• Journal of Magnetics
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• v.15 no.1
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• pp.25-28
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• 2010

This study examined the crystallographic and magnetic properties of vanadium-substituted lithium cobalt titanium ferrite, $Li_{0.7}Co_{0.2}Ti_{0.2}V_{0.2}Fe_{1.7}O_4$. Ferrite was synthesized using a conventional ceramic method. The samples annealed below $1040^{\circ}C$ showed X-ray diffraction peaks for spinel and other phases. However, the sample annealed above $1040^{\circ}C$ showed a single spinel phase. The lattice constant of the sample was $8.351\;{\AA}$, which was relatively unaffected by vanadium-substitution. The average grain size after vanadium-substitution was $13.90\;{\mu}m$, as determined by scanning electron microscopy. The M$\ddot{o}$ssbauer spectrum could be fitted to two Zeeman sextets, which is the typical spinel ferrite spectra of $Fe^{3+}$ with A and B sites, and one doublet. From the absorption area ratio of the M$\ddot{o}$ssbauer spectrum, the cation distribution was found to be ($Co_{0.2}V_{0.2}Fe_{0.6})[Li_{0.7}Ti_{0.2}Fe_{1.1}]O_4$. Vibrating sample magnetometry revealed a saturation magnetization and coercivity of 36.9 emu/g and 88.6 Oe, respectively, which were decreased by vanadium-substitution.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.11-15
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• 1994

The TSEE characteristics of LiF(Mg,Cu,Na,Si)phosphor for gamma and beta rays are described. The TSEE glow curve of this phosphor showed 5 peaks in the range from $20^{\circ}C$ to $400^{\circ}C$ and its main peak appeared at $240^{\circ}C$. The sensitivity of the phospor for $^{60}Co$ gamma rays was about 450counts/mR. TSEE energy dependence for various beta radiation was nearly constant (${\pm}10%$) in the mean beta particle energy range from 0.02MeV to 0.8MeV. The efficiency of TSEE of the phosphor for beta radiation was $(2{\sim}15){\times}10^{-3}$.

• Journal of the Korean Ceramic Society
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• v.24 no.4
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• pp.385-391
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• 1987

Zeta potential according to the hydration time was studied during the early hydration of C3S with and without CO2 atmosphere. Zeta potential was low as a level of 20mV at the first and second exothermic peaks of heat evolution, but it was rapidly increased up to a level of 300mV. In the CO2 atmosphere, zeta potential was level of 60mV at 10 minutes hydration and it's value became a low gradually according to the hydration time. Zeta potential was also proportioned to the Ca2+ concentration in the liquid phase, i.e., there was positive correlation between zeta potential and Ca2+ concentration. The existence of silicate layer was not found out on the hydrated C3S in the CO2 atmosphere by SEM-EDAX.

• 전기의세계
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• v.31 no.6
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• pp.445-449
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• 1982

This Paper describes the influence of additive concentrations and sintering temperature on the surge protection performance in ZnO ceramic varistors. It is found from the experiments that the metal-oxide semiconductors based oi ZnO with an additive incorporation of 0.50% molx(Bi$\_$2/O$\_$3/+MnO+CoO+Cr$\_$2/O$\_$3/+2Sb$\_$2/O$\_$3/) and sintered at 1250.deg. C present excellent V-I characteristics in view of transient surge suppression. Gapless arrester element with aluminum electrodes shows also good reliability against impulse shock and marks a low voltage clamping ratio(V$\_$1KA/V$\_$1mA/<2.0) compared with the conventional SiC varistors.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.581-588
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• 2007

To enhance the photodecomposition of concentrated ammonia into N2, Pt/V-TiO2 photocatalysts were prepared using solvothermal and impregnation methods. Nanometer-sized particles of 0.1, 0.5 and 1.0 mol% V-TiO2 were prepared solvothermally, and then impregnated with 1.0 wt% Pt. The X-ray diffraction (XRD) peaks assigned to V2O5 at 30.20 (010) and Pt metal at 39.80 (111) and 46.20 (200) were seen in the 1.0 wt% Pt/ 10.0 mol% V-TiO2. The particle size increased in the order: pure TiO2, V-TiO2 and Pt/V-TiO2 after thermal treatment at 500 °C, while their surface areas were in the reverse order. On X-ray photoelectron spectroscopy (XPS), the bands assigned to the Ti2p3/2 and Ti2p1/2 of Ti4+-O were seen in all the photocatalysts, and the binding energies increased in the order: TiO2 < Pt/V-TiO2 < V-TiO2. The XPS bands assigned to the V2p3/2 (517.85, 519.35, and 520.55 eV) and V2p1/2 (524.90 eV) in the V3+, V4+ and V5+ oxides appeared over V-TiO2, respectively, while the band shifted to a lower binding energy with Pt impregnation. The Pt components of Pt/ V-TiO2 were identified at 71.60, 73.80, 75.00 and 76.90 eV, which were assigned to metallic Pt 4f7/2, PtO 4f7/2, PtO2 4f7/2, and PtO 4f5/2, respectively. The UV-visible absorption band shifted closer towards the visible region of the spectrum in V-TiO2 than in pure TiO2 and; surprisingly, the Pt/V-TiO2 absorbed at all wavelengths from 200 to 800 nm. The addition of vanadium generated a new acid site in the framework of TiO2, and the medium acidic site increased with Pt impregnation. The NH3 decomposition increased with the amount of vanadium compared to pure TiO2, and was enhanced with Pt impregnation. NH3 decomposition of 100% was attained over 1.0 wt% Pt/1.0 mol% V-TiO2 after 80 min under illumination with 365 nm light, although about 10% of the ammonia was converted into undesirable NO2 and NO. Various intermediates, such as NO2, -NH2, -NH and NO, were also identified in the Fourier transform infrared (FT-IR) spectra. From the gas chromatography (GC), FT-IR and GC/mass spectroscopy (GC/MS) analyses, partially oxidized NO and NO2 were found to predominate over V-TiO2 and pure TiO2, respectively, while both molecules were reduced over Pt/V-TiO2.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.131-131
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• 2003

Surface micromachined uncooled IR detector with the optimized VOx bolometric layer was fabricated based on sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$. In order to improve the detectivity of the IR detector, we optimized a few factors in the viewpoint of bolometric material. Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having high temperature coefficient of resistance and low resistance because of process limits in microbolometer fabrication. In order to increase the responsivity and decrease noise, we increase TCR of bolometric material and decrease room temperature resistance based on the sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$ by conventional sputter. By oxygen diffusion through low temperature annealing of V$_2$O$_{5}$V/V$_2$O$_{5}$ in oxygen ambient, various mixed phase vanadium oxide was formed and we obtained TCR in range of-1.2 ~-2.6%/$^{\circ}C$ at room temperature resistance of 5~100k$\Omega$.mega$.

• Communications of the Korean Mathematical Society
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• v.35 no.3
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• pp.1037-1043
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• 2020

We show that if M and V are Seifert forms such that M is metabolic and has nontrivial Alexander polynomial, then there exists a knot K having Seifert form M ⊕ V that is not concordant to any knot with Seifert form V.

• Archives of Pharmacal Research
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• v.10 no.1
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• pp.14-17
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• 1987

Several new imidazo [1, 2-b] pyrazole, pyrazolo [5, 1-c]-1, 2, 4-triazine and pyrazolo [5, 1-c] triazole derivatives were prepared from the reaction of 3-antipyrinyl-5-aminopyrazole or its diazonium salt with .alpha.-chloroacetyl derivatives.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.98-102
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• 1995

The crystal structure of -Ethyl-1,4-dihydro-7-methyl-1,8-naphthyridin-4-one-3-carboxylic acid [Nalicixic Acid] has been determined from single crystal X-ray diffraction study; C12H12N2O3, monoclinic, P21/c, a=8.910(2)Å, b=13.145(3)Å, c=9.370(3)Å, β =100.06(2)°, V=1080.6Å, T=293K, Z=4, CuKα(λ=1.5418Å). The molecular structure was solved by direct method and refined by full-matrix least squares to a final R=0.055 for 1555 unique observed [F0>4σ(F0)] reflections and 166 parameters. The conformation of the molecule is stabilized by an intramolecular O(17)-H(17)…O(14) hydrogen bond [2.525(2)Å, 144.3(10)°].