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Determination of Abamectin Residue in Paprika by High-Performance Liquid Chromatography

  • Xie, Wen-Ming;Ko, Kwang-Yong;Kim, Sung-Hun;Chang, Hee-Ra;Lee, Kyu-Seung
    • Korean Journal of Environmental Agriculture
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    • v.25 no.4
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    • pp.359-364
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    • 2006
  • Reversed-phase high-performance liquid chromatography (HPLC) techniques were developed to quantify abamectin (ABM) in paprika (Capsicum annum). Separation was achieved on a $C_{18}$ ODS column with a mobile phase of acetonitrile/water (96/4, v/v) mixture in an isocratic elution at the flow tate of 1.2 mL/min for avermectins (AVMs). The retention times were 8.0 and 9.7mins for AVM $B_{lb}$ and AVM $B_{1a}$, respectively. Residual AVMs (sum of AVM $B_{1a}$, AVM $B_{1b}$ and 8,9-Z-AVM $B_{1a}$) in the vegetable were extracted with acetonitrile, and the silica solid-phase extraction cartridges were used to purify the extract. AVMs were derivatized using trifluoroacetic acid and 1-methylimidazole, and the derivatives were determined with a fluorescence detector (excitation at 365 nm and emission at 470 nm). High and consistent recoveries, ranging from 93% to 115%, were obtained for AVM $B_{1a}$ and 8, 9-Z-AVM $B_{1a}$ at fortified levels of $20{\mu}g/kg\;and\;200{\mu}g/kg$ for paprika. The limit of quantitation (LOQ) was $2{\mu}g/kg$. The residual levels of AVMs in paprika in a field experiment from one day to seven days after the last application decreased from 18.40 to $7.59{\mu}g/kg$. The half-life $(T_{1/2})$ of AVMs in paprika was 1.47 days.

Characteristics and Hair Growth Efficacy of Water Dissolving Micro-needles Containing Minoxidil Regarding Length of Micro-needles (미녹시딜을 내포한 용융형 고분자 마이크로 니들의 길이에 따른 특성 및 발모 효능 관찰)

  • Han, Mee-Ree;Kim, Eun-Young;Jung, Yong-Hyun;Kim, Myoung-Seok;Park, Jung-Hwan
    • Polymer(Korea)
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    • v.37 no.3
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    • pp.393-398
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    • 2013
  • Two types of polymeric micro-needles with 250 and $750{\mu}m$ lengths were prepared by a micromolding process. The geometry of dissolving micro-needles with minoxidil was investigated and the mechanical property of polymer micro-needles was also evaluated. Water dissolving micro-needles containing minoxidil were successfully inserted into skin and delivered minoxidil to the skin layer after 30 min of insertion. The observed hair growth was less when the minoxidil treatment was not applied or used without the micro-needles than that the minoxidil was applied by micro-needles. Histologically, these hair follicles became bigger, and the hair papillae were totally encircled by the hair bulbs. In this feasibility test, we show the successful delivery of minoxidil, and effective treatment of hair loss can be possible by using dissolving micro-needles with minoxidil.

Particle-in-cell simulation feasibility test for analysis of non-collective Thomson scattering as a diagnostic method in ITER

  • Zamenjani, F. Moradi;Asgarian, M. Ali;Mostajaboddavati, M.;Rasouli, C.
    • Nuclear Engineering and Technology
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    • v.52 no.3
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    • pp.568-574
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    • 2020
  • The feasibility of the particle-in-cell (PIC) method is assessed to simulate the non-collective phenomena like non-collective Thomson scattering (TS). The non-collective TS in the laser-plasma interaction, which is related to the single-particle behavior, is simulated through a 2D relativistic PIC code (XOOPIC). For this simulation, a non-collective TS is emitted from a 50-50 DT plasma with electron density and temperature of ne = 3.00 × 1013 cm-3 and Te = 1000 eV, typical for the edge plasma at ITER measured by ETS system, respectively. The wavelength, intensity, and FWHM of the laser applied in the ETS system are λi,0 = 1.064 × 10-4 cm, Ii = 2.24 × 1017 erg=s·㎠, and 12.00 ns, respectively. The electron density and temperature predicted by the PIC simulation, obtained from the TS scattered wave, are ne,TS = 2.91 × 1013 cm-3 and Te,TS = 1089 eV, respectively, which are in accordance with the input values of the simulated plasma. The obtained results indicate that the ambiguities rising due to the contradiction between the PIC statistical collective mechanism caused by the super-particle concept and the non-collective nature of TS are resolved. The ability and validity to use PIC method to study the non-collective regimes are verified.

Physicochemical and Sensory Properties of Yogurt Supplemented with Corni fructus during Storage

  • Noh, Hyo Ju;Seo, Hye Min;Lee, Jun Ho;Chang, Yoon Hyuk
    • Preventive Nutrition and Food Science
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    • v.18 no.1
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    • pp.45-49
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    • 2013
  • This study was carried out to determine a possibility of adding Corni fructus extract (CFE) into yogurt for improving the neutraceutical properties of yogurt and the effects of adding CFE (2~6%, v/v) on the physicochemical and sensory properties of the products during a 15-day storage period at $4^{\circ}C$. Incorporation of CFE into the yogurt samples resulted in a significant pH reduction and a significant increase in titratable acidity. When evaluating the color of the yogurt, the $L^*$-values were not significantly influenced by CFE supplementation; however, the $a^*$- and $b^*$-values significantly increased with the addition of CFE during storage. The power law and Casson models were applied to assess the flow behavior of CFE-added yogurt samples. The magnitudes of apparent viscosity (${\eta}_{a,100}$), consistency index (K), and yield stress (${\sigma}_{oc}$) for 4~6% CFE yogurt samples were significantly greater than those for the control, indicating that CFE can be used as a thickening agent for yogurt. The sensory test revealed that addition of CFE (2~4%) to yogurt did not significantly affect the overall scores, but the overall preference score for 6% CFE yogurt was significantly decreased. Based on the data obtained from the present study, we concluded that the concentrations (2~4%) of CFE could be used to produce a CFE-added yogurt without the significantly adverse effects on the physicochemical and sensory properties.

The Controller Design of a 2.4MJ Pulse Power Supply for a Electro-Thermal-Chemical Gun (전열화학포용 2.4MJ 펄스 파워 전원의 제어기 설계)

  • Kim, Jong-Soo;Jin, Y.S.;Lee, H.S.;Rim, Geun-Hie;Kim, J.S.
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.55 no.12
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    • pp.511-517
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    • 2006
  • The key issues in high power, high energy applications such as electromagnetic launchers include safety, reliability, flexibility, efficiency, compactness, and cost. To explore some of the issues, a control scheme for a large current wave-forming was designed, built and experimentally verified using a 2.4MJ pulse power system (PPS). The PPS was made up of eight capacitors bank unit, each containing six capacitors connected in parallel. Therefore there were 48 capacitors in total, with ratings of 22kV and 50kJ each. Each unit is charged through a charging switch that is operated by air pressure. For discharging each unit has a triggered vacuum switch (TVS) with ratings of 200kA and 250kV. Hence, flexibility of a large current wave-forming can be obtained by controlling the charging voltage and the discharging times. The whole control system includes a personal computer(PC), RS232 and RS485 pseudo converter, electric/optical signal converters and eight 80C196KC micro-controller based capacitor-bank module(CBM) controllers. Hence, the PC based controller can set the capacitor charging voltages and the TVS trigger timings of each CBM controller for the current wave-forming. It also monitors and records the system status data. We illustrated that our control scheme was able to generate the large current pulse flexibly and safely by experiments. The our control scheme minimize the use of optical cables without reducing EMI noise immunity and reliability, this is resulting in cost reduction. Also, the reliability was increased by isolating ground doubly, it reduced drastically the interference of the large voltage pulse induced by the large current pulse. This paper contains the complete control scheme and details of each subsystem unit.

Single Crystalline CoFe/MgO Tunnel Contact on Nondegenerate Ge with a Proper Resistance-Area Product for Efficient Spin Injection and Detection

  • Jeon, Kun-Rok;Min, Byoung-Chul;Lee, Hun-Sung;Shin, Il-Jae;Park, Chang-Yup;Shin, Sung-Chul
    • Proceedings of the Korean Magnestics Society Conference
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    • 2010.06a
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    • pp.96-96
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    • 2010
  • We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the crystalline CoFe(5 nm)/MgO(1.5,2.0,2.5 nm)/n-Ge(001) tunnel contacts have been investigated by I-V-T and C-V measurements. Interestingly, the tunnel contact with the 2-nm MgO exhibits the ohmic behavior with low resistance-area products, satisfying the theoretical conditions required for significant spin injection and detection. This result is ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.

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Surface Plasmon Effect in Hot Electron Based Photovoltaic Devices

  • Lee, Yeong-Geun;Jeong, Chan-Ho;Park, Jong-Hyeok;Park, Jeong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.162-162
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    • 2011
  • Nanometer-sized noble metals can trap and guide sunlight for enhanced absorption of light based on surface plasmon that is beneficial for generation of hot electron flows. A pulse of high kinetic energy electrons (1-3 eV), or hot electrons, in metals can be generated after surface exposure to external energy, such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not at thermal equilibrium with the metal atoms. It is highly probable that the correlation between hot electron generation and surface plasmon can offer a new guide for energy conversion systems [1-3]. We show that hot electron flow is generated on the modified gold thin film (<10 nm) of metal-semiconductor (TiO2) Schottky diodes by photon absorption, which is amplified by localized surface plasmon resonance. The short-circuit photocurrent obtained with low energy photons (lower than bandgap of TiO2, ~3.1-3.2 eV) is consistent with Fowler's law, confirming the presence of hot electron flows. The morphology of the metal thin film was modified to a connected gold island structure after heating to 120, 160, 200, and 240$^{\circ}C$. These connected island structures exhibit both a significant increase in hot electron flow and a localized surface plasmon with the peak energy at 550-570 nm, which was separately characterized with UV-Vis [4]. The result indicates a strong correlation between the hot electron flow and localized surface plasmon resonance with possible application in hot electron based solar cells and photodetectors.

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Preparation of Cadmium-free Buffer Layers for CIGS Solar Cells (CIGS 태양전지용 Cd-Free 버퍼층 제조)

  • Moon, Jee Hyun;Kim, Ji Hyeon;Yoo, In Sang;Park, Sang Joon
    • Applied Chemistry for Engineering
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    • v.25 no.6
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    • pp.577-580
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    • 2014
  • Indium hydroxy sulfide ($In(OH)_xS_y$) as a cadmium (Cd)-free buffer layer for $CuInGaSe_2$ (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for $In(OH)_xS_y$ buffer layer deposition by CBD was 20 min at $70^{\circ}C$ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.

A Kinetic Study on the Growth of Nanocrystalline Diamond Particles to Thin Film on Silicon Substrate

  • Jung, Doo-Young;Kang, Chan-Hyoung
    • Journal of Surface Science and Engineering
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    • v.44 no.4
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    • pp.131-136
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    • 2011
  • A kinetic study has been made for the growth of nanocrystalline diamond (NCD) particles to a continuous thin film on silicon substrate in a microwave plasma chemical vapor deposition reactor. Parameters of deposition have been microwave power of 1.2 kW, the chamber pressure of 110 Torr, and the Ar/$CH_4$ ratio of 200/2 sccm. The deposition has been carried out at temperatures in the range of $400\sim700^{\circ}C$ for the times of 0.5~16 h. It has been revealed that a continuous diamond film evolves from the growth and coalescence of diamond crystallites (or particles), which have been heterogeneously nucleated at the previously scratched sites. The diamond particles grow following an $h^2$ = k't relationship, where h is the height of particles, k' is the particle growth rate constant, and t is the deposition time. The k' values at the different deposition temperatures satisfy an Arrhenius equation with the apparent activation energy of 4.37 kcal/mol or 0.19 eV/ atom. The rate limiting step should be the diffusion of carbon species over the Si substrate surface. The growth of diamond film thickness (H) shows an H = kt relationship with deposition time, t. The film growth rate constant, k, values at the different deposition temperatures show another Arrhenius-type expression with the apparent activation energy of 3.89 kcal/mol or 0.17 eV/atom. In this case, the rate limiting step might be the incorporation reaction of carbon species from the plasma on the film surface.

Design of 6bit CMOS A/D Converter with Simplified S-R latch (단순화된 S-R 래치를 이용한 6비트 CMOS 플래쉬 A/D 변환기 설계)

  • Son, Young-Jun;Kim, Won;Yoon, Kwang-Sub
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.11C
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    • pp.963-969
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    • 2008
  • This paper presents 6bit 100MHz Interpolation Flash Analog-to-Digital Converter, which can be applied to the Receiver of Wireless Tele-communication System. The 6bit 100MHz Flash Analog-to-Digital Converter simplifies and integrates S-R latch which multiplies as the resolution increases. Whereas the conventional NAND based S-R latch needed eight MOS transistors, this Converter was designed with only six, which makes the Dynamic Power Dissipation of the A/D Converter reduced up to 12.5%. The designed A/D Converter went through $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process to be a final product, and the final product has shown 282mW of power dissipation with 1.8V of Supply Voltage, 100MHz of conversion rate. And 35.027dBc, 31.253dB SFDR and 4.8bits, 4.2bits ENOB with 12.5MHz, 50MHz of each input frequency.