• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.202-202
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• 2008

실리콘 기판 위에 성장된 세륨 산화막(CeO2)은 고품질의 SOI(Silicon on Insulator)나 혹은 안정한 캐패시터 소자와 같은 반도체 소자에 대한 응용 가능성이 높아 여러 연구가 진행되어 왔다. 세륨 산화막은 형석 구조, 다시 말해서 대칭적인 큐빅 구조이며 화학적으로 안정한 물질이다. 또한, 세륨 산화막의 격자상수 (a = $5.411\AA$)는 실리콘의 격자상수 (a = $5.430\AA$) 와 비슷하며 큰 밴드갭(6eV) 및 높은 유전상수 ($\varepsilon$ = 26), 높은 열적 안전성을 지니고 있어 실리콘 기판에 사용된 기존 절연막인 사파이어나 질코늄 산화막보다 우수한 특성을 지니고 있다. 본 논문에서는 스퍼터링을 이용하여 세륨 산화막을 실리콘 기판 위에 형성하면서 기판가열 온도 조건을 각각 상온, $100^{\circ}C$, $200^{\circ}C$로 설정하였으며, 세륨 산화막의 증착 두께 조건을 각각 80nm, 120nm로 설정한 다음 퍼니스를 이용하여 $1100^{\circ}C$에서 1시간 동안 열처리를 거친 세륨 산화막의 결정화 형태 및 박막의 막질 상태를 각각 X선 회절 장치 (XRD) 및 주사전자현미경 (SEM)으로 관찰하였다.

• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.807-812
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• 2016

Transparent film heaters (TFHs) based on Joule heating are currently an active research area. However, TFHs based on an indium tin oxide (ITO) monolayer have a number of problems. For example, heating is concentrated in only part of the device. Also, heating efficiency is low because it has high sheet resistance ($R_s$). To address these problems, this study introduced hybrid layers of ITO/Ag/ITO deposited by magnetron sputtering, and the electrical, optical, and thermal properties were estimated for various thicknesses of the metal interlayer. The $R_s$ of ITO(40)/Ag/ITO(40 nm) hybrid TFHs were 5.33, 3.29 and $2.15{\Omega}/{\Box}$ for Ag thicknesses of 10, 15, and 20 nm, respectively, while the $R_s$ of an ITO monolayer (95 nm) was $59.58{\Omega}/{\Box}$. The maximum temperatures of these hybrid TFHs were 92, 131, and $145^{\circ}C$, respectively, under a voltage of 3 V. And that of the ITO monolayer was only $32^{\circ}C$. For the same total thickness of 95 nm, the heat generation rate (HGR) of the hybrid produced a temperature approximately $100^{\circ}C$ higher than the ITO monolayer. It was confirmed that the film with the lowest $R_s$ of the samples had the highest HGR for the same applied voltage. Overall, hybrid layers of ITO/Ag/ITO showed excellent performance for HGR, uniformity of heat distribution, and thermal response time.

• Membrane and Water Treatment
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• v.7 no.3
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• pp.241-255
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• 2016

In this study, the treatability of arsenic (As) contaminated water by direct contact membrane distillation (DCMD) at different delta temperatures (${\Delta}T$) 30, 40 and $50^{\circ}C$ has been investigated. Two different pore sizes ($0.22{\mu}m$ and $0.45{\mu}m$) of hydrophobic membranes made of polyvinylidene fluoride (PVDF) were used. The membrane pore sizes, the operating temperatures, the feed solution As concentration and conductivity have been varied during the experimental tests to follow the removal efficiency and flux behavior. Both membranes tested had high removal efficiency of arsenite (As (III)) and arsenate (As (V)) and all permeates presented As concentration far lower than recommended $10{\mu}g/L$ of world health organization (WHO). As concentration was below detection limit in many permeates. Conductivity reduction efficiency was over 99% and the transmembrane flux (TMF) reached $19L/m^2.h$ at delta temperature (${\Delta}T$) of $50^{\circ}C$ with PVDF $0.45{\mu}m$ membrane. The experimental results also indicated that $0.45{\mu}m$ pore sizes PVDF membranes presented higher flux than $0.22{\mu}m$ pore sizes membranes. Regardless of all operating conditions, highest fluxes were observed at highest ${\Delta}T$ ($50^{\circ}C$).

• Polymer(Korea)
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• v.27 no.1
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• pp.40-45
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• 2003

In this work, the effect of different contents of $Fe_3O_4$ and temperature variation on the electrical conductivity ($\sigma$) in the polar acrylonitrile butadiene rubber (NBR)/$Fe_3O_4$ (magnetite) mixture system was investigated. It was found that the percolation threshold concept holds true for the conductive particle-filled composites where $\sigma$ indicates a nearly sharp increase when the concentration of magnetite in the mixture exceeds 22%. The temperature dependence of $\sigma$ was thermally activated below and at the percolation threshold ($P_c$). Magnetite acted as reinforcing and conductive filler for NBR. At room temperature and higher voltages, the electrical current was proportional to the square of voltage ($I{\propto}V^2$) for the composites which contain 30 phr of magnetite. Moreover, it was shown that the composites with magnetite of 50 phr showed the highest tensile strength and elongation at break, which was due to the formation of optimal physical interlock and crosslinking. The results of 100%, 200%, and 300% Young moduli said that the moduli are largely correlated with reinforcement effect of magnetite and viscosity of the blends from torque curve.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.879-883
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• 1998

In the vacuum casting process for superalloys, molten metal are poured into the heated ceramic mold up to $1000^{\circ}C~1700^{\circ}C$. The mold has to have the high temperature strength during casting and made by hlgh purity alumina. In this sturdy, the mold was made by low purity alumina and changed silica contents intended to have high strength The 7.7wt.% SiOz specimens have 10- 55% higher strength than others in room and high temp. Therefore, the cast mold has been developed in this study for single crystal vacuum cast by controlling the ratio of fused alumina and colloidal silica which are used commercially for conventional casting in industries.

• Journal of Microbiology and Biotechnology
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• v.17 no.2
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• pp.234-243
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• 2007

Vibrio vulnificus is an opportunistic pathogen that causes septicemia in humans. To identify the genes associated with its pathogenicity, in vivo expression technology (IVET) was used to select genes specifically expressed in a host, yet not significantly in vitro. Random lacZ-fusions in the genome of V vulnificus strain MO6-24/O were constructed using an IVET vector, pSG3, which is a suicide vector containing promoterless-aph and -lacZ as reporter genes. A total of ${\sim}18,000$ resulting library clones were then intraperitoneally injected into BALB/c mice using a colony forming unit (CFU) of $1.6{\times}10^6$. Two hours after infection, kanamycin was administered at $200{mu}g$ per gram of mouse weight. After two selection cycles, 11 genes were eventually isolated, which were expressed only in the host. Among these genes, VV20781 and VV21007 exhibiting a homology to a hemagglutinin gene and tolC, respectively, were selected based on having the highest frequency. When compared to wild-type cells, mutants with lesions in these genes showed no difference in the rate of growth rate, yet a significant decrease in cytotoxicity and the capability to form a biofilm.

• Journal of Microbiology and Biotechnology
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• v.17 no.5
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• pp.822-829
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• 2007

A gene coding for phosphoketolase, a key enzyme of carbohydrate catabolism in heterofermentative lactic acid bacteria(LAB), was cloned from a Lactobacillus paraplantarum C7 and expressed in Escherichia coli. The gene is 2,502 bp long and codes for a 788-amino-acids polypeptide with a molecular mass of 88.7 kDa. A Shine-Dalgarno sequence(aaggag) and an inverted-repeat terminator sequence are located upstream and downstream of the phosphoketolase gene, respectively. The gene exhibits an identity of >52% with phosphoketolases of other LAB. The phosphoketolase of Lb. paraplantarum C7(LBPK) contains several highly conserved phosphoketolase signature regions and typical thiamine pyrophosphate(TPP) binding sites, as reported for other TPP-dependent enzymes. The phosphoketolase gene was fused to a glutathione S-transferase(GST::LBPK) gene for purification. The GST::LBPK fusion protein was detected in the soluble fraction of a recombinant Escherichia coli BL21. The GST::LBPK fusion protein was purified with a yield of 4.32mg/400ml by GSTrap HP affinity column chromatography and analyzed by N-terminal sequencing. LBPK was obtained by factor Xa treatment of fusion protein and the final yield was 3.78mg/400ml. LBPK was examined for its N-terminal sequence and phosphoketolase activity. The $K_M\;and\;V_{max}$ values for fructose-6-phosphate were $5.08{\pm}0.057mM(mean{\pm}SD)$ and $499.21{\pm}4.33{\mu}mol/min/mg$, respectively, and the optimum temperature and pH for the production of acetyl phosphate were $45^{\circ}C$ and 7.0, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.533-538
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• 2003

It has been shown that ion implantation produces remarkable improvements in surface-sensitive physical and chemical properties as well as other mechanical properties, in polymers. In this study, ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate surface hydrophilic property through contact angle measurement using distilled water. PC was irradiated with N, Ar, Xe ions at the irradiation energy of $20\;{\sim}\;50keV$ and the dose range of $5{\times}10^{15},\;1{\times}10^{16},\;7{\times}10^{16}\;ions/cm^2$. The contact angle of water has been reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural property are discussed in view of infrared spectroscopy and FT-IR, XPS, which shows increasing C-O bonding and C-C bonding. The root mean square of surface roughness examined by means of AFM changed smoothly from 0.387nm to 0.207nm and the change of wettability was discussed with respect to elastic and inelastic collisions obtained as results of TRIM simulation. It was found that wettability of the modified PC surface was affected on change of functional group and nuclear stopping or linear energy transfer(LET, energy deposited per unit track length per ion) that causes chain scission by displacing atom from polymer chains, but was not greatly dependant on surface morphology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.325-325
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• 2007

The perovskites in the $LaAlO_3-BaZrO_3$ system (i.e., $(1-x)LaAlO_3-xBaZrO_3$ were fabricated by a solid state reaction and their dielectric properties were investigated. For the compositions of x=0.1~0.9, the mixture of $LaAlO_3$ with a rhombohedral structure and $BaZrO_3$ with a cubic was observed when the sintering was conducted at $1500^{\circ}C$, indicating that the solubility of constituent elements was very low and a narrow solid solution region might exist. The large difference of ionic radii between $La^{3+}$ ion (0.136nm, C.N.=12) and $Ba^{2+}$ ion (0.161nm) or $Al^{3+}$ ion (0.0535nm, C.N.=6) and $Zr^{4+}$ ion (0.072nm) might hinder the mutual substitution. Within the compositions of x=0~0.7, the dielectric constant of the mixture increased with the amount of $BaZrO_3$, i.e., x value, which was in good agreement with the logarithmic mixing rule (In $_{r,i}={\Sigma}v_iln\;_{r,i}$). The increase in $BaZrO_3$ doping decreased $Q{\times}f$ value significantly due to the low $Q{\times}f$ value of $BaZrO_3$ itself, a poor microstructure of the mixture with an increased grain boundary area per volume, and defects in the cation and oxygen sub-lattices which were respectively caused by the evaporation of barium during the sintering process and the substitution of Ba on La-site or Al on Zr-site.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1216-1221
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• 1999

GaN films were deposited on sapphire [$Al_2O_3(0001)$] substrates at relatively low temperature by MOCVD using N-atom source based on a Dielectric Barrier Discharged method. Ammonia gas($NH_3$is commonly used as an N-source to grow GaN films in conventional MOCVD process, and heating to high temperature is required to provide sufficient dissociation of $NH_3$. We used a dielectric barrier discharge method instead of $NH_3$ to grow GaN film relatively low temperature. DBD is a type of discharge, which have at least one dielectric material as a barrier between electrode. DBD is a type of controlled microarc that can be operated at relatively high gas pressure. Crystallinity and surface morphology depend on growth temperature and buffer layer growth. With the DBD-MOCVD method, wurtzite GaN which is dominated by the (0001) reflection was successfully grown on sapphire substrate even at $700^{\circ}C$.