• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.4 no.1
• /
• pp.21-32
• /
• 1994

$CaF_2$ crystals were grown with various growth rates by Bridgman method, and the electrical properties of these were studied to examine the changes of ionic conductivities with growth rates by AC Impedance Analyzer. As the growth rates were higher, $CaF_2$ crystals were grown to polycrystals from single crystal. And as grain boundaries and various defects were altered, the ionic conductivities were changed dramatically. $YF_3$ added to $CaF_2$ for disorderizing $CaF_2$ structure and improving the number of $F^-$ carriers and vacancies in $CaF_2$ crystals. Then $Ca_{1-x}Y_XF_{2+X}$ crystals were gained. And the ionic conductivities of $Ca_{1-x}Y_XF_{2+X}$ crystals were investigated with $YF_3$ addition. The ionic conductivities of $CaF_2$ and $Ca_{1-x}Y_XF_{2+X}$ crystals with temperatures were compared. In addition, the effects of clusterings and defects on the electrical properties of solid electrolytes were researched.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.94-101
• /
• 2023

Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.

• Korean Chemical Engineering Research
• /
• v.54 no.3
• /
• pp.394-403
• /
• 2016

$H_2$ production by chemical looping is an efficient method to convert hydrocarbon fuel into hydrogen with the simultaneous capture of concentrated $CO_2$. This process involves the use of an iron based oxygen carrier that transfers pure oxygen from oxidizing gases to fuels by alternating reduction and oxidation (redox) reactions. The enhanced reactivities of copper oxide doped iron-based oxygen carrier were reported, however, the fundamental understandings on the interaction between $Fe_2O_3$ and CuO are still lacking. In this study, we studied the effect of dopant of CuO to $Fe_2O_3/ZrO_2$ particle on the morphological changes and the associated reactivity using various methods such as SEM/EDX, XRD, BET, TPR, XPS, and TGA. It was found that copper oxide acted as a chemical promoter that change chemical environment in the iron based oxygen carrier as well as a structural promoter which inhibit the agglomeration. The enhanced reduction reactivity was mainly ascribed to the increase in concentration of $Fe^{2+}$ on the surface, resulting in formation of charge imbalance and oxygen vacancies. The CuO doped $Fe_2O_3/ZrO_2$ particle also showed the improved reactivity in the steam oxidation compared to $Fe_2O_3/ZrO_2$ particle probably due to acting as a structural promoter inhibiting the agglomeration of iron species.

• Nuclear Engineering and Technology
• /
• v.22 no.4
• /
• pp.337-350
• /
• 1990

A post-irradiation annealing study was conducted with use of reactor pressure vessel(RPV) steel A533B Cl.1 base metal irradiated to a dose of 4.84$\times$10$^{18}$ n/$\textrm{cm}^2$ at about 38$0^{\circ}C$. Microhardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurs in the temperature range of 280-3O5$^{\circ}C$, Michrohardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurrs in the temperature range of 280-305$^{\circ}C$. The variations of Ip, Iw and R parameters indicated that the formation of vacancy clusters by vacancy agglomeration and the annihilation of monovacancies are the first recovery process. The second recovery process occurs in the range of 405-49$0^{\circ}C$ and positron annihilation parameters measured indicated that the dissolution of carbon atoms decorated around vacancy-type defects and possible precipitates, and the annihilation of monovacancies give rise to the second recovery process. It was further indicated that radiation anneal hardening (RAH) in the range of 305-405$^{\circ}C$ between the temperature ranges for the two processes occurs due to the formation of carbon-decorated vacancy clusters and precipitates. The activation energies, orders of reaction and other characteristics of recovery processes were determined by the Meechan-Brinkman method. The activation energy for the first recovery process was determined as 1.76 eV and that for the second recovery process as 2.00eV. These values are lower than those obtained by other workers. This difference may be attributed to the lower copper content of the RPV steel used in the present study. The order of reaction for the first recovery process was determined as 1.78, while that for the second recovery process as 1.67 Non-integer orders of reaction for recovery processes seem to be attributed to the fact that several mechanisms for the first order and the second order of reaction are compounded in one process. This result also supports for the above conclusions from measurements of PA parameters.

• Korean Chemical Engineering Research
• /
• v.59 no.4
• /
• pp.557-564
• /
• 2021

Sr_0.92Y_0.08Ti_1-xV_xO_3-δ (SYTV) with perovskite structure was investigated as an alternative anode to utilize H₂S containing fuels in solid oxide fuel cells. To improve the electrochemical performance of Sr_0.92Y_0.08TiO_3-δ (SYT), vanadium(V) was substituted to titanium(Ti) at the B-site of the SYT perovskites. The SYTV synthesized by the Pechini method was chemically compatible with the YSZ electrolyte without additional by-products formation under the cell fabricating conditions. As increasing V substitution amounts, the oxygen vacancies increased, resulting to increasing ionic conductivity of the anode. The cell performance in pure H₂ at 850 ℃ is 19.30 mW/cm² and 34.87 mW/cm² for a 1 mol.% and 7 mol.% of V substituted anodes, respectively. The cell performance using H₂ fuel containing 1000 ppm of H₂S at 850 ℃ was 23.37 mW/cm² and 73.11 mW/cm² for a 1 mol.% and 7 mol.% of V substituted anodes, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.4
• /
• pp.19-24
• /
• 2020

In this work, the electrical property of Si-doped β-Ga2O3 was investigated via a post-growth annealing process. The Ga2O3 samples were annealed under air (O-rich) or N2 (O-deficient) ambient at 800~1,200℃ for 30 mins. There was no correlation between the crystalline quality and the electrical conductivity of the films within the experimental conditions explored in this work. However, it was observed the air ambient led to severe degradation of the film's electrical conductivity while N2-annealed samples exhibited improvement in both the carrier concentration and Hall mobility measured at room temperature. Interestingly, the x-ray photoemission spectroscopy (XPS) revealed that both annealing conditions resulted in higher concentration of oxygen vacancy (VO). Although it was a slight increase for the air-annealed sample, high resistivity of the film strongly suggests that VO cannot be a shallow donor in β-Ga2O3. Therefore, the enhancement of the electrical conductivity of N2-annealed samples must be originated from something other than VO. One possibility is the activation of Si. The XPS analysis of N2-annealed samples showed increasing relative peak area of Si 2p associated with SiOx with increasing annealing temperature from 800 to 1,200℃. However, it was unclear whether or not this SiOx was responsible for the improvement as the electrical conductivity quickly degraded above 1,000℃ even under N2 ambient. Furthermore, XPS suggested the concentration of Si actually increased near the surface as opposed to the shift of the binding energy of Si from its initial chemical state to SiOx state. This study illustrates the electrical changes induced by a post-growth thermal annealing process can be utilized to probe the chemical and electrical states of vacancies and dopants for better understanding of the electrical property of Si-doped β-Ga2O3.