• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.578-578
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• 2012

Graphene, a flat one-atom-thick two-dimensional layer of carbon atoms, is considered to be a promising candidate for nanoelectronics due to its exceptional electronic properties. Most of all, future nanoelectronics such as flexible displays and artificial electronic skins require low cost manufacturing process on flexible substrate to be integrated with high resolutions on large area. The solution based printing process can be applicable on plastic substrate at low temperature and also adequate for fabrication of electronics on large-area. The combination of printed electronics and graphene has allowed for the development of a variety of flexible electronic devices. As the first step of the study, we prepared the gate electrodes by printing onto the gate dielectric layer on PET substrate. We showed the performance of graphene field-effect transistor with electrohydrodynamic (EHD) inkjet-printed Ag gate electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.61-61
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• 2011

Polymer solar cells have become one of the rising next generation solar cells due to their potential for lightweight and bendable plastic solar modules. Recently, the power conversion efficiency of polymer solar cells has reached ~8 %, which can make ~6 % plastic solar modules when it comes to the modular aperture ratio of ~80 %. Although this efficiency is far behind that of conventional inorganic solar cells, the plastic solar modules are expected to create new energy market into which the inorganic solar modules could not make inroads. In the near future, the plastic solar modules can be integrated with consumer electronics that should overcome the regulation of energy consumption. For this application, the polymer solar cells should be fabricated in a variety of module shapes, which can be resolved by employing conventional and/or advanced coating and molding technologies of plastics products. In this tutorial, the fundamental aspect of polymer solar cells will be briefly introduced and then recent trends in terms of materials and devices will be reviewed together with showing recent results in organic nanoelectronics laboratory.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.108-109
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• 2013

Mitochondria play key roles in the production of cell's energy. Their dominant function is the synthesis of adenosine 5'-triphosphate (ATP) from adenosine diphosphate (ADP) and phosphate (Pi) through the oxidative phosphorylation. Evaluation of drug-induced mitochondrial toxicity has become increasingly important since mitochondrial dysfunction has recently been implicated in numerous diseases including cancer and diabetes mellitus. Mitochondrial functions have been monitored via oxygen consumption, mitochondrial membrane potential, and more importantly via ATP synthesis since ATP synthesis is the most essential function of mitochondria. Various analytical methods have been employed to investigate ATP synthesis in mitochondria, including high performance liquid chromatography (HPLC), bioluminescence technique, and pH measurement. However, most of these methods are based on destructive analysis or indirect monitoring through the enzymatic reaction. Infrared absorption spectroscopy (IRAS) is one of the useful techniques for real-time, label-free, and direct monitoring of biological reactions [1,2]. However, the strong water absorption requires very short path length in the order of several micrometers. Transmission measurements with thin path length are not suitable for mitochondrial assays because solution handlings necessary for evaluating mitochondrial toxicity, such as rapid mixing of drugs and oxygen supply, are difficult in such a narrow space. On the other hand, IRAS in the multiple internal reflection (MIR) geometry provides an ideal optical configuration to combine solution handling and aqueous-phase measurement. We have recently reportedon a real-time monitoring of drug-induced necrotic and apoptotic cell death using MIR-IRAS [3,4]. Clear discrimination between viable and damaged cells has been demonstrated, showing a promise as a label-free and real-time detection for cell-based assays. In the present study, we have applied our MIR-IRAS system to mitochondria-based assays by monitoring ATP synthesis in isolated mitochondria from rat livers. Mitochondrial ATP synthesis and hydrolysis were in situ monitored with MIR-IRAS, while dissolved oxygen level and solution pH were simultaneously monitored with O2 and pH electrodes, respectively. It is demonstrated that ATP synthesis and hydrolysis can be monitored by the IR spectral changes in phosphate groups in adenine nucleotides and MIR-IRAS is useful for evaluating time-dependent drug effects of mitochondrial toxicants.

• Vacuum Magazine
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• v.3 no.1
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• pp.9-15
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• 2016

Molybdenum disulfide ($MoS_2$), which has 0.65 nm-thick atomic layer, can be easily separated layer by layer due to weak van der Waals interactions in out-of-plane direction. ($MoS_2$), has a good potential in nanoelectronics, because it has high electrical mobility and On/Off ratio. Its band gap energy changes from indirect to direct band gap energy as it goes from bulk to monolayer. Therefore, atomically thin ($MoS_2$), is widely studied in academic and engineering fields. Here, we introduce the research of atomically thin $MoS_2$ and discuss the research directions.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.488.2-488.2
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• 2014

Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.179.2-179.2
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• 2014

Carbon nanotubes (CNT)-metal contacts play an important role in nanoelectronics applications such as field-effect transistor (FET) devices. Using Al and (10,0) CNT, we have recently showed that the CNT-metal contacts mediated via topological defects within CNT exhibits intrinsically low contact resistance, thanks to the preservation of the sp2 bonding network at the metal-CNT contacts.[1] It is well-established that metals with good wetting property such as Pd consistently yield good contacts to both metallic and semiconducting CNTs. In this work, the electronic and charge transport properties of the interfaces between capped CNT and Pd will be investigated based on first-principles computations and compared with previous results obtained for the Al electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.474-474
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• 2011

Graphene is considered as a potential candidate for the key material in the ideal 2D nanoelectronics. Recently, it is reported that graphene has an interesting sensitivity to molecular adsorption on it. Such properties are believed to be enhanced by the existence of disorders and ripples inside graphene as well as by the interaction with the substrate underneath. Here, we report the effect of introducing structural disorders to the graphene on its electrical properties such as conductance, transconductance, low frequency noise, which can be successfully described by a simple model of the continuum percolation. In addition, the response of the graphene device to gaseous molecular adsorption was systematically investigated and the results were discussed along with the change in Raman spectra.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1049-1052
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• 2007

Extremely sharp and uniform Transfer Mold FEAs with thin film low work function TiN emitter material have been fabricated by controlling the thickness of the coated emitter materials to realize high efficient, high reliable and low-cost vacuum nanoelectronic devices..Their tip radii are 8.3-13.8 nm. Turn-on electric fields of the Ni FEAs and TiN-FEAs resulted in the low electric field values of $31.6\;V/{\mu}m$ and $44.2V/{\mu}m$,respectively, at the short emitter/anode distance: less than $30\;{\mu}m$, which are lower than those of conventional FE As such as Spindt type FEAs and carbon nan otube FEAs The Transfer Metal Mold fabrication method is one of the best methods of changing emit ter materials with sharp and uniform emit ter shapes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.261.1-261.1
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• 2013

Well-aligned nanowire arrays can be used as building blocks for nanoscale device. Recently, we reported that well-aligned single-crystal organic nanowires has been created by using a direct printing method which is named liquid-bridge mediated nanotransfer molding (LB-nTM). Moreover, multi-layering nanostructures can be fabricated by repeating this printing process. As a result, it is possible to make simple and basic concept of heterojunction devices such as crossed nanowire devices. We fabricated crossed single-crystal organic nanowires nanojunction devices from 6,13-bis (triisopropylsilylethynyl) pentacene (TIPS-PEN) and fullerene (C60) single-crystal nanowires using by direct printing method in solution process. Crossed TIPSPEN/ C60 single-crystal nanowires diode has rectifying behavior with on/off ratios of ~13. In addition, the device shows photodiode characteristics as well as rectification. Our study represent methodology of heterojunction devices using single-crystal nanowires, thereby provide a new direction of future nanoelectronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.