• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.161-161
• /
• 2009

Ion bombarded inorganic materials for LC alignment has been researched as it provides controllability in a nonstop process for producing high-resolution displays. Many optically transparent insulators such as $SiOx$ and a-C:H have been investigated as potential candidates for inorganic alignment materials. Even so, LC orientation on a new material with superior capacity is required to produce high-performance displays. Many inorganic materials with high permittivities can reduce the voltage losses due to the LC alignment layer that are a trade-off for its capacitance. The minimum voltage for device operation can be applied to the LC under low external voltage using these materials. This means that low power consumption for LCD applications can be achieved using a high-k alignment structure in which the LC can be driven effectively with a low threshold voltage. Among the many other potential high-k oxides, HfO2 is considered to be one of the most promising due to its remarkable properties of high dielectric constant, relatively low leakage current, large band gap (5.68 eV), and high transparency. Due to these characteristics, HfO2 can be used in LC alignment to increase the capacitance of the inorganic alignment layer for low-voltage driving of LCs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.10-10
• /
• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.

• ETRI Journal
• /
• v.42 no.4
• /
• pp.468-479
• /
• 2020

The proposed AI processor architecture has high throughput for accelerating the neural network and reduces the external memory bandwidth required for processing the neural network. For achieving high throughput, the proposed super thread core (STC) includes 128 × 128 nano cores operating at the clock frequency of 1.2 GHz. The function-safe architecture is proposed for a fault-tolerance system such as an electronics system for autonomous cars. The general-purpose processor (GPP) core is integrated with STC for controlling the STC and processing the AI algorithm. It has a self-recovering cache and dynamic lockstep function. The function-safe design has proved the fault performance has ASIL D of ISO26262 standard fault tolerance levels. Therefore, the entire AI processor is fabricated via the 28-nm CMOS process as a prototype chip. Its peak computing performance is 40 TFLOPS at 1.2 GHz with the supply voltage of 1.1 V. The measured energy efficiency is 1.3 TOPS/W. A GPP for control with a function-safe design can have ISO26262 ASIL-D with the single-point fault-tolerance rate of 99.64%.

• Proceedings of the Acoustical Society of Korea Conference
• /
• autumn
• /
• pp.401-406
• /
• 1999

In relation to a non-destructive evaluation of irradiation damages of micro-structure interstitial, void and dislocation, the changes in the hysteresis loop, Barkhausen noise amplitude and the harmonics frequency due to a neutron irradiation were measured and evaluated. The Mn-Mo-Ni low alloy steel of RPV was irradiated to a neutron fluence of $2.3\times10^{19}\;n/cm^2\;(E\geq1\;MeV)\;at\;288^{\circ}C$. The saturation magnetization of neutron irradiated metal did not change. The neutron irradiation caused the coercivity to increase, whereas susceptibility to decrease. The amplitude of Barkhausen noise parameters associated with the domain wall motion were decreased by a neutron irradiation. The spectrum of Barkhausen noise is analysed with an applied frequency of 4 Hz and 8 Hz, sampling time of $50\;{\mu}sec\;and\;20\;{\mu}sec$. The harmonic frequency shows 4 Hz, 8 Hz, 12 Hz; and 16 Hz reflected from an unirradiated specimen. On the contrary, the harmonic frequency disappeared on the irradiated specimen.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.334.2-334.2
• /
• 2016

Silicon nitride (SiNx:H) films are generally used as passivation layer on solar cell and they are usually made by plasma enhanced chemical vapor deposition (PECVD). In this study, we investigated the properties of silicon nitride (SiNx:H) films made by PECVD. Effects of mixture ratio of process gases with silane (SiH4) and ammonia (NH3) on the passivation qualities of silicon nitride film are evaluated. Passivation properties of SiNx:H are focused by making antireflection properties identical with thickness and refractive index controlled. The absorption coefficient of each film was evaluated by spectrometric ellipsometery and the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained by UV-visible spectrophotometer. The interface properties were measured by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.162-162
• /
• 2016

We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.04a
• /
• pp.1-6
• /
• 2003

In injection molding of an optical disk, a toric lens, etc., their performance depends on the transcription preciseness of fine surface structure of a mold. However, transcription behavior has not been made clear yet, because transcription is made in very short time and the structure is very small. In this paper, transcription properties have been examined, by using V-grooves of various sizes. machined on mold surfaces, and the following results are obtained. (1) Transcription properties have been made clear experimentally and it was found that the mold temperature $T_D$ makes great influence on the transcription property and that compression applying time $t_c$ should be taken more than 2.0s for fine transcription. (2) A mechanical model of transcription process, in consideration with strain recovery due to viscoelastic property of polymer. is proposed. (3) Simulation results agree with experimental ones fairly well. It means that the transcription model is useful for estimation of transcription property in advance of an actual. injection molding.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.30 no.2 s.245
• /
• pp.136-143
• /
• 2006

A particle image velocimetry (PlV) technique has been applied to measure the quantitative flow field characteristics behind a road vehicle with/without an air spoiler attached on its trunk and to estimate its effect on the wake. A vehicle model scaled in the ratio of 1/43 is set up in the mid-section of a closed-loop water tunnel. The Reynolds number based on the vehicle length is $10^5$. To investigate the three-dimensional structure of the recirculation zone and vortices, measurements are carried out on the planes both parallel and perpendicular to the free stream, respectively. The results show significant differences in the recirculation region and the vorticity distributions according to the existence of the air spoiler. The focus and the saddle point, appearing just behind the air spoiler, are disposed differently along the spanwise direction. Regarding the streamwise vortices, the air spoiler produces large wing tip vortices. They have opposite rotational directions to C-pillar vortices which are commonly observed in case that the air spoiler is absent. The wing tip vortices generate the down-force and as a result, they can make the vehicle more stable in driving.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1091-1094
• /
• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• Proceedings of the KIEE Conference
• /
• 1991.11a
• /
• pp.286-289
• /
• 1991

We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.