• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• The Korean Journal of Physiology and Pharmacology
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• v.12 no.3
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• pp.111-115
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• 2008

The effects of (-)-epigallocatechin gallate (EGCG) on pacemaker activities of cultured interstitial cells of Cajal (ICC) from murine small intestine were investigated using whole-cell patch-clamp technique at $30^{\circ}C$ and $Ca^{2+}$ image analysis. ICC generated spontaneous pacemaker currents at a holding potential of -70 mV. The treatment of ICC with EGCG resulted in a dose-dependent decrease in the frequency and amplitude of pacemaker currents. SQ-22536, an adenylate cyclase inhibitor, and ODQ, a guanylate cyclase inhibitor, did not inhibit the effects of EGCG. EGCG-induced effects on pacemaker currents were not inhibited by glibenclamide, an ATP-sensitive $K^+$ channel blocker and TEA, a $Ca^{2+}$-activated $K^+$ channel blocker. Also, we found that EGCG inhibited the spontaneous $[Ca^{2+}]_i$ oscillations in cultured ICC. In conclusion, EGCG inhibited the pacemaker activity of ICC and reduced $[Ca^{2+}]_i$ oscillations by cAMP-, cGMP-, ATP-sensitive $K^+$ channel-independent manner.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.206-210
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• 2013

In the segmented-in-series solid-oxide fuel cells (SIS-SOFCs), fabrication techniques which use decalcomania paper have many advantages, i.e., an increased active area of the electrode; better interfacial adhesion property between the anode, electrolyte and cathode; and improved layer thickness uniformity. In this work, a cell-stack was fabricated on porous ceramic flattened tube supports using decalcomania paper, which consists of an anode, electrolyte, and a cathode. The anode layer was $40{\mu}m$ thick, and was porous. The electrolyte layers exhibited a uniform thickness of about $20{\mu}m$ with a dense structure. Interfacial adhesion was improved due to the dense structure. The cathode layers was $30{\mu}m$ thick with porous structure, good adhesion to the electrolyte. The ohmic resistance levels at 800, 750 and $700^{\circ}C$ were measured, showing values of 1.49, 1.58 and $1.65{\Omega}{\cdot}cm^2$, respectively. The polarization resistances at 800, 750 and $700^{\circ}C$ were measured to be 1.63, 2.61 and $4.17cm^2$, respectively. These lower resistance values originated from the excellent interfacial adhesion between the anode, electrolyte and cathode. In a two-cell-stack SOFC, open-circuit voltages(OCVs) of 1.915, 1.942 and 1.957 V and maximum power densities(MPD) of 289.9, 276.1 and $220.4mW/cm^2$ were measured at 800, 750 and $700^{\circ}C$, respectively. The proposed fabrication technique using decalcomania paper was shown to be feasible for the easy fabrication of segmented-in-series flattened tube SOFCs.

• Journal of Surface Science and Engineering
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• v.47 no.2
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• pp.81-85
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• 2014

Ga doped ZnO (GZO)/Al bi-layered films were deposited on the glass substrate by RF and DC magnetron sputtering and then vacuum annealed at different temperatures of 100, 200 and $300^{\circ}C$ for 30 minutes to consider the effects of annealing temperature on the structural, electrical and optical properties of the films. For all depositions, the thicknesses of the GZO and Al films were kept constant at 95 and 5 nm, respectively, by controlling the deposition time. As-deposited GZO/Al bi-layered films showed a relatively low optical transmittance of 62%, while the films annealed at $300^{\circ}C$ showed a higher transmittance of 81%, compared to the other films. In addition, the electrical resistivity of the films was influenced by annealing temperature and the lowest resistivity of $9.8{\times}10^{-4}{\Omega}cm$ was observed in the films annealed at $300^{\circ}C$. Due to the increased carrier mobility, 2.35 $cm^2V^{-1}S^{-1}$ of the films. From the experimental results, it can be concluded that increasing the annealing temperature enhanced the optical and electrical properties of the GZO/Al films.

• Korean Journal of Clinical Pharmacy
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• v.18 no.1
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• pp.11-17
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• 2008

아미카신은 그람음성균 감염에 사용하는 아미노글리코사이드계 항생제로 이독성 및 신독성 등의 부작용과 큰 개인차로 혈중농도 모니터를 통한 투여계획이 필요한 약물이다. 본 연구에서는 16명의 위암환자에서 비선형최소자승 회귀분석과 베이시안 분석에 의한 아미카신의 약물동태에 분석오차의 영향을 연구하였다. 약물투여는 아미카신 7.5 mg/kg을 30분에 걸쳐 12시간 간격으로 등속 주입하였으며, 혈액 채취는 정상상태에 도달되었다고 판단되는 첫 약물투여 72시간 후에, 약물 주입 5분전과 주입이 끝난 뒤 30분과 2시간에서 세차례 채취하였다. 혈청중 약물농도는 형광편광면역법으로 측정하였다. 분석오차를 위해 0, 5, 15, 30, 60 및 $80\;{\mu}g/ml$에 해당하는 아미카신 혈중농도(C)을 네차례 측정하여 각 혈중농도의 표준편차 (SD)을 구하였다 아미카신 분석오차를 위한 다항식이 $SD=0.3017+(0.00538C)+(0.00112C^2)$, $R^2=0.974$이었다 이 식에서 구한 SD 값으로 분석시 가중치를 주었을 때, 비선형최소자승 회귀분석에 의한 아미카신의 약물동태학적 파라메타($V_d$, $K_{el}$, $K_{slpoe}$, $t_{1/2}$)에 유의성있는 영향을 주었으나, 베이시안 분석에 의한 아미카신의 약물동태학적 파라메타에는 영향이 없었다. 이 다항식에 의한 분석오차를 비선형최소자승 회귀분석에 의한 아미카신 약물동태학적 파라메타 분석시 적절히 사용하면 안전하고 효율적인 투여계획을 할 수 있다.

• Journal of the Mineralogical Society of Korea
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• v.4 no.2
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• pp.99-107
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• 1991

Three fully dehydrated fully Rb+-exchanged zeolite A single crystals have been prepared by the reduction of all Na+ ions in dehydrated Na12-A by rubidium vapor at various experimental conditions (220 $\leq$ T $\leq$ 33$0^{\circ}C$, 2 $\leq$ t $\leq$24 hours, and 0.1 $\leq$ PRb $\leq$ 1.1 Torr). Their structures were determined by single-crystal X-ray diffraction methods in the space group {{{{ RHO }}m3m (a=12.245(3) A) at 22(1)$^{\circ}C$. In these structures 12.6(2) to 13.5(2) Rb species are found per unit cell, more than the 12 Rb+ ions needed to balance the anionic charge of the zeolite framework, indication that the sorption of Rb0 has occurred. In each structure, three Rb+ ions per unit cell are located at the centers of 8-rings. Beyond that, the fractional occupancies observed are simply explained by two unit cell arrangments. In one, two Rb+ ions are in the sodalite unit near opposite 6-rings, six are in the large cavity near 6-ring, and one is in the large cavity near a 4-ring. In the other, three Rb species in the sodalite cavity (forming a triangle 3.7 A on an edge) each bond (3.4 A) through a 6-ring to an Rb species in the large cavity to give an (Rb6)4+ cluster of symmetry 3m (C3V). Five additional Rb+ ions fill the remaining large-cavity 6-ring sites.

• Journal of Surface Science and Engineering
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• v.42 no.4
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• pp.152-156
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• 2009

Electroless plating is influenced by kinds of parameters including concentrations of electrolyte, plating time, temperature and so on. In this study, the Pt thin films were prepared on GaAs substrate by a 2-step electroless plating depending method. The small Pt catalytic particles by using Pt I bath exhibited islands-morphology dispersed throughout the substrate surface at $65^{\circ}C$, as function as a sensitized thin film, and then a thicker Pt film grew upon the sensitized layer by the second Pt II bath. As the growth of Pt film is strongly influenced by the plating time and temperature, the plating time of Pt II bath varied from 5 min to 40 min at $60{\sim}80^{\circ}C$ after Pt I bath at $60{\sim}80^{\circ}C$ for 5 min. It is found that the film grows with the increasing plating time and temperature. The resistivity value of Pt deposited layer was characterized to study the growth mechanism of 2-step plating.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.834-838
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• 2011

This research shows the electrical characteristic using excellent epoxy nano-composite of MgO 5.0 wt% and $SiO_2$ 0.4 wt% in mechanical strength test depending on nano-additive. First of all, volume resistance depending on nano-additive and temperature using high resistance meter (HP. 4329A) by increasing 10, 100, 1,000 V of applying voltage was measured. Moreover, temperature range of $25{\sim}120^{\circ}C$ with virgin sample was tested using TO-9B oven by Ando Company. The result showed that virgin and the samples added with MgO and $SiO_2$ had similar value of volume resistance in low temperature and low electric field region and reduced with slow slope. The nano-composite's volume resistance of sample added with MgO and $SiO_2$ had higher value than virgin sample's volume resistance in high temperature region more than $80^{\circ}C$. Moreover, the slope has steeply reduced. The volume resistance of sample added with MgO 5.0 wt% was $8.38{\times}10^{13}\;{\Omega}{\cdot}cm$ and it was 6.8 times more than virgin sample in high temperature at $120^{\circ}C$. The insulation characteristics were constant although filler has changed in low temperature region. But, in high temperature region, the value of volume resistance of sample with MgO 5.0 wt% was 7.6 times more than the virgin sample's volume resistance.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.100-105
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• 1995

Nitrogen implantation process has been applied for improvement of wear resistance of Zircaloy-4 fuel cladding materials. Nitrogen was implanted at 120keV to a total dose range of $1\times 10^{17}$ions/$\textrm{cm}^2$ to $1\times 10^{18}$ions/$\textrm{cm}^2$ at various temperatures between $270^{\circ}C$ and $671^{\circ}C$. The microstructure changes by nitrogen implantation were analyzed by XRD and AES and wear behavior was evaluated by performing ball-on-disc type wear testing at various loads and sliding velocities under unlubricated condition. Nitrogen implantation produced ZrNx nitride above $3\times 10^{17}$ions/$\textrm{cm}^2$ as well as heavy dislocations, which resluted in an increase in microhardness of the implanted surface of up to 1400 $H_k$ from 200 $H_k$ of unimplanted substrate. Hardness was also found to be increased with increasing implantation temperature up to 1760 $H_k$ at $620^{\circ}C$. The wear resistance was greatly improved as total ion dose and implantation temperature increased. The effective enhancement of wear resistance at high dose and temperature is believed to be due to the significant hardening associated with high degree of precipitation of Zr nitrides and generation of prismatic dislocation loops.