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Electrical Conduction and Dielectric Properties of Epoxy/Organophilic Clay Nanocomposite

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.1
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    • pp.43-46
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    • 2013
  • In order to develop electrical insulation material, organically modified layered silicate was incorporated into an epoxy matrix to prepare nanocomposite. Transmission electron microscopy (TEM) observation showed that organophillic clay was in an exfoliated state, while hydrophilic clay was not dispersed into nanolayers within the epoxy matrix. Epoxy/organophilic clay (2.8 wt%) nanocomposite was mixed and cured at $150^{\circ}C$ for 4.5 hr. I-V characteristics, volume resistance and dielectric properties for the cured nanocomposite were estimated. Current density increased with increasing temperature, and volume resistance decreased with increasing temperature, in neat epoxy and epoxy/organophilic clay (2.8 wt%) nanocomposite. As frequency increased, the dielectric loss value decreased in the two systems.

Effect of Electric Field Frequency on the AC Electrical Treeing Phenomena in an Epoxy/Reactive Diluent/Layered Silicate Nanocomposite

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.2
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    • pp.87-90
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    • 2014
  • The effects of electric field frequency on the ac electrical treeing phenomena in an epoxy/reactive diluent/layered silicate (1.5 wt%) were carried out, in needle-plate electrode arrangement. A layered silicate was exfoliated in an epoxy base resin, by using our ac electric field apparatus. To measure the treeing propagation rate, constant alternating current (AC) of 10 kV with three different electric field frequencies (60, 500 and 1,000 Hz) was applied to the specimen, in needle-plate electrode arrangement, at $30^{\circ}C$ of insulating oil bath. As the electric field frequency increased, the treeing propagation rate increased. At 500 Hz, the treeing propagation rate of the epoxy/PG/nanosilicate system was $0.41{\times}10^{-3}$ mm/min, which was 3.4 times slower than that of the epoxy/PG system. The electrical treeing morphology was dense bush type at 60 Hz; however, as the frequency increased, the bush type was changed to branch type, having few branches, with very slow propagation rate.

Field emission characteristics of ZnO nanowires grown at liquid phase (액상에서 성장한 ZnO 나노와이어의 전계방출 특성연구)

  • No, I.J.;Kim, S.H.;Cho, J.W.;Park, G.B.;Kim, Y.H.;Lee, D.C.;Shin, P.K.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1347_1348
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    • 2009
  • We fabricated FEDs based on ZnO nanowires. ZnO nanowires were synthesized on Au thin films by hydrothermal method on hot plate. After 2 hours, we obtained nanowires of chin form. The high-purity nanowires showed sharp tips geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1 V/${\mu}m$ at a current density of $0.1{\mu}A/cm^2$.

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Ethanol Fermentation in Lactose Medium Using a Fusant Strain of Saccharomyces cerevisiae and Kluyveromyces fragilis

  • Lee, Chu-Hee;Yang, Sun-A;Rho, Ju-Won;Lee, Seung-Yup
    • Journal of Microbiology and Biotechnology
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    • v.2 no.2
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    • pp.108-114
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    • 1992
  • The fermentative characteristics in ethanol production from lactose, with increased ethanol tolerance, of a fusant yeast strain constructed by protoplast fusion of Saccharomyces cerevisiae and Kluyveromyces fragilis were studied. The ethanol tolerance of this strain was increased to 8.0%, compared with the parent K. fragilis. During batch ethanol fermentation the optimal cultivation conditions for this fusant yeast were an initial pH of 4.5, a culture temperature $30^\circ{C}$. stirring at 100 rpm without aeration in 10% lactose medium (supplied with 1.0% yeast extract). Using this fusant strain in whey fermentation to ethanol, maximum ethanol production reached 3.41% (w/v) (theoretical yield; 66.7%) after a 48 hour cultivation period.

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An Analysis of Circular Polarization Characteristics in the Microcell Environments (마이크로 셀 환경에서의 원편파 특성 해석)

  • 김성명;김병옥;하인철;하덕호
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.10a
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    • pp.157-161
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    • 2000
  • 본 논문은 2린 대역의 마이크로 셀 환경에서 원편파 특성을 분석하기 위하여 편파의 특성을 이론적 해석과 실제 측정 데이터를 비교 검토하였다. 가시거리에서는 원편파가 기수회 반사파 수신을 억제하기 때문에 다중경로 페이딩에 대한 경감 효과가 있다는 것은 널리 알려져 있다. 본 연구팀은 "E"자형 건물의 회절 음영 지역에서도 원편파의 편파 특성이 잘 유지되는지를 측정 분석하였다. 이를 위해 정선회 원편파(C), 역선회 원편파(X), 수직편파(V), 수평편파(H) 안테나를 사용하여 각각의 송수신 편파간 조합에 대하여 거리에 따른 전계강도를 이동 측정하였다. 전파 모델은 "E"자형 건물의 회절지역 모델에서 2개의 경로를 선택하여 각각에 대한 전파의 편파 특성을 분석하였다.대한 전파의 편파 특성을 분석하였다.

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Electronic properties of PZT(20/80) thick film and PZT(80/20) thin film multilayer with variation of sintering temperature (다층 PZT(20/80)후막과 PZT(80/20)박막의 소결온도에 따른 전기적 특성)

  • Noh, Hyun-Ji;Lee, Sung-gap;Park, Sang-Man;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2006.07a
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    • pp.577-578
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    • 2006
  • In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

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Electrical Properties of Fabrication PZT Capacitors by Chemical Mechanical Polishing Process (화학적 기계적 연마 공정으로 제조한 PZT 캐패시터의 전기적 특성)

  • Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.370-371
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    • 2006
  • 본 연구에서는 PZT박막의 강 유전 캐패시터 제작을 위한 연구로, 4-inch크기의 $SiO_2$/Pt/Ti/Si가 증착된 웨이퍼를 습식 식각하여 $SiO_2$ 패턴(0.8um)을 형성하였고, PZT박막의 캐패시터 제작을 위해 패턴 웨이퍼에 $Pb_{1.1}$($Zr_{0.52}Ti_{0.48}$)$O_3$조성을 갖는 PZT를 증착하였다. $600^{\circ}C$에서 열처리 후 페로브스카이트 구조를 가지는 PZT 박막의 CMP(chemical mechanical polishing) 공정에 따른 전기적 특성을 연구하였다. 강유전체 소자 적용을 위한 CMP 공정으로 제조된 PZT 박막 캐패시터의 P-E특성, I-V특성, 피로특성 등의 전기적 특성을 측정하였다.

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A New Anthracnose of Neoregelia carolinae Smith var. tricolor Hort. Caused by Colletotrichum gloeosporioides Penz. (Colletotrichum gloeosporioides Penz에 의한 Neoregelia carolinae Smith var. tricolor Hort. 炭疽病)

  • Kim, Wan-Gyu
    • The Korean Journal of Mycology
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    • v.15 no.2
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    • pp.116-117
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    • 1987
  • 1985년 9월, 경기지방의 꽃 재배온실에서 네오레게리아(Neoregelia carolinae Smith var, tricolor Hort.)에 탄저병징이 심하게 발생하여, 병반에서 병원균을 분리, 동정한 결과 Colletotrichum gloeosporioides Penz.에 의한 것으로 밝혀졌다. 이 균은 PDA배양에서 완전세대 Glomerella cingulata (Stonem.) Spauld. & v. Sch.의 자낭과 자낭포자를 형상하였다. 병징은 2-5mm 크기로 원형 내지 타원형의 적갈색 반점이며, 반점 주위는 황색을 띄었다. 병이 심하게 진전되면 잎의 대부분이 황갈색으로 변하여 말라 죽었다. 이 균의 분생포자현탁액을 네오레게리아에 분무접종한 결과 병원성이 확인되었다. C. gloeosporioides에 의한 네오레게리아 탄저병은 아직까지 보고된 바 없으므로 새로운 탄저병으로 보고한다.

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11CrMoVNb 페라이트계 내열강의 크리프 파단 시간에 따른 미세조직의 변화

  • Lee, Gyu-Ho;Heo, Ju-Yeol;Jeong, U-Sang
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.57.2-57.2
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    • 2011
  • MX 석출물 형성 원소인 V과 Nb을 첨가한 11Cr-1Mo-VNb 페라이트계 내열강의 각각의 시험 온도에서 파단 시간에 따른 미세조직의 변화를 연구하였다. 초기 조직은 템퍼드 마르텐사이트 조직을 갖고 있었으며, 고온 강도를 저하시키는 ${\delta}$-페라이트는 존재하지 않았다. 주 석출상은 $M_{23}C_6$와 MX로 확인되었다. 또한, 모든 크리프 파단재에서 응력을 받은 게이지 부분이 응력을 받지 않은 그립 부분보다 석출물 및 마르텐사이트 래스 폭의 성장이 가속되는 결과를 나타내었다. 이는 크리프 변형 중 응력 집중에 의해 래스 경계를 따라 전위가 집적되고, 이에 따른 용질원자의 확산 속도가 증가하여 석출물의 성장에 따른 래스 경계의 이동이 일어나 게이지 부분이 그립 부분보다 마르텐사이트 회복이 가속된 것으로 판단된다.

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Novel Oxide Thin Film Transistors for Transparent AMOLED

  • Cho, Doo-Hee;Yang, Shin-Hyuk;Byun, Chun-Won;Lee, Jeong-Ik;Hwang, Chi-Sun;Kopark, Sang-Hee;Chu, Hye-Yong;Cho, Kyoung-Ik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1101-1104
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    • 2008
  • We have fabricated the transparent TFTs using new oxide material (AZTO: Al-doped zinc tin oxide) as an active layer. The AZTO TFT showed good performance without post-annealing. The electrical characteristics were improved by the post-annealing up to $300^{\circ}C$. The AZTO TFTs exhibited a mobility of $8{\sim}12\;cm^2/Vs$, a sub-threshold swing of 0.2~0.6 V/dec, and an on/off ratio of more than $10^9$.

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