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Purification and Characterization of Collagenase Produced by Staphylococcus aureus JJ-11 Isolated from the Human Skin (피부에서 분리한 Staphylococcus aureus JJ-11이 생산하는 collagenase의 정제 및 특성)

  • Lee Jin-Kyoung;Kim Hae-Nam;Kang Ho-Young;Jun Hong-Ki
    • Journal of Life Science
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    • v.16 no.2 s.75
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    • pp.245-252
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    • 2006
  • A bacterial strain, identified as Staphylococcus aureus JJ-11, producing collagenase was isolated out of 40 persons having skin troubles. S. aureus JJ-11 produced collagenase optimally in the media containing 1.5%(w/v) gelatin, 1%(w/v) yeast extract, 0.4%(w/v) $K_2HPO_4$, 0.005%(w/v) $NiSO_4{\cdot}6H_2O$ at $37^{\circ}C$ for 18 hrs. The collagenase produced by Staphylococcus aureus JJ-11 was purified at 6.66-folds purity through application of chromatography with Amberlite IRA-900 and Sephacryl S-300 HR columns. The molecular weight of the partially purified enzyme was estimated to be 62 kDa by SDS-PAGE. The protein exhibited optimum enzymatic activity at pH 7.0, and showed a stable activity at pH 4-8. The optimum temperature for collagenase was at $37^{\circ}C$, and activity was maintained upto $40^{\circ}C$. The enzyme activity was slightly elevated in the presence of divalents such as, $Fe^{2+},\;Co^{2+}\;and\;Ba^{2+}$ However, the activity was inhibited in the presence of $Sr^{2+}\;or\;Hg^{2+}$. The inhibition of activity by O-phenanthroline and EDTA suggested that the enzyme may contain metal which is required for activity. The enzyme showed the highest activity when insoluble collagen (type I) was, used as a substrate.

Electrophotographic properties of $\tau$-H$_2$Pc/oxadiazole photoreceptor (I) ($\tau$-H$_2$PC/oxadiazole 유기이층막의 감광특성 연구 (I))

  • 이덕출;박구범;조기선;오승현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.141-143
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    • 1993
  • A nontoxic organic photoreceptor for near infrared light has been developed. A double layered photoreceptor using $\tau$-H$_2$Pc as the CGL was made. The CTL was formed by oxadiazole derivative dispersed in two other host polymers. This photoreceptor has a charge acceptance of -900 V when a corona charge is used, and has residual potentials of -20 V for PC, and -10 V for PVB by light irradiation.

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Surface Morphology of PEO-treated Ti-6Al-4V Alloy after Anodic Titanium Oxide Treatment (ATO 처리후, 플라즈마 전해 산화 처리된 Ti-6Al-4V 합금의 표면 형태)

  • Kim, Seung-Pyo;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.75-75
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    • 2018
  • Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

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Kinetics and Mechanism of the Hydrolysis of Diazidophenylmethane Derivatives (Diazidophenylmethane 유도체들의 가수분해반응 메카니즘에 대한 반응속도론적 연구)

  • Kwon, Ki Sung;Seo, Jee Hyung;Lee, Yong Gu
    • Journal of the Korean Chemical Society
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    • v.41 no.6
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    • pp.313-319
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    • 1997
  • Diazidophenylmethane derivatives(X: p-H, $p-OCH_3,\;p-F,\;p-CH_3$) were synthesized and the rate constants of hydrolysis of diazidophenylmethane derivatives were determined by UV spectrophotometry in 50:50(v/v) aqueous methanol at 25$^{\circ}C$. On the basis of rate equation, substituent effect, activation parameters, solvent effect, salt effect, and product analysis, it may be concluded that the hydrolysis of diazidophenylmethane derivatives proceed through $S_N2_CA$ mechanism below pH 2.0, while above pH 12.0 through $S_N2$ mechanism, and in the range of pH from 2 to 12 through $S_N1$ mechanism respectively.

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NUMERICAL SIMULATION OF FLOW AND HEAT TRANSFER IN A COOLING CHANNEL WITH STAGGERED V-SHAPED RIBS (엇갈린 V-형 리브가 부착된 냉각유로에서의 열유동 수치해석)

  • Myong, H.K.;Kim, K.Y.
    • Journal of computational fluids engineering
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    • v.13 no.4
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    • pp.107-113
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    • 2008
  • The present study numerically simulates the flow and heat transfer characteristics of rib-induced secondary flow in a square cooling channel with staggered V-shaped ribs, extruded on both walls. The rib pitch-to-height ratio (p/h) varies from 2.8 to 10 with the rib-height-to-hydraulic diameter ration (h/$D_h$)of 0.07 and the Reynolds number of 50,000. Shear stress transport (SST) turbulence model is used as a turbulence model. Computational results show that complex secondary flow patterns are generated in the channel due to the snaking flow in the streamwise direction for all tested cases. In the range of p/h=5 to 10 the staggered V-shaped rib gives about 3 times higher heat transfer augmentation than the reference smooth pipe with high heat transfer on both front side and the area around the leading edge of the ribs, while the former cases give about 18 times higher streamwise pressure drop than the latter ones. However, for the thermal performances, based on the equal pumping power condition, the case of p/h=2.8 gives the best result among three cases, mainly due to relatively low streamwise pressure drop, although it gives relatively low heat transfer augmentation.

Enhancing hydrogen evolution activity of MoS2 basal plane by substitutional doping and strain engineering

  • Kim, Byeong-Hun;Lee, Byeong-Ju
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.280-284
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    • 2016
  • 본 연구에서는 Density functional theory(DFT) 계산을 이용하여, $MoS_2$의 Mo와 S를 다른 원자로 치환 했을 때 $2H-MoS_2$ monolayer의 basal plane에서 HER활성을 향상시켰다. 특히 Ge와 Rh를 치환한 경우, ${\Delta}G_H$가 각각 0.03eV, 0,07eV로 최적에 가까운 HER활성이 나타났다. 다른 원자의 치환이 Fermi level 근처의 DOS(density of states)를 높여, ${\Delta}G_H$을 0에 가깝게 낮출 수 있음을 확인하였다. 또한 치환되는 원자의 농도, 그리고 strain을 변화시켜 농도와 strain의 증가에 따른 ${\Delta}G_H$ 감소를 발견했다. 이로써 각치환되는 원자마다, 치환 농도와 strain을 함께 변화시켜 ${\Delta}G_H$을 낮출 수 있었다. ${\Delta}G_H$가 0에 가까운(${\pm}{\pm}0.2eV$ 이내) 원자종류, 치환 농도, strain의 여러 조합을 찾았다.

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A simulation study on the structural optimization of a 800V 4H-SiC Power DMOSFET (800V급 4H-SiC DMOSFET 전력 소자 구조 최적화 시뮬레이션)

  • Choi, Chang-Yong;Gang, Min-Seok;Bang, Wook;Kim, Sang-Chul;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.35-36
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    • 2009
  • In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

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Amorphous silicon thin-film solar cells with high open circuit voltage by using textured ZnO:Al front TCO (ZnO:Al 투명전도막을 이용한 높은 개방전압을 갖는 비정질 실리콘 박막 태양전지 제조)

  • Lee, Jeong-Chul;Dutta, Viresh;Yi, Jun-Sin;Song, Jin-Soo;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.158-161
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    • 2006
  • Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

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Varistor Characteristics of ZPCCL-Based Ceramics Doped with $La_{2}o_{3}$ ($La_{2}o_{3}$가 첨가된 ZPCCL계 세라믹스의 바리스터 특성)

  • 정영철;류정선;남춘우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.415-418
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    • 2001
  • The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

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