• 분석과학
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• 제11권1호
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• pp.8-12
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• 1998

2,2'-Biimidazole은 glycol과 ammonium 용액을 반응하여 합성하였다. 2,2'-biimidazole의 정확한 화학적 구조는 trans ($C_{2h}$) 또는 cis ($C_{2v}$)형 중 하나로 발표되었다. 본 실험은 2,2'-biimidazole의 화학 구조를 규명하기 위하여 FTIR과 Raman Spectrum의 서로 상호보완작용을 이용하여 분석하였으며, 그 외 $^1H$, $^{13}C$ NMR, computer molecular modeling도 사용하였다. 2,2'-biimidazole의 구조는 FTIR과 Raman 스펙트럼을 비교 분석한 결과 cis ($C_{2v}$) 보다는 trans ($C_{2h}$)로 판명되었다. 이 결과는 computer molecular modeling과 X-ray crystallography의 실험 결과와 일치한다. 본 연구는 pyridine nitrogen을 함유한 chelating 성질을 지닌 2,2'-biimidazole의 구조 규명에 좋은 증거로 사료된다.

• Korean Journal of Mathematics
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• 제5권2호
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• pp.185-193
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• 1997

In this paper, we study the $BP_*$-module structure of $BP_*$(BG) mod $(p,v_1,{\cdots})^2$ for non abelian groups of the order $p^3$. We know $grBP_*(BG)=BP_*{\otimes}H(H_*(BG);Q_1){\oplus}BP^*/(p,v_1){\otimes}ImQ_1$. The similar fact occurs for $BP_*$-homology $grBP_*(BG)=BP_*s^{-1}H(H_*(BG);Q_1){\oplus}BP_*/(p,v)s^{-1}H^{odd}(BG)$ by using the spectral sequence $E^{*,*}_2=Ext_{BP^*}(BP_*(BG),BP^*){\Rightarrow}BP^*(BG)$.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.611-614
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• 2007

The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.

• Bulletin of the Korean Chemical Society
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• 제34권12호
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• pp.3641-3648
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• 2013

Energy transfer and bond dissociation of $C-H_{methyl}$ and $C-H_{ring}$ in excited toluene in the collision with $H_2$ and $D_2$ have been studied by use of classical trajectory procedures at 300 K. Energy lost by the vibrationally excited toluene to the ground-state $H_2/D_2$ is not large, but the amount increases with increasing vibrational excitation from 5000 and $40,000cm^{-1}$. The principal energy transfer pathway is vibration to translation (V-T) in both systems. The vibration to vibration (V-V) step is important in toluene + $D_2$, but plays a minor role in toluene + $H_2$. When the incident molecule is also vibrationally excited, toluene loses energy to $D_2$, whereas it gains energy from $H_2$ instead. The overall extent of energy loss is greater in toluene + $D_2$ than that in toluene + $H_2$. The different efficiency of the energy transfer pathways in two collisions is mainly due to the near-resonant condition between $D_2$ and C-H vibrations. Collision-induced dissociation of $C-H_{methyl}$ and $C-H_{ring}$ bonds occurs when highly excited toluene ($55,000-70,400cm^{-1}$) interacts with the ground-state $H_2/D_2$. Dissociation probabilities are low ($10^{-5}{\sim}10^{-2}$) but increase exponentially with rising vibrational excitation. Intramolecular energy flow between the excited C-H bonds occurring on a subpicosecond timescale is responsible for the bond dissociation.

• 대한화학회지
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• 제37권10호
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• pp.874-880
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• 1993

산소를 수용체로 하여 $H_2O_2$를 생성하는 산화효소인 glucose oxidase (GO) 와 alcohol oxidase (AO)를 이용하여 glucose와 ethanol에 대한 분광학적 효소분석법과 전기화학적 효소분석법을 연구하였다. Glucose에 대한 정량분석의 경우 GO 반응에서 생성된 $H_2O_2$를 peroxidase를 사용하여 $K_4Fe(CN)_6$에 반응시키고 그 결과 생성된 $K_3Fe(CN)_6$의 흡광도를 418 nm에서 측정하거나 Ag/AgCl (포화 KCl) 기준전극에 대하여 -55 mV를 부하시킨 유리질 탄소전극에서 $K_3Fe(CN)_6$의 확산전류를 측정하였다. 전류법 측정이 분광광도법 측정보다 1/1000 정도 더 낮은 농도까지 검출할 수 있었으며 직선성을 갖는 농도 범위도 10배 더 연장되었다. Ethanol에 대한 정량분석의 경우 $K_3Fe(CN)_6$가 AO에 의하여 순간적으로 소거되었으므로 AO 반응만을 이용하여 $H_2O_2$의 생성속도를 +0.900 V에서 측정하거나 용존 $O_2$의 감소속도를 -0.500 V에서 전류법으로 측정하였다.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.155-160
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• 2020

Ga₂O₃/n-type 4H-SiC heterojunction diodes were fabricated by RF magnetron sputtering. The optical properties of Ga₂O₃ and electrical properties of diodes were investigated. I-V characteristics were compared with simulation data from the Atlas software. The band gap of Ga₂O₃ was changed from 5.01 eV to 4.88 eV through oxygen annealing. The doping concentration of Ga₂O₃ was extracted from C-V characteristics. The annealed oxygen exhibited twice higher doping concentration. The annealed diodes showed improved turn-on voltage (0.99 V) and lower leakage current (3 pA). Furthermore, the oxygen-annealed diodes exhibited a temperature cross-point when temperature increased, and its ideality factor was lower than that of as-grown diodes.

• 전기학회논문지
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• 제56권1호
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• pp.112-116
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• 2007

We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.

• 한국미생물·생명공학회지
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• 제21권5호
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• pp.435-439
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• 1993

For the overproduction of glutathione, Candida sp. mutant was isolated by the treatment with U.V. light. The highest glutathione production of Candida sp. mutant was obtained after shaking culture for 48 hours in the cullture medium containing glucose 1.5%(w/v), yeast extract 4.0% (w/v), KH2PO4 0.04%(w/v), biotin 5 ng/ml, and L-cysteine 0.04%(w/v). The optimal pH and temperature for the glutathione production were pH 6.0 and 25C, respectively.

• 천문학회보
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• 제41권2호
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• pp.40.1-40.1
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• 2016

We present the far-ultraviolet fluorescent molecular hydrogen ($H_2$) emission map observed with FIMS/SPEAR for ~76% of the sky. The fluorescent $H_2$ emission is found to be saturated by strong dust extinction at the optically thick, Galactic plane region. However, the extinction-corrected intensity of fluorescent $H_2$ emission is found to have strong linear correlations with the well-known tracers of the cold interstellar medium, such as the E(B-V) color excess, neutral hydrogen column density N(HI), $H{\alpha}$ emission, and CO $J=1{\rightarrow}0$ emission. The all-sky molecular hydrogen column density map is also obtained using a photodissociation region model. We also derive the gas-to-dust ratio, hydrogen molecular fraction ($f_{H2}$), and $CO-to-H_2$ conversion factor ($X_{CO}$) of the diffuse interstellar medium. The gas-to-dust ratio is consistent with the standard value $5.8{\times}10^{21}atoms\;cm^{-2}mag^{-1}$, and the $X_{CO}$ tends to increase with E(B-V), but converges to the Galactic mean value $1.8{\times}10^{20}cm^{-2}K^{-1}km^{-1}s$ at optically thick regions with E(B-V)>2.0.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.