• Journal of Korea Society of Industrial Information Systems
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• v.20 no.5
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• pp.107-115
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• 2015

Residential building owners are turning toward renovating their existing buildings to improve old and inefficient HVAC systems. Due to the renovation, much of the added costs will inevitably be passed on to tenants by increasing rent rates. This increment often increases the vacancy rate in the buildings. To balance the interests of both owners and tenants, this paper suggested a method to determine an appropriate rental rate increment for the HVAC system renovation. A case study on residential buildings was conducted to determine a balanced point where the rental rate increment that offsets the amount tenants are willing to pay for the renovation. To calculate all costs incurred by the renovation, life-cycle cost analysis was carried out. Therefore, this paper ultimately provides a threshold value of rental rate increment such that building owners can make a reasonable decision on the HVAC system renovation.

• Journal of the Korean Regional Science Association
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• v.34 no.1
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• pp.61-75
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• 2018

The study on urban regeneration began in 2006 and has actively proceeded for 10 years. Also, there are a lot of studies related to urban regeneration have analyzed urban regeneration effects but have just focused on qualitative analysis. Therefore, this study has intended to analyze the urban regeneration effects of Junang-Dong, a central business district in Cheong City, where urban regeneration projects have been undertaking, in the manner of quantitative analysis. To reach this objective, we selected such indicators as floating population, public land price, a and vacancy rate, and set analysis time span from 2011 to 2016, when urban regeneration projects have been actively operated. As a result, this study has found the following results. 1) As for floating population, population index grew gradually and showed an drastic increase of about 65 percent in 2014 when the project was active. 2) Public land price of Jungang-Dong has been showed the greatest increase from 2011 to 2012 when the city started to regenerate, and slight decrease from 2015 to 2016 with the gradual decrease until 2015. 3) In terms of vacancy rate, there has been declined about 15 percent from 27 percent to 12 percent, with a steady downward curve. This study has dedicated itself to analyzing the urban regeneration effects quantitatively especially in commercial business district.

• Corrosion Science and Technology
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• v.15 no.3
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• pp.129-134
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• 2016

The effects of Ti on the high temperature oxidation of Ni-based superalloys were investigated by cyclic oxidation at $850^{\circ}C$ and $1000^{\circ}C$. The oxide scale formed at $850^{\circ}C$ consists of $Cr_2O_3$, $Al_2O_3$, and $NiCr_2O_4$ layers, while a continuous $Al_2O_3$ layer was formed at $1000^{\circ}C$. The oxidation rate of the alloy with higher Ti content was higher than the alloy with less Ti content at $850^{\circ}C$, possibly due to the increase in the metal vacancy concentration in the $Cr_2O_3$ layer involved by incorporation of $Ti^{4+}$. However, Ti improved the oxidation resistance of the superalloy at $1000^{\circ}C$ by reducing oxygen vacancy concentration in $Al_2O_3$ layer.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.315-319
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• 2014

In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage ($V_{TH}$) under illumination with/without the gate bias, and the amount of shift in $V_{TH}$ is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in $V_{TH}$ under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.

• Nuclear Engineering and Technology
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• v.17 no.2
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• pp.116-128
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• 1985

Considering vacancy generation and migration in grain and sink at grain boundary, a mechanistic densification model which is dependent on UO$_2$ temperature and microstructure has been developed. This densification model is a function of time, fission rate, temperature, density, pore size distribution and grain size. The resultant equation derived in this model which is different from Assmann and Stehle's resultant equations for four temperature regions, can be applied directly for all the pellet temperatures. The predictions of the present densification model very well agreed with the experimental data. This model well predicts absolute magnitude and trend in comparison with the empirical algorithm used in KFEDA code.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.146-146
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• 2000

We have studied the etching of Si(100)-2xl by Cl and Br, using scanning tunneling microscopy to obtain morphological information that can be related to reaction and desorption pathways. Clean surfaces were exposed to molecular halogens at room temperature to produce well-defined chemisorption structures for coverages in the range 0.2-1.0 ML. Heating to 750-750 K induced etching by thermal desorpton. Analysis of the halogen concentration before and after heating indicated that the rates of desorption for SICl2 or SiBr2 were greatest for intermediate coverages and that etching was suppressed as saturation was reached. Hence, desorption is not simply proportional to the concentration of species that can form adsorbed precursors SiX2(a). Instead, it is directly coupled to the creation of monomer vacancies adjacent to the SiX2 (a) unit because this increases the lifetime of the excited state and increases the likelihood of its desorption. Increasing the surface concentration of halogens reduces the rate of vacancy formation. We show that these rates are also affected by a re-dimerization process in the high temperature Br-stabilized Si(100)-3xl reconstruction that increases the likelihood of siBr2(a) formation and enhances its desorption. I will also discuss recent result for F etching on Si(100)-2xl.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.9
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• pp.1306-1313
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• 2004

This paper addresses a theoretical approach to calculate the amount of the stored energy during high strain-rate deformations using atomistic level simulation. The dynamic behavior of materials at high strain-rate deformation are of great interest. At high strain-rates deformations, materials generate heat due to plastic work and the temperature rise can be significant, affecting various properties of the material. It is well known that a small percent of the energy input is stored in the material, and most of input energy is converted into heat. However, microscopic analysis has not been completed without construction of a material model, which can simulate the movement of dislocations and vacancies. A major cause of the temperature rise within materials is traditionally credited to dislocations, vacancies and other defects. In this study, an atomistic material model for FCC such as copper is used to calculate the stored energy.

• Journal of the Korean housing association
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• v.11 no.4
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• pp.53-63
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• 2000

The study focuses on the problems of store space supply in apartment sites and suggests policy directions for the problem. Based on the results of field survey and site reconnaissance, this study identifies following problems and policy directions. First, the stores do not meet consumers various demand due to item limitations with small size. Consequently, there are many closed and/or unsold stores with high vacancy rates, Second, there is a tendency that the closed store rate becomes higher as apartment size becomes smaller. We suggest some law and regulation amendment that make store supply optional rather than mandatory in the case of small apartment site construction.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.7-11
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• 2019

We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H₂ flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10^-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.