via doping is a promising direction to achieve graphene-based advanced electronic devices. Applying a first-principles computational approach combining density functional theory (DFT) and DFT-based non-equilibrium Green's function (NEGF) calculation, we herein study the structural, electronic, and charge transport properties of boron-nitrogen binary edge doped GNRs and show that it can achieve novel doping effects that are absent for the single B or N doping. For the armchair GNRs, we find that the B-N edge co-doping almost perfectly recovers the conductance of pristine GNRs. For the zigzag GNRs, it is found to support spatially and energetically spin-polarized currents in the absence of magnetic electrodes or external gate fields: The spin-up (spin-down) currents along the B-N undoped edge and in the valence (conduction) band edge region. This may lead to a novel scheme of graphene band engineering and benefit the design of graphene-based spintronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.205.2-205.2
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• 2014

The effects of ion beam mixing of a SiC film coated on super alloys (hastelloy X substrates) were studied, aiming at developing highly sustainable materials at above $900^{\circ}C$ in decomposed sulfuric acid gas (SO2/SO3/H2O) channels of a process heat exchanger. The bonding between two dissimilar materials is often problematic, particularly in coating metals with a ceramics protective layer. A strong bonding between SiC and hastelloy X was achieved by mixing the atoms at the interface by an ion-beam: The film was not peeled-off at ${\geq}900^{\circ}C$, confirming excellent adhesion, although the thermal expansion coefficient of hastelloy X is about three times higher than that of SiC. Instead, the SiC film was cracked along the grain boundary of the substrate at above $700^{\circ}C$. At ${\geq}900^{\circ}C$, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed areas and cracks multiple coating/IBM processes have been developed. An immersion corrosion test in 80% sulfuric acid at $300^{\circ}C$ for 100 h showed that the weight retain rate was gradually increased when increasing the processing time.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.196-197
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• 2010

NAND형 charge trap flash (CTF) non-volatile memory (NVM) 소자가 30nm node 이하로 고집적화 되면서, 기존의 SONOS형 CTF NVM의 tunnel barrier로 쓰이는 SiO2는 direct tunneling과 stress induced leakage current (SILC)등의 효과로 인해 data retention의 감소 등 물리적인 한계에 이르렀다. 이에 따라 개선된 retention과 빠른 쓰기/지우기 속도를 만족시키기 위해서 tunnel barrier engineering (TBE)가 제안되었다. TBE NVM은 tunnel layer의 전위장벽을 엔지니어드함으로써 낮은 전압에서 전계의 민감도를 향상 시켜 동일한 두께의 단일 SiO2 터널베리어 보다 빠른 쓰기/지우기 속도를 확보할 수 있다. 또한 최근에 각광받는 high-k 물질을 TBE NVM에 적용시키는 연구가 활발히 진행 중이다. 본 연구에서는 Si3N4와 HfAlO (HfO2 : Al2O3 = 1:3)을 적층시켜 staggered의 새로운 구조의 tunnel barrier Capacitor를 제작하여 전기적 특성을 후속 열처리 온도와 방법에 따라 평가하였다. 실험은 n-type Si (100) wafer를 RCA 클리닝 실시한 후 Low pressure chemical vapor deposition (LPCVD)를 이용하여 Si3N4 3 nm 증착 후, Atomic layer deposition (ALD)를 이용하여 HfAlO를 3 nm 증착하였다. 게이트 전극은 e-beam evaporation을 이용하여 Al를 150 nm 증착하였다. 후속 열처리는 수소가 2% 함유된 질소 분위기에서 $300^{\circ}C$와 $450^{\circ}C$에서 Forming gas annealing (FGA) 실시하였고 질소 분위기에서 $600^{\circ}C{\sim}1000^{\circ}C$까지 Rapid thermal annealing (RTA)을 각각 실시하였다. 전기적 특성 분석은 후속 열처리 공정의 온도와 열처리 방법에 따라 Current-voltage와 Capacitance-voltage 특성을 조사하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.325-325
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• 2011

Very initial stage of oxidation process of Si (001) surface at room temperature (300 K) and high temperature (1200 K) was investigated using large scale molecular dynamics simulation. Reactive force field potential [1] was used for the simulation owing to its ability to handle charge variation as well as breaking and forming of bonds associated with the oxidation reaction. The results show that oxygen molecules adsorb dissociatively or otherwise leave the silicon surface. Initial position and orientation of oxygen molecule above the surface play important role in determining final state and time needed to dissociate. At 300 K, continuous transformation of ion $Si^+$ (or suboxide Si2O) to $Si2^+$ (SiO), $Si3^+$ (Si2O3) and finally to $Si4^+$ (SiO2) clearly observed. High temperature silicon surface provide heat energy that enable oxygen atom to penetrate into deeper silicon surface. The heat energy also retards adsorption process. As a result, transformation of ion $Si^+$ is impeded at 1200 K.