• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1855-1862
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• 2023

Graphite crucibles are used for melting uranium and its alloys in VIM furnace. Various coating materials namely Al₂O₃, ZrO₂, MgO etc. are applied on the inner surface of the crucibles using paint brush or thermal spray technique to mitigate U-C interaction. These leads to significant amount of carbon pick-up in uranium. In this study, the attempts are made to develop multilayer coatings comprising of SiC/Y₂O₃ and Mo/Y₂O₃ on graphite to study the feasibility of minimizing U-C interaction. The parameters are optimized to prepare SiC coating of about 70㎛ thickness using CVD technique on graphite coupons and subsequently Y₂O₃ coating of about 250㎛ thickness using plasma spray technique. Molybdenum and Y₂O₃ layers were deposited using plasma spray technique with 70㎛ and 250㎛ thickness, respectively. Interaction studies of the coated graphite with molten uranium at 1450℃ for 20 min revealed that Y₂O₃ coating with SiC interlayer provides physical barrier for uranium-graphite interaction, however, this led to the physical separation of coating layer. Y₂O₃ coating with Mo interlayer provided superior barrier effect showing no degradation and the coatings remained intact after interaction tests. Therefore, the Mo/Y₂O₃ coating was found to be a promising solution for minimizing carbon pick-up during uranium/uranium alloy melting.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.92-96
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• 2002

In this paper, we treated the Ni$_3$Al based alloy samples with intense pulsed ion beams (IPIB) at the beam parameters of 250KV acceleration voltage, 100 - 200 A/cm$^2$ current density and 60 u pulse duration. We simulated the thermal-mechanical process near the surface of Ni$_3$Al based alloy with our STEIPIB codes. The surface morphology and the cross-section microstructures of samples were observed with SEM, the composition of the sample surface layer was determined by X-ray Energy Dispersive Spectrometry (XEDS) and the microstructure on the surface was observed by Transmission Electron Microscope (TEM). The results show that heating rate increases with the current density of IPIB and cooling rate reached highest value less than 150 A/cm$^2$. The irradiation of IPIB induced the segregation of Mo and adequate beam parameter can improve anti-oxidation properly of IC6 alloy. Some craters come from extraneous debris and liquid droplets, and some maybe due to the melting of the intersection region of interphase. Increasing the pulse number enlarges average size of craters and decreases number density of craters.

• Particle and aerosol research
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• v.6 no.3
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• pp.131-138
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• 2010

Flexible electronics are the electronics on flexible substrates such as a plastic, fabric or paper, so that they can be folded or attached on any curved surfaces. They are currently recognized as one of the most innovating future technologies especially in the area of portable electronics. The conventional vacuum deposition and photolithographic patterning methods are well developed for inorganic microelectronics. However, flexible polymer substrates are generally chemically incompatible with resists, etchants and developers and high temperature processes used in conventional integrated circuit processing. Additionally, conventional processes are time consuming, very expensive and not environmentally friendly. Therefore, there are strong needs for new materials and a novel processing scheme to realize flexible electronics. This paper introduces current research trends for flexible electronics based on (a) nanoparticles, and (b) novel processing schemes: nanomaterial based direct patterning methods to remove any conventional vacuum deposition and photolithography processes. Among the several unique nanomaterial characteristics, dramatic melting temperature depression (Tm, 3nm particle~$150^{\circ}C$) and strong light absorption can be exploited to reduce the processing temperature and to enhance the resolution. This opens a possibility of developing a cost effective, low temperature, high resolution and environmentally friendly approach in the high performance flexible electronics fabrication area.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.85.2-85.2
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• 2016

With the advent of ultra-short high-intense XFEL (X-ray Free Electron Laser), time-resolved dynamics has become of great importance in exploring femtosecond real-world phenomena of nanoscience and biology. These include studying the response of materials to femtosecond laser excitation and investigating the interaction of XFEL itself with condensed matter. A variety of dynamic phenomena have been investigated such as radiation damage, ultrafast melting process, non-equilibrium phase transitions caused by orbital-lattice-spin couplings. As far as bulk materials are concerned, the sample size has no effect on the following dynamic process. As a result, imaging information is not required by and large. If the sample size is of tens of nanometers, however, sample starts to experience quantum confinement effect which, in turn, affects the following dynamic process. Therefore, to understand the fundamental dynamic phenomena in nano-science, time-resolved imaging information is essential. In this talk, we will briefly introduce scientific highlights achieved in XFEL-based dynamics. In case of bio-imaging, recent scientific topics will be mentioned as well. Finally, we will aim to present feasible topics in ultrafast time-resolved imaging and to discuss the future plan of CXI beamline at PAL-XFEL.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.93-101
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• 1999

The purposed of this paper is to investigate the electrical and thermal stability of Polyvinylidene fluoride(PVDF) organic thin films prepared by the vapor deposition method. The differential scanning calorimetry curve of the PVDF organic thin films prepared by increasing substrate temperature showed that the melting curve increased from $128^{\circ}C$ to $142^{\circ}C$. This result implied that the PVDF organic thin film prepared by increasing substrate temperature increased intermolecular force in the crystalline region. The anomalous properties in dielectric constant and dielectric loss at low frequency and high temperature were described for PVDF organic thin film containing impurity carriers. It was confirmed that in view of electric conductive characteristics the ohm's law is satisfied in the range of lower electric field and ln J was proportional to the electric field ln E as like the conventional property of ionic conduction in the range of higher electric field. It was confirmed that major carrier of conductivity was ions. The electrical stability was improved according to an increase of the substrate temperature. On the basis of this experimental result, it could be observed that the optimum temperature of substrate for the electrical and thermal stability was at $105^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.403-410
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• 2001

Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute Al-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of I-beam Cu and AA in the same conditions. The electromigration experiments were performed with Cu/Al/TiN multilayer. Experimental results shows that the deposition rate and electromigration characteristics of Cu thin film were improved by the Al interlayer.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.119-119
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• 1999

GaN-based 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자가 상용화되었을 뿐만아니라 HBT, FET와 같은 전기소자로도 널리 응용될 시점이지만 아직까지 해결되지 않은 문제점들이 있다. 그 중에 하나가 바로 GaN의 격자상수와 일치하는 기판이 없어 발생하는 dislocation인데, 이를 해결하기 위한 방법으로 새로운 기판이나, buffer, 또는 새로운 성장방법(ELOG) 등을 시도하고 있으나 dislocation density는 아직 높은 (107~1010cm-2) 상태이다. 이에 본 연구에서는 dislocation을 줄이기 위한 방책으로 InxGa1-xN를 새로운 buffer층으로 사용하여 GaN 박막을 MBE 방법으로 성장하였다. InxGa1-xN를 선택한 이유는 GaN와의 격자상수차이가 In0.12Ga0.88N일 경우 거의 일치한다는 보고가 있으며, 특히 InGaN의 melting point는 GaN의 성장온도 보다는 약간 높기 때문에 GaN 박막을 성장할 때와 식힐 때의 InGaN 원자결합은 약하게 작용되며, 결국 이는 열적인 stress를 줄여주게 된다. 이와 같이 성장된 GaN 박막은 그 결정성을 XRD로 분석하였고, 표면과 계면을 SEM으로 관찰하였다. 그리고 그 광학적 특성을 저온 PL로서 조사하였다. 그 결과를 살펴보면 35$^{\circ}$ 근방에서 GaN(0002) peak가 나온 것으로 보아 wurtzite 구조가 성장됨을 XRD로부터 확인하였다. 그리고 저온 (12K) PL에서는 3.470eV의 D$^{\circ}$X peak뿐만 아니라 3.258eV에 해당하는 peak를 얻었는데, 이는 InxGa1-xN buffer layer의 vapour pressure가 높은 (<50$0^{\circ}C$)에 도달하게 됨으로써 dissociation이 일어나면서 초기 성장이 이루어졌고 이는 다시 계면에서의 inter-diffusion을 발생시킨 것으로 보여진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.208.1-208.1
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• 2014

반도체 공정이나 디스플레이 공정에는 세라믹 부품이나 금속 부품이 많이 포함되어 있는데 이들 부품이 공정중에 발생하는 플라즈마 또는 여러가지 부산물에 의하여 부품의 표면에 다양한 코팅층이 형성된다. 그리고 이러한 공정에 들어가는 부품은 플라즈마 또는 각종 산에 취약한 특성을 나타내는데 이에 대하여 해결하기 위하여 세라믹 부품의 표면에 용사코팅이나 각종 물리, 화학적 방법을 이용하여 표면에 코팅층을 형성한다. 이렇게 형성된 코팅층중 특히 용사코팅에 의하여 형성된 코팅층은 플라즈마 공정이나 각종 부식성 산에 의하여 박리 또는 크랙이 발생하게 된다. 이러한 특성은 용사코팅층의 특성상 발생하고 있는 물리적 흡착에 의하여 흡착된 계면에서 박리가 발생할 가능성이 크게 된다. 이러한 현상을 줄이기 위하여 고열원을 통하여 열처리 실험을 실시한다. 특히 전자빔이나 레이저 열원은 고온 급속 가열에 의하여 고융점인 세라믹 용사코팅층 및 금속 코팅층을 재용융 및 응고과정을 통하여 미세구조를 변화시킨다. 특히 전자빔 열처리는 진공중에서 코팅층의 열처리를 행함으로써 코팅층 내에 있는 기공을 제거하거나 불순물을 제거하기에 용이하다. 본 연구에서 수행된 열처리는 기 코팅된 세라믹이나 금속재의 표면을 다량의 Electron의 Flux를 통하여 표면의 온도를 Melting point 직하 온도까지 상승하였다가 응고시킴으로써 코팅층의 특성을 변화시켰다. 이렇게 열처리된 시험편의 XRD를 통해 결정구조를 파악하고, SEM, OM을 통하여 기공의 제거, 결함의 제거 등을 확인하였으며 경도 변화를 통하여 물리적 특성의 변화를 함께 확인하였다. 평가 결과 결정구조의 변화와 더불어 경도등의 상승효과가 발생하였으며 코팅층 내에 존재하는 결함이 감소함을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.286-286
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• 2011

현재의 NEDO (New Energy and industrial technology Development Organization) style Si 정련은 두 단계로 구분되어 있다. 고출력 집속 전자빔을 이용한 금속 실리콘의 1차 용융과 대기압 근처의 플라즈마 아크 용해를 이용해서 B, P를 약간의 반응성 가스를 첨가 하여 제거하는 방법이다. 그러나 저가형 실리콘을 생산하려는 취지와 달리 두 가지의 고가 장비가 필요하다. E-beam melting 장치에서도 반응성이 높은 라디칼을 생성할 수 있다면 하나의 장비에서 두 가지의 정련 작업을 진행시킬 수 있다. 본 연구에서는 고진공에서(< 10-4 Torr) 동작하는 E-beam의 성능에 전혀 영향을 주지 않으면서 플라즈마를 용이하게 생성 시킬 수 있는 방법을 개발하고 이를 적용하여 실제 금속 순도 실리콘 내에 존재하는 B, P가 제거되는지 확인하는 것을 연구 내용으로 한다. 본 연구는 MG (Metal Grade) - Si 을 플라즈마 보조 전자빔 정련을 이용하여 정련한 Si 의 불순물 함량의 개선 효과를 조사하는 것이다. MG-Si 의 정련 방법 중에서 고출력 집속 전자빔을 이용하여 휘발성 오염물질을 제거 후, 플라즈마 아크 용해를 이용해서 B 를 제거하는 방법을 접목시켰다. MG-Si 에 DC power 와 전자빔을 집속시켜서 정련을 하면 챔버 내의 잔류 수증기가 플라즈마에 의해 분해되어 O를 생성하고, B와 반응을 하여 BO 형태로 제거가 된다. 방전 전압 700 V 와 전자빔 가속 전압이 4.5 kV, 방출 전류는 11 A, 진공 챔버 내의 압력은 $7.2{\times}10^{-4}$ Torr에서 정련을 진행하여 B를 제거했다.