• Journal of the Korean Ceramic Society
• /
• v.44 no.12
• /
• pp.720-726
• /
• 2007

Current collectors of SOFC play a significant role on the performance of power generation. In this study a single cell stacked SOFC was assembled using Ag-mesh as a cathode current collector, and evaluated its performance. No gas leakages of the single cell stack occurred in the tests of gas detection and OCV measurement. The OCV and initial power of the stack were 1.09V and $0.45W/cm^2$, respectively, under the flow rates of air at 2,500 cc/min and $H_2$ at 1,000 cc/min at the test temperature of $750^{\circ}C$. A degradation rate of 44.0% was measured during the prolonged time of 307 h. The relatively low durability of the tested single cell stack was found to be the evaporation of Ag-mesh at the current corrector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.783-786
• /
• 2003

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from $V_2O_5$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure and optical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD and optical absorption measurements. The films as-deposited are amorphous, but $0%O_2$ films annealed for time longer than 4h and $8%O_2$ films annealed for time longer than 1h are polycrystalline. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Indirect and direct optical band gaps were decreased with increasing the annealing time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.11
• /
• pp.933-938
• /
• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.416-420
• /
• 2004

Varistors based on M.Matsuoka were prepared from ZnO nanopowders, every one of which had bar type and about less 100nm length. The compact green disks were conventionally sintered in air for 2 hours at a temperature of $1050^{\circ}C$. The Varistors with nonlinear coefficient ${\alpha}=45$, leakage current $I_{\ell}=2{\times}10^{-7}A/cm^2$, operating voltage 9000v/cm, and average grain size $3{\mu}m$ were obtained. The advantages of the samples were due to greater structural homogenity, higher density, smaller grain size.

• BMB Reports
• /
• v.35 no.6
• /
• pp.576-582
• /
• 2002

Collagenase from the internal organs of a mackerel was purified using acetone precipitation, ion-exchange chromatography on a DEAE-Sephadex A-50, gel filtration chromatography on a Sephadex G-100, ion-exchange chromatography on DEAE-Sephacel, and gel filtration chromatography on a Sephadex G-75 column. The molecular mass of the purified enzyme was estimated to be 14.8 kDa by gel filtration and SDS-PAGE. The purification and yield were 39.5-fold and 0.1% when compared to those in the starting-crude extract. The optimum pH and temperature for the enzyme activity were around pH 7.5 and $55^{\circ}C$, respectively. The $K_m$ and $V_{max}$ of the enzyme for collagen Type I were approximately 1.1 mM and 2,343 U, respectively. The purified enzyme was strongly inhibited by $Hg^{2+}$, $Zn^{2+}$, PMSF, TLCK, and the soybean-trypsin inhibitor.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.63-67
• /
• 2003

Electromigration characteristics of $SnAg_3Cu_{0.7}$ and eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure of two solders were observed after electromigration test, in which the temperature and the current density were varied from 90 to $110^{\circ}C$ and from $4.0\times10^4\;A/cm^2\;to\;9.2\times10^4\;A/cm^2$. In SnAgCu solders, hillocks were main]y observed near the anode end. From resistance measurements, it was calculated that the activation energy of the SnAgCu solder for electromigration was 1.04 eV And in eutectic SnPb without the effect of pads, while depleted region was found near cathode end, Sn-rich hillocks were observed near the anode end. During eutectic SnPb electromigration, it were observed that electromigration behavior had two migration modes.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1270-1271
• /
• 2008

Effects of thin ZnO/Mg interlayers on electrical and optical properties between p-GaN and ITO were characterized for its application to GaN-LEDs. The ZnO and Mg layers were deposited to have various thicknesses (1${\sim}$6nm for ZnO and 1${\sim}$2nm for Mg) by sputtering. After RTA process, the atomic migration between Mg and ZnO and the formation of Ga vacancy were observed from SIMS depth profile, resulting in the increase of hole concentration and the reduction of band bending at the surface region of p-GaN. The sample using ZnO(2nm)/Mg(2nm) interlayer produced the lowest contact resistance with SBH(Schottky barrier height) of 0.576 eV and the transmittance higher than 83% at a wavelength of 460nm when annealed at 500$^{\circ}C$ for 3min in air ambient.

• Asian-Australasian Journal of Animal Sciences
• /
• v.29 no.7
• /
• pp.965-970
• /
• 2016

This study was conducted to determine the effects of freezing and supplementation of molasses (M), lactic acid bacteria (LAB) and LAB+enzyme mixture on chemical and nutritional composition of sunflower silage (SF). Sunflower crops were harvested (at about $29.2%{\pm}1.2%$ dry matter) and half of fresh sunflower was ensiled alone and half was frozen (F) at $-20^{\circ}C$ for 7 days. Silage additives were admixed into frozen SF material. All samples were ensiled in glass jars with six replicates for 90 days. The treatments were as follows: i) positive control (non-frozen and no additives, NF), ii) negative control (frozen, no additives, F), iii) F+5% molasses (FM), iv) F+LAB (1.5 g/tons, Lactobacillus plantarum and Enterococcus faecium, FLAB); v) F+LAB+enzyme (2 g/tons Lactobacillus plantarum and Enterococcus faecium and cellulase and amylase enzymes, FLEN). Freezing silage increased dry matter, crude ash, neutral detergent fiber, and acid detergent lignin. The organic matter, total digestible nutrient, non-fiber carbohydrate, metabolizable energy and in vitro dry matter digestibility were negatively influenced by freezing treatments (p<0.05). In conclusion, freezing sunflower plants prior to ensiling may negatively affect silage quality, while molasses supplementation improved some quality traits of frozen silage. Lactic acid bacteria and LAB+enzyme inoculations did not effectively compensate the negative impacts of freezing on sunflower silage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.357.2-357.2
• /
• 2014

Ruthenium (Ru) 박막은 우수한 화학적 열적 안정성 및 높은 일함수(4.7eV) 특성으로 인해 20 nm급 이하의 차세대 DRAM capacitor의 전극 물질 및 Cu metalization을 위한 seed layer로 각광을 받고 있다. Ru박막의 나노스케일 정보전자소자로의 적용을 위해서는 두께제어가 용이하고 3D 구조에서 우수한 단차 피복 특성을 갖는 atomic layer deposition (ALD)을 이용한 박막 형성이 필수적이다. 이에 본 연구에서는 ALD 방법을 이용하여 0가의(cymene) (1,5-hexadiene) Ru (0) (C16H24Ru) 전구체를 합성, ALD 방법을 이용하여 우수한 초기성장거동을 갖는 Ru 박막을 증착 하였다. 형성된 Ru 박막의 표면 형상, 두께, 밀도를 주사전자현미경(Scanning electron microscopy)과 X-선 반사율 측정(X-ray reflectometer)으로 조사하였다. 또한 전기적 특성을 4침법(four-point-probe)으로 측정하였고, 박막의 화학적 조성과 결정성의 정보를 X-선 광전자분광법(X-ray photoelectron spectroscopy)과 X-선 회절(X-ray diffraction)을 이용하여 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.364.2-364.2
• /
• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.