• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.156.2-156.2
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• 2015

반도체 소자의 크기가 나노사이즈로 줄어들기 때문에, 건식식각의 중요성이 강조되고 있다. dual plasma source를 사용함으로써 plasma 밀도, 이온충돌에너지, 이온플럭스를 조절 가능하다. Low frequency로 이온에너지를 조절하고, high frequency로 이온플럭스를 일반적으로 조절한다. 본 연구는 inductively coupled plasma (ICP)와 capacitively coupled plasma (CCP)를 사용하는 dual plasma source이다. ICP는 AE RPS로 2.4 MHz를 사용하고, CCP는 AE RFX-600으로 13.56 MHz이다. single L-probe는 Hiden ESPion이고, quadrupole mass spectrometer (QMS)는 INFICON CPM-300이다. chuck에 CCP가 인가되고, ICP는 SUS mesh를 거쳐서 영향을 미친다. Gas는 Ar, Ar+CF4 두 조건에서 비료를 하였다. Single L-probe를 이용하여 플라즈마를 측정한 결과 CCP만 인가하였을 때, Te 2.05 eV, Ne 4.07E+10 #/cm3, Ni 5.82E+10 #/cm3의 결과를 얻을 수 있었다. ICP를 방전하고 mesh를 통해서 chuck으로 입사하는 이온을 측정한 결과 mesh에 의해 이온이 중성화되어 거의 입사하지 않음을 확인할 수 있었다. 최종적으로 이온의 영향이 상쇄되고, 라디칼의 영향이 증가하여 높은 etch rate와 선택비를 가지며, 등방성 식각의 영향이 커질 것으로 사료된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.67-73
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• 2017

Recently, macroporous ceramic materials with high electrical conductivity and mechanical strength are urgently needed for semiconductor and display manufacturing devices. In this work, we obtained electro-conducting macroporous aluminosilicate ceramics having surface resistivity of 108~1,010 ohm by dispersing electro-conducting carbon in ceramic matrix. By addition of 0.5~3.0 wt% frit glass, chemical bonding between grains was strengthened, and flexural strength was enhanced up to 160 MPa as a result. We evaluated the characteristics of present ceramics as vacuum chuck module for liquid crystal display display manufacturing devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.203.1-203.1
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• 2016

Poly etch 설비에서 발생하는 dechuck 불량에 의한 Dynamic Alignment(DA) error는 poly etch 설비에서의 고질 적인 문제이다. 발생 원인은 ElectroStatic Chuck(ESC)의 노후화 혹은process plasma에 의한 attack 등으로 ESC와 wafer간 dechucking이 진행될 때 wafer내의 전하가 완전히 discharge되지 못하여 wafer Sticking에 의한 sliding이 발생되며 심해지면 Dynamic Alignment(DA) Error가 발생한다. DA error 발생 되면 particle down으로 wafer는 scrap 되며 DA error가 지속적으로 발생하는 설비는 ESC 교체를 하고 있다. ESC 교체비용도 매우 크며 교체 전까지 설비가 멈추어있는 시간적인 손실이 발생하게 된다. Dechucking을 진행할 때 Wafer에 잔존하는 전하를 제거 하여 Wafer의 sticking을 줄여 DA error를 근원적으로 방지하기 위해 plasma를 이용하여 wafer와 ESC를 하나의 electric circuit으로 연결시키는 방법으로 wafer에 잔존하는 전하를 제거 시키고자 하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.668-672
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• 2005

Doosan DND, OLED manufacturing equipment maker, has developed the largest deposition system to produce $730{\times}920mm$ size AMOLED devices for the first time in the world. It is necessary for producing 40" AMOLED panels to develop the large-scaled vacuum technologies including ICP plasma, stretching glass chuck, organic deposition, metal deposition and hybrid encapsulation processes.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.331-339
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• 2017

Porous alumina-based ceramics are of special interest due to their outstanding mechanical properties and their thermal and chemical stability. Nevertheless, the high electrical resistance of alumina-based ceramics, due to the generation of static electricity, leads to difficulty in applying a vacuum chuck in the semi-conductor process. Therefore, development of alumina-based ceramics for applications with vacuum chucks aims to have primary properties of low electrical resistance and high air permeability. In this study, we tailored the electrical resistance of porous alumina-based ceramics by adjusting the amount of $MnO_2$ (with $TiO_2$ fixed at an amount of 2 wt%) and by using coarse alumina powder for high air permeability. The characteristics of the specimens were studied using scanning electron microscopy, mercury porosimeter, capillary flow porosimetry, universal testing machine, X-ray diffraction and high-resistance meter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.185-189
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• 2002

Flexible displays such as plastic based LCDs and organic light-emitting diodes for mobile communication devices have been researched and developed at KETI in KOREA since 1997. The Plastic film substrate has so poor thermal tolerance and non-rigidness that the fabrication of active devices and panel assembly have to perform at low temperature and pressure. In addition, high thermal expansion of the substrate is also a serious problem for reliable metallic film deposition. In this paper, we investigated particularly on the fundamental characteristics of various plastic substrates and then, suggested novel methods that improve the fabrication processes of plastic LCD panel. In order to maintain stable substrate surface and uniform cell gap during panel assembly, we utilized newly-invented iii and vacuum chuck. Electro-optical characteristics of fabricated plastic LCD are better than or equivalent to those of typical glass based LCDs though it is thinner, lighter-weight and more robust.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.253-261
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• 2004

The machining technology for the brittle materials such as ceramics are applied to the fields of MEMS(micro electromechanical system) by the progress of new machining technologies such as Etching, Diamond machining, Micro drilling, EDM(Electro discharge machining), ECDM(Electro discharge machining), USM(Ultrasonic machining), LBM(Laser beam machining), EBM(Electron beam machining). Especially, the USM technology can be applied to the dieletric brittle materials such as silicon, borosilicate glass, silicon nitride, quartz and ceramics with high aspect ratio. The micro machining system with machining force controlled position servo is developed in this paper and the optimized ultrasonic machining algorithm is constructed by the force controlled position servo control. The load cell is adapted in the force measuring and the servo control algorithm, suit for the ultrasonic machining characteristics, is estabilished with using the PID auto-tunning functions at the PMAC system which is generally adapted in the field of robot industries. The precision force signal amplifier is constructed with high precision operational amplifier AD524. The vacuum adsorption chuck which is made of titanum and internal flow line is engraved, is used in the workpiece fixing. The mahining results by USM shows that there are some deviation between the force command and the actual machining force that the servo control algorithm should be applied in the machining procedures. Therefore, the constant force controlled position servo system is developed for the micro USM system and by the examination machining process in USM, the stable USM system is realized by tracking the average value of machining force.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.546-552
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• 2010

The achievement of high gas permeability is a key factor in the development of porous SiC ceramics for applications of hot gas filter, vacuum chuck, and air spindle. However, few reports on the gas permeability of porous SiC ceramics can be found in the literature. In this paper, porous SiC ceramics were fabricated at temperatures ranging from $1600^{\circ}C$ to $1800^{\circ}C$ using the mixing powders of SiC, silicon, carbon and boron as starting materials. In some samples, expanded hollow microspheres as a pore former were used to make a cellular pore structure. It was possible to produce Si bonded SiC ceramics with porosities ranging from 42% to 55%. The maximum bending strength was 58MPa for the carbon content of 0.2 wt% and sintering temperature of $1700^{\circ}C$. The increase of air permeability was accelerated by addition of hollow microsphere as a pore former.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.599-602
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• 2002

A novel rapid prototyping (RP) process, an automated transfer type variable lamination manufacturing process (Automated VLM-ST) has been developed. In Automated VLM-ST, a vacuum chuck and linear moving system transfer the plate type material with two pilot holes to the rotation stage. A four-axis synchronized hotwire cutter cuts the material twice to generate Automated Unit Shape Layer (AUSL) with the desired width, side slopes, length, and two reference shapes in accordance with CAD data. Each AUSL is stacked on the stacking plate with two pilot pins using the pilot holes in AUSL and the pilot pins. Subsequently, adhesive is supplied to the top surface of the stacked AUSL by a bonding roller and pressure is simultaneously applied to the bottom surface of the stacked AUSL. Finally, three-dimensional shapes are rapidly fabricated. This paper describes the procedure for generating the cutting path data (AUSL data) f3r automated VLM-ST. The method for the generation of the Automated Unit Shape Layer (AUSL) in Automated VLM-ST was practically applied and fabricated for a various shapes.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.