• Title/Summary/Keyword: V2V communications

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A Wideband ${\Delta}{\Sigma}$ Frequency Synthesizer for T-DMB/DAB/FM Applications in $0.13{\mu}m$ CMOS (T-DMB/DAB/FM 수신기를 위한 광대역 델타시그마 분수분주형 주파수합성기)

  • Shin, Jae-Wook;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.12
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    • pp.75-82
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    • 2010
  • This paper presents a wideband ${\Delta}{\Sigma}$ fractional-N frequency synthesizer for a multi-band single chip CMOS RFIC transceivers. A wideband VCO utilizes a 6-bit switched capacitor array bank for 2340~3940 MHz frequency range. VCO frequency calibration circuit is designed for optimal capacitor bank code selection before phase locking process. It finishes the calibration process in $2{\mu}s$ over the whole frequency band. The LO generation block has selectable multiple division ratios of ${\div}2$, ${\div}16$, and ${\div}32$ to generate LO I/Q signals for T-DMB/DAB/FM Radio systems in L-Band (1173~1973 MHz), VHF-III (147~246 MHz), VFH-II (74~123 MHz), respectively. The measured integrated phase noise is quite low as it is lower than 0.8 degree RMS over the whole frequency band. Total locking time of the ${\Delta}{\Sigma}$ frequency synthesizer including VCO frequency calibration time is less than $50{\mu}s$. The wideband ${\Delta}{\Sigma}$ fractional-N frequency synthesizer is fabricated in $0.13{\mu}m$ CMOS technology, and it consumes 15.8 mA from 1.2 V DC supply.

Fabrication of Large Area Transmission Electro-Absorption Modulator with High Uniformity Backside Etching

  • Lee, Soo Kyung;Na, Byung Hoon;Choi, Hee Ju;Ju, Gun Wu;Jeon, Jin Myeong;Cho, Yong Chul;Park, Yong Hwa;Park, Chang Young;Lee, Yong Tak
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.220-220
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    • 2013
  • Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

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Efficient Symbol Detection Algorithm for Space-frequency OFDM Transmit Diversity Scheme (공간-주파수 OFDM 전송 다이버시티 기법을 위한 효율적인 심볼 검출 알고리즘)

  • Jung Yun ho;Kim Jae seok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.4C
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    • pp.283-289
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    • 2005
  • In this paper, we propose two efficient symbol detection algorithms for space-frequency OFDM (SF-OFDM) transmit diversity scheme. When the number of sub-carriers in SF-OFBM scheme is small, the interference between adjacent sub-carriers may be generated. The proposed algorithms eliminate this interference in a parallel or sequential manlier and achieve a considerable performance improvement over the conventional detection algorithm. The bit error rate (BER) performance of the proposed detection algorithms is evaluated by the simulation. In the case of 2 transmit and 2 receive antennas, at $BER=10^{-4}$ the proposed algorithms achieve the gain improvement of about 3 dB. The symbol detectors with the proposed algorithms are designed in a hardware description language and synthesized to gate-level circuits with the $0.18{\mu}m$ 1.8V CMOS standard cell library. With the division-free architecture, the proposed SF-OFDM-PIC and SF-OFDM-SIC symbol detectors can be implemented using 140k and 129k logic gates, respectively.

Wireless Power Harvesting Techniques to Improve Time to Fly of Drone (무인항공기 비행시간 향상을 위한 무선 전력획득 기술)

  • Nam, Kyu-hyun;Jung, Won-jae;Jang, Jong-eun;Chae, Hyung-il;Park, Jun-seok
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.41 no.11
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    • pp.1574-1579
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    • 2016
  • This paper presents a self-powered sensor-node scheme using a RF wireless power harvesting techniques for improve drone time of flight. Sensor-node that is proposed is turned when two conditions satisfy: The one is input RF ID data from master-node should be same with sensor-node's ID, and the other one is RF wireless power harvesting system is turned on by hysteresis switch. In this paper, master-node's output is 26 dBm at 263 MHz. Maximum RF to DC power conversion efficiency is about 55% at 4-6 dBm input power condition (2 meter from master-node). The maximum RF wireless power harvesting range is about 13 meter form master-node. And power consumption of the sensor-node's load elements such as transmitter, MCU and temperature sensors is approximately average 15 mA at 5.0 V for 10 msec.

Output Noise Reduction Technique Based on Frequency Hopping in a DC-DC Converter for BLE Applications

  • Park, Ju-Hyun;Kim, Sung Jin;Lee, Joo Young;Park, Sang Hyeon;Lee, Ju Ri;Kim, Sang Yun;Kim, Hong Jin;Lee, Kang-Yoon
    • IEIE Transactions on Smart Processing and Computing
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    • v.4 no.5
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    • pp.371-378
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    • 2015
  • In this paper, a different type of pulse width modulation (PWM) control scheme for a buck converter is introduced. The proposed buck converter uses PWM with frequency hopping and a low quiescent.current low dropout (LDO) voltage regulator with a power supply rejection ratio enhancer to reduce high spurs, harmonics and output voltage ripples. The low quiescent.current LDO voltage regulator is not described in this paper. A three-bit binary-to-thermometer decoder scheme and voltage ripple controller (VRC) is implemented to achieve low voltage ripple less than 3mV to increase the efficiency of the buck converter. An internal clock that is synchronized to the internal switching frequency is used to set the hopping rate. A center frequency of 2.5MHz was chosen because of the bluetooth low energy (BLE) application. This proposed DC-DC buck converter is available for low-current noise-sensitive loads such as BLE and radio frequency loads in portable communications devices. Thus, a high-efficiency and low-voltage ripple is required. This results in a less than 2% drop in the regulator's efficiency, and a less than 3mV voltage ripple, with -26 dBm peak spur reduction operating in the buck converter.

Design and Implementation of an L-Band Single-Sideband Mixer with CMOS Switches and C-Band CMOS QVCO (CMOS 스위치부를 갖는 L-대역 단측파대역 주파수 혼합기 및 C-대역 QVCO 설계 및 제작)

  • Lee, Jung-Woo;Kim, Nam-Yoon;Kim, Chang-Woo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39A no.12
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    • pp.691-698
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    • 2014
  • An L-band single side band(SSB) mixer with CMOS switches and a C-band quadrature voltage-controlled oscillator(QVCO) have been developed using the TowerJazz 0.18-um RFCMOS process. The SSB mixer exhibits a conversion gain of 6.6 ~ 7.5 dB with a 70-dBc image rejection ratio and 65-dBc port isolation. The oscillation frequency range of the QVCO is 6.2 ~ 6.7 GHz with an output power of 4~6 dBm. For measurement, 1.8 V supply voltage is used while drawing 36 mA for the mixer and 23 mA for the QVCO.

Design and Implementation of a Frequency Tunable Bandpass Filter for TVWS (TVWS용 주파수가변 대역통과필터의 설계 및 구현)

  • Kang, Sanggee
    • Journal of Satellite, Information and Communications
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    • v.11 no.4
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    • pp.44-47
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    • 2016
  • In these days, interest of systems and services using TVWS(TV White Space) are increased, communication systems and services for TVWS have been actively studied. The unoccupied frequency in TVWS is different according to the geographical location and the time of day. RF systems having a frequency tunable bandpass filter operated in TVWS could be efficiently used. In this paper, a frequency tunable bandpass filter operated in 470 ~ 698MHz is designed and implemented. In consideration of simple control and physical size, the tunable bandpass filter is designed with 2-pole. The implemented tunable bandpass filter has the operating frequency band of 470 ~ 698MHz with control voltages of 1.58 ~ 3.93V, the insertion loss of maximum 4.78dB and the return loss of below 10dB. The implemented frequency tunable bandpass filter can be directly used in the RF receiver for TVWS and the design procedures could be used for developing a high power tunable bandpass filter as the basic research data.

Design & Fabrication of a Broadband SiGe HBT Variable Gain Amplifier using a Feedforward Configuration (Feedforward 구조를 이용한 광대역 SiGe HBT 가변 이득 증폭키의 설계 및 제작)

  • Chae, Kyu-Sung;Kim, Chang-Woo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.5A
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    • pp.497-502
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    • 2007
  • Broadband monolithic SiGe HBT variable gain amplifier with a feedforward configuration have been newly developed to improve bandwidth and dB-linearly controlled gain characteristics. The VGA has been implemented in a $0.35-{\mu}m$ BiCMOS process. The VGA achieves a dynamic gain-control range of 19.6 dB and a 3-dB bandwidth of 4 GHz ($4{\sim}8\;GHz$) with the control-voltage range from 0.6 to 2.6 V. The VGA produces a maximum gain of 9.3 dB at 6 GHz and a output power of -3 dBm at 8 GHz.

Estimation of Predictive Travel Times Using Ubiquitous Traffic Environment under Incident Conditions (유비쿼터스 환경에서 돌발상황 발생 시 예측적 통행시간 추정기법)

  • Park, Joon-Hyeong;Hong, Seung-Pyo;Oh, Cheol;Kim, Tae-Hyeong;Kim, Won-Kyu
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.8 no.2
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    • pp.14-26
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    • 2009
  • This study presented a novel method to estimate travel times under incident conditions. Predictive travel time information was defined and evaluated with the proposed method. The proposed method utilized individual vehicle speeds obtained from global positioning systems (GPS) and inter-vehicle communications(IVC) for more reliable real-time travel times. Individual vehicle trajectory data were extracted from microscopic traffic simulations using AIMSUN. Market penetration rates (MPR) and IVC ranges were explored with the accuracy of travel times. Relationship among travel time accuracy, IVC ranges, and MPR were further identified using regression analyses. The outcomes of this study would be useful to derive functional requirements associated with traffic information systems under forthcoming ubiquitous transportation environment

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Wide-band design of X-cut $LiNbO_{3}$ optcal modulator employing a ridge waveguide (Ridge형 도파로구조 X-cut $LiNbO_3$ 광변조기의 광대역 설계)

  • Huh, Hyun;Kim, Hee-Ju;Pan, Jae-Kyung
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.1
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    • pp.89-95
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    • 1997
  • X-cut y-propagation $LiNbO_{3}$ optical modulator is analyzed by finite element calculation. the purpose of this trial is the design of wide-bandwidth x-cut $LiNbO_{3}$ optical modulator with ridge wave guide, which was only applied to z-cut $LiNbO_{3}$ optical modulator. the simulation tool is examined by the comparison between our results and Becker's. And we consider the optimum position of optical waveguide to electrodes for decreasing the driving voltage. The calculated driving-voltage, characteristic impedance and microwave effective index at $1.3{\mu}{\textrm{m}}$ optical wavelength are 18 V.cm, $48.13{\Omega}$ and 2.168, respectively.

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