• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.6
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• pp.263-269
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• 2019

The mechanism of microstructure and hardness changes during mill annealing of Ti-6Al-4V alloy was investigated. The annealing heat treatments were performed at $675{\sim}795^{\circ}C$ in vacuum for 2 hours, followed by air cooling. The microstructure was observed by using an optical microscope and X-ray diffraction, and hardness was measured by using a Rockwell hardness tester and micro Vickers hardness tester. The average grain size becomes smaller at $675^{\circ}C$ to $735^{\circ}C$ due to the formation of new grains rather than grain growth, but becomes larger at $735^{\circ}C$ to $795^{\circ}C$ due to growth of the already-formed grains rather than formation of new grains. The mill annealing temperature becomes higher, the ${\beta}$ phase fraction decreases and ${\alpha}$ phase fraction increases at room temperature. This is because the higher annealing temperature, the smaller amount of V present in the ${\beta}$ phase, and thus the ${\beta}$ to ${\alpha}$ transformation occurs more easily when cooled to room temperature. As the mill annealing temperature increases, the hardness value tends to decrease, mainly due to resolution of defects such as dislocations from $675^{\circ}C$ to $735^{\circ}C$ and due to grain growth from $735^{\circ}C$ to $795^{\circ}C$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.202-209
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• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.523-527
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• 2002

LiMn$_2$O$_4$ compounds were synthesized by calcining a mixture of LiOH and MnO$_2$(CMD) at 47$0^{\circ}C$ for 10 h and then calcining again at $650^{\circ}C$ to 90$0^{\circ}C$ fur 48 h in air with intermediate grinding. All the synthesized samples exhibited XRD patterns for the cubic spinel phase with a space group Fd3m. The lattice parameter increased gradually as the sintering temperature rose. The electrochemical cells were charged and discharged fur 20 cycles at a current density 300$\mu$A/$\textrm{cm}^2$ between 3.5 V and 4.3 V. The voltage vs. discharge capacity curves for all the samples showed two plateaus. The LiMn$_2$O$_4$ sample calcined at 90$0^{\circ}C$ had the largest first discharge capacity. This sample exhibited the best crystallinity, had relatively large lattice parameter and had relatively large particles with rectatively homogeneous size. All the samples showed good cycling performances. Among all the samples, the LiMn$_2$O$_4$ calcined at 85$0^{\circ}C$ had relatively large first discharge capacity and very good cycling performance. The addition of excess LiOH and the mixing in ethanol considered to help the formation of the more LiMn$_2$O$_4$ phase per unit weight sample and the more stable LiMn$_2$O$_4$phase. These led to the larger discharge capacities and the better cycling performances. The cyclic voltammograms fur the second cycle of the LiMn$_2$O$_4$ samples showed the oxidation and reduction peaks around 4.05 V and 4.18 V and around 4.08 V and 3.94 V, respectively. The larger first discharge capacity of the sample calcined at the higher temperature is related to the larger lattice parameter.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.30 no.4
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• pp.556-561
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• 1997

Vibrio cholerae non-O1 FM-3 was isolated from sea water, and it showed the same bacteriological characteristics as Vibrio cholerae non-O1 ATCC 25872. V. cholerae non-O1 FM-3 presented the highest hemolytic activity at stationary phase of its growth. The hemolytic activity was decreased in accordance with increasing of pretense activity of its cultural supernatant. The characteristics of the hemolysin produced by V. cholerae non-O1 FM-3 were investigated after partial purification with a Sephadex G-100 chromatography. The hemolytic activity of purified protein was stable at $4^{\circ}C$ while it was completely lost by heating at $60^{\circ}C$ for 30 min. The activity of hemolysin was increased by addition of divalent cations such as $Ca^{2+},\;Mg^{2+},\;and\;Mn^{2+}$ while it was inhibited by additions of $Zn^{2+}$. When the hemolysin was incubated with suspensions of erythrocytes at $4^{\circ}C$ and $37^{\circ}C$, respectively, hemolysis was not observed at $4^{\circ}C$ but at $37^{\circ}C$. It means that hemolysis by purified hemolysin was temperature-dependent while its binding step of hemolysin to cell membrane was temperature-independent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.142-145
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• 1993

$TiO_2-V_2O_5$ thin films are fabricated by Sol-Gel method and humidity sensing properties have been investigated. As the results of humidity sensing properties of thin films fabricated as humidity sensor, it is confirmed to have good humidity sensing properties in high humidity and low frequency regions.

• Bulletin of the Korean Chemical Society
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• v.14 no.5
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• pp.557-561
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• 1993

The interaction of vanadium(V) with various a-hydroxycarboxylate ligands in aqueous solution at pH 3.2 have been studied by $^{51}V$ and $^{13}C$ NMR spectroscopies. From the results it is supposed that vanadates mainly form the octahedral complexes with lactate, 2-hydroxybutyrate, glycerate, and malate. While, vanadates form the trigonal-bipyramidal complexes with glycolate, tartarate, and 2-hydroxy-3-methylbutyrate, and tetrahedral complexes with pyruvate(diol), 2-hydroxyisobutyrate, and 2-hydroxy-3-methylbutyrate. The bipyramidal products are formed as monomeric compounds. The octahedral products are formed as dimeric compounds with no evidence for a significant proportion of the monomeric derivatives. The complexes are mainly formed through the coordination at the carboxylate and the 2-hydroxyl groups of the ligands.

• Proceedings of the KIEE Conference
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• 2002.04a
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• pp.90-92
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• 2002

This paper presents an improved C-Dump converter system for switched reluctance motors(SRM). The proposed C-Dump converter derived from the conventional converter for SRM. The proposed converter could overcome the limitation of the conventional C-Dump converter, and could reduce the whole cost of the SRM system since the voltage stress of the dump switch $T_d$ is reduced to $V_{dc}$ when compared with $2V_{dc}$ for the conventional C-Dump converter. The attractive features of the proposed converters are; high-efficient and low-cost, elimination of dump inductor, simple control strategy, smaller size arid light weight. The proposed converter is able to be fast magnetization by $2V_{dc}$, which is sum of the input voltage and charging voltage of the dump capacitor. Also, this topology has many advantages such as freewheeling of phase winding without complex control, reduction of current ripple, reduction of torque ripple, and reduction of switching frequency. Simulation demonstrates the good performance of the converter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.349-352
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• 1999

We have investigated the electrical characteristics of arachidic acid($C_{20}$), stearic acid(C_{18} and palmitic acid($C_{16}$) Langmuir-Blodgett(LB) films because the fatty acid systems have a same hydrophilic group and a different hydrophobic one (alkyl chain length). In this work, fatty acid systems were used as LB films and the status of the deposited films were confirmed by evaluating the capacitance and I-V characteristics. The conductivity of $C_{20}$, C_{18} and $C_{16}$ LB films obtained from I-V characteristics were about 5x $10^{15}$, 3x $10^{14}$ and 9x $10^{14}$[S/cm], espectively. These results have shown the insulating materials and could control the conductivity by changing the length of alkyl chain. Also, we have confirmed that the barrier height of fatty acid systems were about 1.32- 1.40[eV] and the relative dielectric constant were about 2.9~4.2. These values were almost the same ones obtained from dielectric characteristics.