• Title/Summary/Keyword: VCSEL

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Design of Core Chip for 3.1Gb/s VCSEL Driver in 0.18㎛ CMOS (0.18㎛ CMOS 3.1Gb/s VCSEL Driver 코아 칩 설계)

  • Yang, Choong-Reol;Lee, Sang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38A no.1
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    • pp.88-95
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    • 2013
  • We propose a novel driver circuit design using $0.18{\mu}m$ CMOS process technology that drives a 1550 nm high-speed VCSEL used in optical transceiver. We report a distinct improvement in bandwidth, voltage gain and eye diagram at 3.1Gb/s data rate in comparison with existing topology. In this paper, the design and layout of a 3.1Gb/s VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed.

MBE Growth and Fabrication of Oxide-Confined VCSEL Array (산화막 구경 표면발광 레이저 어레이의 MBE 성장과 제작)

  • 김진숙;장기수;김종민;배성주;이용탁
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.02a
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    • pp.144-145
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    • 2003
  • VCSEL은 우수한 소자 특성과 표면 발광 구조가 갖는 여러 가지 장점들로 인하여 병렬 광연결과 근거리 광섬유 통신에서 이상적인 광원으로 인정받고 있다. 특히 산화막 구경을 갖는 VCSEL은 이득영역 근처에서 횡 방향으로 광학적, 전기적 제한을 가함으로써 낮은 문턱전류와 높은 전력변환 효율을 갖기 때문에 현재까지 많은 연구가 진행되어 왔다. 본 논문에서는 in-situ 광 반사법을 이용한 VCSEL의 MBE 성장과 1■10 산화막 구경 VCSEL 어레이의 제작공정, 그리고 발진특성에 대하여 논하고자 한다. (중략)

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Development of UV molding Process to Integrate Microlens Array on VCSEL Array for Optical Communication (광통신 용 VCSEL Array상에 Microlens Array를 집적하기 위한 UV성형 공정기술 개발)

  • 한정원;김석민;김홍민;이지승;임지석;강신일
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.840-843
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    • 2004
  • UV molding is a process for integrating micro/nano polymeric optical components on optoelectronic modules. In the present study, a microlens array for vertical cavity surface emitting laser(VCSEL) to fiber coupling was designed, integrated and tested. At the design stage, design variables ware optimized to maximize the coupling efficiency, and tolerance analysis was carried out. At the integration stage, the UV transparent mold was fabricated and the microlens array on VCSEL array was integrated by UV molding process. Finally the coupling efficiency of VCSEL to fiber was measured and analyzed.

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A 4-Channel 6.25-Gb/s/ch VCSEL Driver for HDMI 2.0 Active Optical Cables

  • Hong, Chaerin;Park, Sung Min
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.4
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    • pp.561-567
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    • 2017
  • This paper presents a 4-channel common-cathode VCSEL driver array operating up to 6.25 Gb/s per channel for the applications of HDMI 2.0 active optical cables. The proposed VCSEL driver consists of an input buffer, a modified Cherry-Hooper amplifier as a pre-driver, and a main driver with pre-emphasis to drive a common-cathode VCSEL diode at high-speed full switching operations. Particularly, the input buffer merges a linear equalizer not only to broaden the bandwidth, but to reduce power consumption simultaneously. Measured results of the proposed 4-channel VCSEL driver array implemented in a $0.13-{\mu}m$ CMOS process demonstrate wide and clean eye-diagrams for up to 6.25-Gb/s operation speed with the bias current 2.0 mA and the modulation currents of $3.1mA_{PP}$. Chip core occupies the area of $0.15{\times}0.1{\mu}m^2$ and dissipate 22.8 mW per channel.

A 4-channel 3.125-Gb/s/ch VCSEL driver Array (4-채널 3.125-Gb/s/ch VCSEL 드라이버 어레이)

  • Hong, Chaerin;Park, Sung Min
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.1
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    • pp.33-38
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    • 2017
  • In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.

Design of 850 nm Vertical-Cavity Surface-Emitting Lasers by Using a Transfer Matrix Method (전달 행렬 방법을 이용한 850 nm수직 공진기 레이저 구조의 최적설계)

  • Kim Tae-Yong;Kim Sang-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.1
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    • pp.35-46
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    • 2004
  • In comparison with edge-emitting lasers(EELs), predicting the output power and slope efficiency of Vertical-Cavity Surface-Emitting Lasers(VCSELs) is very difficult due to the absorption loss in DBR layers. However, by using transfer matrix method(TMM), we've made possible to calculate such parameters of multi-layer structures like VCSELs. In this paper, we've calculated the threshold gain, threshold current and slope efficiency through the methodology based on TMM. Also TMM is the way of customizing the VCSEL structure for the desired threshold current and slope efficiency by changing the number of DBR mirror layers.

A High Speed CMOS Arrayed Optical Transmitter for WPON Applications (WPON 응용을 위한 고속 CMOS어레이 광트랜스미터)

  • Yang, Choong-Reol;Lee, Sang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38B no.6
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    • pp.427-434
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    • 2013
  • In this paper, the design and layout of a 2.5 Gbps arrayed VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed. In this paper, a 4 channel 2.5 Gbps VCSEL (vertical cavity surface emitting laser) driver array with automatic optical power control is implemented using $0.18{\mu}m$ CMOS process technology that drives a $1550{\mu}m$ high speed VCSEL used in optical transceiver. To enhance the bandwidth of the optical transmitter, active feedback amplifier with negative capacitance compensation is exploited. We report a distinct improvement in bandwidth, voltage gain and operation stability at 2.5Gbps data rate in comparison with existing topology. The 4-CH chip consumes only 140 mW of DC power at a single 1.8V supply under the maximum modulation and bias currents, and occupies the die area of $850{\mu}m{\times}1,690{\mu}m$ excluding bonding pads.

High Power Single Mode Multi-Oxide Layer VCSEL with Optimized Thicknesses and Aperture Sizes of Oxide Layers

  • Yazdanypoor, Mohammad;Emami, Farzin
    • Journal of the Optical Society of Korea
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    • v.18 no.2
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    • pp.167-173
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    • 2014
  • A novel multi-oxide layer structure for vertical cavity surface emitting laser (VCSEL) structures is proposed to achieve higher single mode output power. The structure has four oxide layers with different aperture sizes and thicknesses. The oxide layer thicknesses are optimized simultaneously to reach the highest single mode output power. A heuristic method is proposed for plotting the influence of these variable changes on the operation of optical output power. A comprehensive optical-electrical thermal-gain self-consistent VCSEL model is used to simulate the continuous-wave operation of the multi-layer oxide VCSELs. A comparison between optimized VCSELs with different structures is presented. The results show that by using multi-oxide layers with different thicknesses, higher single-mode optical output power could be achieved in comparison with multi-oxide layer structures with the same thicknesses.

Fiber Bragg Grating Temperature Sensor by the Wavelength Tuning Using the Temperature Dependence of VCSEL (빅셀(VCSEL)의 온도 의존성을 이용한 파장 가변 형 광섬유 격자 온도센서)

  • Lee, Chung-Ki;Kim, Sung-Moon
    • Korean Journal of Optics and Photonics
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    • v.29 no.6
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    • pp.241-246
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    • 2018
  • In this paper, a low-cost optical temperature sensor is implemented, using a fiber Bragg grating (FBG) as the temperature probe and a low-cost VCSEL with temperature-dependent output wavelength as the light source. To analyze the wavelength of the reflected light from the FBG, an interrogation was applied using a method of referring to the internal temperature according to the output wavelength of the VCSEL. When the temperature of the VCSEL was adjusted from 14 to $52.2^{\circ}C$, the output wavelength varied from 1519.90 to 1524.25 nm. The degree of wavelength tuning according to temperature was $0.114nm/^{\circ}C$. The variable wavelength repeatability error according to temperature was ${\pm}0.003nm$, and the temperature measurement error was ${\pm}0.18^{\circ}C$. As a result of measuring the temperatures from 22.3 to $194.2^{\circ}C$, the value of the internal temperature change of the light source according to the applied temperature ${\Delta}T$ was $0.146^{\circ}C/{\Delta}T$, the change in reflected wavelength of the temperature probe according to applied temperature ${\Delta}T$ was measured at $16.64pm/^{\circ}C$. and the temperature measurement error of the sensor was ${\pm}1^{\circ}C$.