• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.5
• /
• pp.222-227
• /
• 2002

Recently, the research on artificial retina for the blind is active. In this paper a new optical link method for the retinal prosthesis is proposed. Laser diode system was chosen to transfer image into the eye in this project and the new optical system was designed and evaluated. The use of laser diode array in artificial retina system makes system simple for lack of signal processing part inside of the eyeball. Designed optical system is enough to focus laser diode array on photodiode array in 20$\times$20 application.

• ETRI Journal
• /
• v.26 no.1
• /
• pp.1-6
• /
• 2004

The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and ${\sqrt{T}}$-dependent thermal red shifts. We observed uniform bottom emissions from a 1-kb smart pixel chip of a $32{\times}32$ InGaAs PQR laser array flip-chip bonded to a 0.35 ${\mu}m$ CMOS-based PQR laser driver. The PQR-CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.319-320
• /
• 2007

We researched basic study about electrical characteristics of Zinc Selenide (Faraday Cell), which is known for various temperature of good-performance, that applied measuring current or protecting instrument by Optical Current Transducer, on Gas Insulated Switchgear. Measuring System consists of VCSEL produced 850nm IR Laser, Pin Photo Diode made of GaAs surveyed as Optical Power Meter, and Optical Fibers specified Multi-mode. We observed optical output changes during measurement of currents increasing by 100[A] in range from 0[A] to 1,000[A] and set temperature condition increasing by $5[^{\circ}C]$ in a range from $30[^{\circ}C]\;to\;60[^{\circ}C]$.

• Korean Journal of Optics and Photonics
• /
• v.14 no.1
• /
• pp.92-96
• /
• 2003

Dielectric apertures in vertical cavity laser have been used for improved device performance. Numerical analysis is used to estimate the optical losses as the aperture diameter is reduced. The optical losses depend on the aperture size, thickness and location. The optical loss strongly depend on the aperture size and thickness when the aperture size is similar or smaller than the emitted wavelength. The optical loss is negligible and not depend on the aperture thickness when the aperture size is larger than 5 times emitted wavelength.

• Korean Journal of Optics and Photonics
• /
• v.20 no.6
• /
• pp.339-345
• /
• 2009

The high power and single mode vertical cavity surface emitting laser(VCSEL)s with photonic crystal structures have been proposed and fabricated by reducing substantially the hole numbers used in the photonic crystal structures. It is found that only six holes enable VCSELs to operate a single mode and the reliability can be enhanced by filling the holes with polyimide. The single mode lasing characteristics were analyzed by varying the oxide aperture and the hole diameter in photonic crystal structures. As a result, the single mode lasing can be stably obtained in the photonic crystal vertical cavity surface emitting lasers.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1381-1387
• /
• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.7 s.349
• /
• pp.1-6
• /
• 2006

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.7
• /
• pp.31-36
• /
• 2004

In comparison with in-plane lasers, predicting the output power and differential quantum efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the distributed Bragg reflector(DBR) layers. Therefore, effective cavity model and transfer matrix method have been adapted in order to calculate the output power and differential quantum efficiency The effective cavity model is inappropriate to calculate output power and differential quantum efficiency while it is practically adequate to calculate the threshold gain and threshold current density The reason is that the effective cavity model can not take account of the absorption in GaAs stack layer right below the metal aperture. In this paper, we have compared the threshold current and differential quantum efficiency calculated by using transfer matrix method with effective cavity model and we have made a study of the validity of the effective cavity model. Finally, we have confirmed the versatility of the transfer matrix method with these studies.

• Journal of Convergence for Information Technology
• /
• v.10 no.6
• /
• pp.28-34
• /
• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• Korean Journal of Optics and Photonics
• /
• v.9 no.2
• /
• pp.63-69
• /
• 1998

For detailed characterization of scattering losses occurring in VCSEL's distributed Bragg reflectors, we performed scattering experiment and obtained the information about surface roughness through the analysis of a modified transmission matrix method. The various wafers grown for VCSELs were used for the scattering experiment. The fractal surface assumption and extrapolation is used to estimate the scattered intensity near specular angle. The modified transmission matrix method employed in the analysis considers the scattering loss at each interface and calculates the reflectivity efficiently and easily. As a result, the surface roughness ranges from $4{\AA}$ to $10{\AA}$ The reduction of reflectivity due to the scattering amounts to 0.26% in case of $10{\AA}$ roughness.