• Title/Summary/Keyword: V2C

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Analysis For Impacts of Wind Farm on Distribution Protection System (풍력발전설비 도입시 보호방식영향해석에 관한 연구)

  • Kim, C.S.;Lee, D.G.;Kim, J.E.;Ryu, J.Y.;Hwang, J.S.
    • Proceedings of the KIEE Conference
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    • 2003.07a
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    • pp.390-392
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    • 2003
  • 본 논문은 새로운 풍력단지를 조성함에 있어서 이로 인해 배전계통의 보호방식에 끼치는 영향을 분석한 것이다. 분석 대상으로는 $1.6MW{\times}12$(19.2MW)의 유도발전기들로 구성되는 Wind Farm이 154kV S/S의 주변압기 직하에 전용선로로 도입되는 것으로 하여 이 때의 배전계통의 보호방식에 미치는 영향을 분석하였다.

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Design of a $3.1{\sim}10.6GHz$ CMOS Power Amplifier for UWB Application (UWB 응용을 위한 $3.1{\sim}10.6GHz$ CMOS 전력증폭기 설계)

  • Park, J.K.;Shim, S.M.;Park, J.T.;Yu, C.G.
    • Proceedings of the KIEE Conference
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    • 2007.10a
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    • pp.193-194
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    • 2007
  • This paper presents the design of a power amplifier for full-band UWB application systems using a CMOS 0..18um technology. A wideband RLC filter and a multilevel RLC matching scheme are utilized to achieve the wideband input/output matching. Both the cascade and cascode stage are used to increase the gain and to achieve gain flatness. Simulation results show that the designed amplifier provides a power gain greater than 10 dB throughout the UWB full-band(3.1-10.6GHz) and an input P1dB of -1.2dBm at 6.9GHz. It consumes 35.8mW from a 1.8V supply.

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Monolayer Rotating Ball Electronic Paper Display

  • Cha, Hye-Yeon;Lee, Choong-Hee;Lee, Sang-Moon;Kwak, Jeong-Bok;Chae, Kyoung-Soo;Lee, Hee-Bum;Lee, Young-Woo;Lee, Chong-Seo;Oh, Yong-Soo;Lee, Hwan-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.367-369
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    • 2009
  • Optically anisotropic rotating balls were disposed in a monolayer, and controllably closely packed with respect to one another in the monolayer. The close packed monolayer configuration provided high brightness and improved contrast. The monolayer rotating ball display (MRB) electrically demonstrated a fast response time of approximately 40 msec at a voltage of 30 V. Measurements of the rotation as a function of voltage led to surface charge density for the balls in the range of 3-4 ${\mu}C/m^2$.

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Characteristics of Polymer Solar Cells Depending on the Thickness of Active Layer

  • Lee, Dong-Gu;Noh, Seung-Uk;Suman, C.K.;Kim, Jun-Young;Lee, Seong-Hoon;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1204-1207
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    • 2009
  • We investigated the device performance of bulk heterojunction solar cells depending on the active layer thickness. For the systematic comparison, the polymer solar cells comprising RR-P3HT:PCBM (1:0.8 (wt%:wt%)) blend films with different thickness were characterized by impedance spectroscopy, and J-V measurement in dark and solar simulated illumination. The device with 120 nm thickness of active layer exhibited maximum power conversion efficiency of 3.5 % under AM 1.5 100mW/$cm^2$ illumination condition.

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Low Temperature Annealed Sol-Gel Aluminum Indium Oxide Thin Film Transistors

  • Hwang, Young-Hwan;Jeon, Jun-Hyuck;Seo, Seok-Jun;Bae, Byeong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.396-399
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    • 2009
  • Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as $350^{\circ}C$. They exhibit n-type semiconductor behavior, a mobility higher than 19 $cm^2/V{\cdot}s$ and an onto-off current ratio greater than $10^8$.

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Nanometer Scale Vacuum Lithography using Plasma Polymerization and Plasma Etching (플라즈마 중합과 플라즈마 에칭을 이용한 나노미터 단위의 진공리소그래피)

  • 김성오;박복기;김두석;박진교;육재호;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.131-134
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    • 1998
  • This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma po1ymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV]. ranging the dose of 1∼500[${\mu}$C/$\textrm{cm}^2$], the pattern was developed with dry tree and formed by plasma etching. By analysing of the molecule structure using FT-lR, it was confirmed that the thin films of PPMST contains the functional radicals of the MST monomer. The thin films of PPMST had a highly crosslinked structure resulting in a higher molecule weight than the conventional resist.

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Temperature dependance of Leakage Current of Nitrided, Reoxided MOS devices (질화, 재산화시진 모스 절연막의 온도 변화에 따른 누설전류의 변화)

  • 이정석;장창덕;이용재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.71-74
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    • 1998
  • In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

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Low frequency Band Pass Filter Design for IR Receiver IC (적외선 수신 IC에 적합한 저주파 대역통과필터(Band Pass Filter)의 설계)

  • Choi, Bae-Kun;Ryu, Seung-Tak;Hong, Young-Wook;Kim, Jae-Hyup;Lee, Min-Chul;Cho, Gyu-Hyeong
    • Proceedings of the KIEE Conference
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    • 2000.07d
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    • pp.3127-3129
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    • 2000
  • 본 논문에서는 광 다이오드에서 들어오는 신호로부터 원하는 대역의 신호를 얻기 위한 적외선 수신 IC에 적합한 대역통과필터를 설계하였다 설계한 대역통과필터는 2차 Biquad gm-C 필터의 구조를 이용하여 중심주파수가 38kHz. Quality factor가 10인 필터를 구현하였다. 구현된 대역통과필터는 필터부분과 중심주파수를 보정해 주는 frequency tuning 부분으로 구성되어 있다. 낮은 transconductance와 높은 선형성을 요구하는 transconductor의 설계를 위해 Gilbert 곱셈기 특성을 이용하여 구현하였고 AMS사의 0.8${\mu}m$ BiCMOS model을 사용하여 +5V로 동작되도록 설계 하였다

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Effect of annealing of Pb(La,Ti)$O_3$ thin films by Pulsed laser deposition process (펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 연구)

  • Hur, Chang-Hoi;Shim, Kyung-Suk;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1483-1484
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    • 2000
  • Dielectric thin films of PLT(Pb(La.Ti)O3) for the application of highly integrated memory devices have been deposited on Pt/Ti/SiO2/Si substrates in situ by pulsed laser deposition(PLD). We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. Both in-situ annealing and ex-situ annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)$O_3$ films.

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Deposition of DLC film by using an FCVA system with a magnetic mirror and characterization of its material properties (거울형 자계 구조를 갖는 진공 여과 아크 증착법을 이용한 다이아몬드상 탄소 박막의 증착 및 물성 분석)

  • PARK, Chang-Kyun;UHM, Hyun-Seok;SEO, Soo-Hyung;PARK, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1717-1719
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    • 2000
  • DLC films are deposited by using an FCVA deposition system with a mirror-type magnetic field configuration. Permanent magnets and: magnetic yokes around the cathode have been observed to enhance the mobility of arc spots on the cathode and the stability of arc plasma, Effects of reactor pressures and substrate biases on structural properties of DLC films deposited are investigated. The results show that the highest $sp^{3}/sp^{2}$ fraction is obtained when the films are deposited at a pressure of $3{\times}10^4$ Torr and a bias voltage of - 50 V. The variation of the structural properties due to thermal stress up to 500$^{\circ}C$ is also examined.

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