• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.382-382
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• 2010

The etch characteristics of the $HfAlO_3$ thin films and selectivity of $HfAlO_3$ to $SiO_2$ in $Cl_2/BCl_3$/Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of $HfAlO_3$ to $SiO_2$ was 1.11 at $Cl_2$(3sccm)/$BCl_3$(4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of $40^{\circ}C$. As increasing RF power and DC-bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the $HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Society of Costume
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• v.59 no.2
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• pp.143-153
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• 2009

The purpose of this study is to provide color information in order to planning and merchandising in china fashion through the color of Beijing opera. In objective study, we collect total 302 Beijing opera images. The collecting method of source data is to extract digital color data by color picker. We transform RGB color data to H V/C, CIE L*a*b and analyze the attributes of color and tone, three-dimensional analysis. The results of this study are as follows : 1. The color distrbution of Beijing opera is R(26.9%)>YR(18.2%)>PB(11.6%)>Y(9.6%). Traditional preference color, red is most popular color as 26.7%:, the practice of vivid tone red is numerous. 2. The tone distribution of Beijing opera costume is P(16%)>It(13.9%)>d(11%)>5(9.6%)>4kg (8.2%)>b(7.1%:). The value o# Beijing opera costume distribute medium and medium-high and the chroma of those distributes low. 3. High chroma yellow is restrictive color as the symbol of emperor in china but medium-low chroma yellow is very frequently used. 4. Blue is often used in china costume. Especially in Beijing opera costume blue is symbol of bravery, dignity, cruel character 5. White in Beijing opera costume is much used for symbol of righteous loyalist. Black is less used than white in Beijing opera costume and black is authority color for symbol of the prime minister.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.127-135
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• 1996

To increase the sensitivity and the selectivity of the sensors to TMA gas, the composition ratio and the growth conditions of the ZnO films are studied. Annealing of the ZnO films in the various time ranges and temperatures in the oxygen is carried out to enhance the stbility of the electrical resistance. Pt/Ti heater deposited on backside of the substrates in used to control the operating temperature of th esensor. The ZnO thin film sensors doped to 4.0 wt% $Al_{2}$O$_{3}$ 1.0wt.% TiO$_{2}$ and 0.2wt.% V$_{2}$O$_{5}$ exhibited a high sensitivity and an excellent selectivity for TMA gas. The sensors made with the thin films annealed at 700$^{\circ}$C for 60 minutes in the oxygen atmosphere had a good stability and linearity. The heater deposited in the ratio of 1 to 1 (Pt:Ti) had a good heating properties. The sensors fabricated using above conditions showed a good response to the actual gases of a mackerel at a step of deterioration after death.

• Journal of Hydrogen and New Energy
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• v.28 no.6
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• pp.657-662
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• 2017

This paper presents the reversible electrolysis characteristics of a solid oxide fuel cell (SOFC) using a $10{\times}10cm^2$ anode supported planar cell with an active area of $81cm^2$. In this work, current-voltage characteristic test and reversible electrolysis cycle test were carried out sequentially for 2,114 hours at a furnace temperature of $700^{\circ}C$. The current-voltage characteristics for reversible electrolysis mode was measured at a current of ${\pm}26.7A$ under various $H_2O$ utilization conditions. The reversible electrolysis cycle was performed 50 times at a current of ${\pm}32.4A$. As a result, The performance degradation of SOEC mode was larger than that of SOFC mode.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.276-276
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• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• Journal of Pharmaceutical Investigation
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• v.14 no.2
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• pp.92-103
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• 1984

The action of debrisoquine on renal function in rabbits was studied. 1. When debrisoquine was given into ear vein, it did not affect on renal functin with smaller doses of 0.1 or 0.3mg/kg, while with higher dose of 1.0mg/kg it elicited the significant decrease of urine flow, renal plasma flow and glomerular filtration rate, and the increase of filtration fraction, and at the same time sodium excreted in urine, FENa (fractional excretion of sodium) and osmolar clearance were significantly decreased, and then it exhibited the increase of $K^+/Na^+$ ratio and no changes of $T^cH_2O$. 2. Debrisoquine (1.0mg/kg), when injected repeatedly into a vein, produced a more marked decrease of urine flow. 3. Debrisoquine induced-antidiuretic action was not affected by pretreatment with phentolamine (2mg/kg, i.v.), alpha-sympathetic blocking agent. 4. Debrisoquine given intracerebroventricularly did not produce a significant change on renal function in dose of 0.1mg/kg. These results suggest that debrisoquine produce the antidiuretic effect in rabbit, and the mechanism of its action is due to dual actions that are the decrease of hemodynamic effect and the facilitation of reabsorption of sodium in renal tubules.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.128-128
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• 2011

TTFT-LCD에 투명전극으로 사용되고 있는 IGZO 박막의 특성을 조사하기 위하여 RF magnetron sputtering을 이용하여 Ar Gas 유량 변화에 따른 IGZO 박막을 유리 기판 위에 제작하고 투명전극의 구조적, 광학적, 전기적 특성을 조사하였다. 소결된 타겟으로는 In:Ga:ZnO를 각각 1 : 1 : 2 mol%의 조성비로 혼합하여 이용하였으며, 30mm${\times}$30 mm의 Corning1737 유리기판에 Sputtering 방식으로 증착 하였다. 장비 조건으로는 Rf power를 25 W로 고정 시켰으며, 실험변수로는 초기합력은 $2.0{\times}10^{-6}$ Torr 이하로 하였으며, 증착압력은 $9.0{\times}10^{-3}$ Torr로 하였다. Ar Gas를 30, 50, 70, 90 sccm으로 변화를 주어 실험을 진행하였다. 증착온도는 실온으로 고정하였다. 분석 결과로는 Ar Gas가 30 sccm일 때 AFM분석결과 0.3 nm 이하의 Roughness를 가졌으며, XRD분석결과 34$^{\circ}$ 부근에서 (002) c-축 방향성 구조임을 확인할수 있었다. UV-Visible-NIR 측정결과 가시광선 영역에서 80% 이상의 투과도를 만족 시켰으며, Hall 측정결과 Carrier concentration $2.7{\times}10^{19}\;cm^{-3}$, Mobility 8.4 $cm^2/v_{-s}$이며, Resistivity $8.86{\times}10^{-3}$, 투명전극으로 사용 가능함을 확인할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.145-146
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• 2000

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$