• Journal of the Semiconductor & Display Technology
• /
• v.10 no.2
• /
• pp.45-48
• /
• 2011

In this paper, vacancy clustering formation and diffusion of germanium substrate was studied. The analysis method was adopted Monte Carlo method. At temperatures higher than melting point, fewer clusters formed, but there was less variation in the number of clusters than at lower temperatures, as the time increased. Equilibrium diffusivities in the clustering region were $10^2$ lower than those of free vacancies in the initial stage of kinetic lattice Monte Carlo simulations. They were expressed according to three temperature regimes: at temperatures above 1,100 K, at temperatures of 1,100-900 K, and at temperatures below 900 K. The effective mean migration energy, 1.1 eV, closely coincided with that of the 1.0-1.2 eV in experiments.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.19.2-19.2
• /
• 2007

• Nuclear Engineering and Technology
• /
• v.50 no.6
• /
• pp.907-914
• /
• 2018

In this article, we conducted molecular dynamics simulations to investigate the effect of applied strain and temperature on irradiation-induced damage in alpha-zirconium. Cascade simulations were performed with primary knock-on atom energies ranging between 1 and 20 KeV, hydrostatic and uniaxial strain values ranging from -2% (compression) to 2% (tensile), and temperatures ranging from 100 to 1000 K. Results demonstrated that the number of defects increased when the displacement cascade proceeded under tensile uniaxial hydrostatic strain. In contrast, compressive strain states tended to decrease the defect production rate as compared with the reference no-strain condition. The proportions of vacancy and interstitial clustering increased by approximately 45% and 55% and 25% and 32% for 2% hydrostatic and uniaxial strain systems, respectively, as compared with the unstrained system, whereas both strain fields resulted in a 15-30% decrease in vacancy and interstitial clustering under compressive conditions. Tensile strains, specifically hydrostatic strain, tended to produce larger sized vacancy and interstitial clusters, whereas compressive strain systems did not significantly affect the size of defect clusters as compared with the reference no-strain condition. The influence of the strain system on radiation damage became more significant at lower temperatures because of less annealing than in higher temperature systems.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2008.05a
• /
• pp.29.1-29.1
• /
• 2008

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.1 no.1
• /
• pp.66-73
• /
• 1991

During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.115-115
• /
• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.1
• /
• pp.21-32
• /
• 1994

$CaF_2$ crystals were grown with various growth rates by Bridgman method, and the electrical properties of these were studied to examine the changes of ionic conductivities with growth rates by AC Impedance Analyzer. As the growth rates were higher, $CaF_2$ crystals were grown to polycrystals from single crystal. And as grain boundaries and various defects were altered, the ionic conductivities were changed dramatically. $YF_3$ added to $CaF_2$ for disorderizing $CaF_2$ structure and improving the number of $F^-$ carriers and vacancies in $CaF_2$ crystals. Then $Ca_{1-x}Y_XF_{2+X}$ crystals were gained. And the ionic conductivities of $Ca_{1-x}Y_XF_{2+X}$ crystals were investigated with $YF_3$ addition. The ionic conductivities of $CaF_2$ and $Ca_{1-x}Y_XF_{2+X}$ crystals with temperatures were compared. In addition, the effects of clusterings and defects on the electrical properties of solid electrolytes were researched.