• Title/Summary/Keyword: V60

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Over-Excitation Protection Relaying using the 345kV Power System Modeling Data (345kV 계통 모델링 데이터를 활용한 과여자 보호계전기법)

  • Park, Chul-Won;Ban, Yu-Hyeon
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.60 no.4
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    • pp.175-180
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    • 2011
  • A large AC generator is an important component of the power system. It is a need for research of AC generator protection relay for the next-generation ECMS and an efficient operation of protection control system. However, most of protection and control systems used in power plants have been still imported as turn-key and operated in domestic. This may cause the lack of the correct understanding on the protection systems and methods, and thus have difficulties in optimal operation. In this paper, over-excitation protection relaying is one of the protective factors in generator protection IED was presented. The cause and protection principles were dealt and, DFT-based gain compensation algorithm was adopted for the frequency measurement. The Republic of Korea 345kV modeling data by EMTP-RV was used for performance evaluation.

The Study of Cable Fault Case and the Fault Management System of Electrical Facilities for private use (자외선 영상 이미지 비교를 통한 22.9kV 특고압 설비의 상태진단 연구)

  • Kim, Young-Seok;Shong, Kil-Mok
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2009.10a
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    • pp.211-213
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    • 2009
  • This paper was studied about the ultra-violet rays(UV) image area and discharge quantity of 22.9kV class polymer insulator using UV camera. The UV image area was begun to observe to 60kV that is about 40% of breakdown voltage of polymer insulator and the area was increased by applied voltage. Also, the discharge quantity was increased at 60kV sharply. If the intensity of breakdown passes over about 40% we can know that need the check on the electrical facility.

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A Design of LDO(Low Dropout Regulator) with Enhanced Settling Time and Regulation Property (정착시간과 레귤레이션 특성을 개선한 LDO(Low Dropout Regulator)의 설계)

  • Park, Kyung-Soo;Park, Jea-Gun
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.60 no.3
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    • pp.126-132
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    • 2011
  • A conventional LDO(Low Dropout Regulator) uses one OPAMP and one signal path. This means that OPAMP's DC Gain and Bandwidth can't optimize simultaneously within usable power. This also appears that regulation property and settling time of LDO can't improve at the same time. Based on this idea, a proposed LDO uses two OPAMP and has two signal path. To improve regulation property, OPAMP where is used in the path which qualities DC gain on a large scale, bandwidth designed narrowly. To improve settling time, OPAMP where is used in the path which qualities DC gain small, bandwidth designed widely. A designed LDO used 0.5um 1P2M process and provided 200mA of output current. A line regulation and load regulation is 12.6mV/V, 0.25mV/mA, respectively. And measured settling time is 1.5us in 5V supply voltage.

Embodiment of Low Operating Voltage in Positive Column AC-PDPs

  • Kim, Hyun;Tae, Heung-Sik;Chien, Sung-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.95-98
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    • 2003
  • The positive column discharge characteristics in the long gap (440 ${\mu}m$) are investigated based on the voltage distribution among three electrodes. In particular, the effects of the amplitude and width of the short pulse applied to the address electrode on the positive column discharge characteristics are examined intensively. By proper controlling of the amplitude and width of the address short pulse, it is found that the positive column discharge in the long gap is well constructed. As a result, under the stable static voltage margin condition, the firing and sustaining voltages are as low as those of conventional short gap(60 ${\mu}m$) discharge($V _f=220V$, $V_s=150V$) and the color purity is improved. Moreover, the luminous efficiency increases up to 60% in comparison with the conventional case.

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A Study on the Design and Electrical Characteristics of High Performance Smart Power Device (고성능 Smart Power 소자 설계 및 전기적 특성에 관한 연구)

  • Ku, Yong-Seo
    • Journal of IKEEE
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    • v.7 no.1 s.12
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    • pp.1-8
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    • 2003
  • In this study, the high performance BCD device structure which satisfies the high voltage and fast switching speed characteristics is devised. Through the process and device simulation, optimal process spec. & device spec. are designed. We adapt double buried layer structure, trench isolation process, n-/p-drift region formation and shallow junction technology to optimize an electrical property as mentioned above. This I.C consists of 20V level high voltage bipolar npn/pnp device, 60V level LDMOS device, a few Ampere level VDMOS, 20V level CMOS device and 5V level logic CMOS.

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Individual Differences of the Chewing Speed and Chews per Bolus in Rumination Behaviour of Cattle (소의 반추행동에 있어서 저작속도와 괴움질 식괴당 저작횟수의 개체차)

  • ;Minoru Otha
    • Journal of The Korean Society of Grassland and Forage Science
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    • v.9 no.3
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    • pp.158-162
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    • 1989
  • This experiment was conducted to evaluate individual difference of chewing speed and chews per bolus duing the rumination using twenty three heads of grazing cattle and thirty six heads of barn feeding cattle. Rumination behaviour was measured and recorded by the masster EMC telemeter and visual observation. The chewing speed (chews/lOOsec) was significantly different individually (C.V. 13.0-14.5 %) among the variable aged group (1-60 months), but that of same aged group showed lower difference (C.V. 4.5 %). The chews per bolus showed even larger individually difference than the chewing speed, so the variable aged group (1-60 months) resulted the 15.5-16.2 %of C.V.and the same aged group showed the 9.5 % of C.V. Under 12 month aged cattle showed more rapid chewing speed than older aged cattle. The chewing speed changed with the growth of cattle, but the chews per bolus did not show any relationship with age, so it is regarded as the individually characteristic pattern.

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154kV Main TR. Bay IED Based On IEC 61850 (IEC 61850 기반의 154kV M.Tr Bay IED 적용 사례)

  • Roh, Jae-Keun;Oh, Jae-Hoon;Yang, Hang-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.60 no.11
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    • pp.2028-2034
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    • 2011
  • Substation Automation System (SAS) based on IEC 61850 is becoming more and more reality in applying power systems. As well, the development of various engineering tools and the convergence with diagnostic systems are underway. To reflect recent advancements in SAS technology, the Korea Electric Power Corporation initiated a 154kV SAS pilot project and a smart power grid business in 2010. In this paper, the authors will summarize the overview and the lessons learned in applying the IEC 61850-based 154kV Main transformer bay IED solutions to these two project.

Characteristic Analysis of PD Occurrence Aspects for Defect of Stator Coil in HV Induction motor (고압 유도전동기 고정자권선의 결함에 따른 부분방전발생양상의 특징분석)

  • Lee, Kang-Won;Kim, Myung-Yong;Baik, Kwang-Sun;Jang, Dong-Uk;Lim, Kee-Joe
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2226-2228
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    • 2005
  • High voltage induction motor is the important equipment for ensuring the driving performance of the electric train. PD(partial discharge) is a good indicator for showing the insulation performance of stator coil in HV induction motor. This paper has investigated the characteristics of PD occurrence aspects for both the sound and defective stator coil which consist of maximum PD amplitude(V), total occurrence number, average PD amplitude(V) and PD amplitude(v) - PD occurrence number(n). They were compared with each other depending on applied voltages and reconstructed to $60{\times}60$ matrices of PD amplitude(v)-occurrence phase (${\phi}$)-occurrence number(n) which is the good way to estimate the PD sources in stator coil.

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Fabrication and Characteristics of ultra power-saving Schottky barrier rectifier (초절전형 Schottky barrier rectifier의 제조 및 그 특성)

  • Kim, Jun-Sik;Choe, Yeong-Ho;Park, Geun-Yeong;Choe, Si-Yeong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.4
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    • pp.35-40
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    • 2002
  • Ultra-power-saving SBR has been fabricated by using vanadium and molybdenum with low work function. Because reverse leakage current is increased in inverse proportion to work function, we implanted argon ion on the n-Si layer for decreasing leakage current. The dose and acceleration energy of the argon implantation in the silicon was 1$\times$10$^{14}$ ion/$\textrm{cm}^2$, 40 keV, respectively. The forward voltages drop of fabricated V-SBR and Mo-SBR were 0.25 V and 0.39 V at the same forward current density of 60 A/$\textrm{cm}^2$. As a result, it was found that the reverse leakage current of the fabricated V-SBR was reduced over 20$mutextrm{A}$ by the argon implantation in comparison with the no implanted V-SBR. Also, owing to argon implantation, the inferiority of characteristic of the SBR was not detected.