• Journal of Korean Society for Atmospheric Environment
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• v.20 no.6
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• pp.773-781
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• 2004

Ceramic foams prepared from silica -clay were coated with TiO$_2$ and V$_2$O$_{5}$ catalysts for selective catalytic reduction of NOx with NH$_3$. The effects of V$_2$O$_{5}$ loading, reaction temperature, space velocity, and oxygen content on NOx reduction with NH$_3$ were mainly investigated. Also, the NOx reduction characteristics of V$_2$O$_{5}$ and V$_2$O$_{5}$ -TiO$_2$ filters were compared when sulfur dioxide exists. From the results, the optimal NOx reduction with the maximum reduction efficiency of 91 % could be performed under the condition with V$_2$O$_{5}$ loading 6.0 wt. %, reaction temperature 35$0^{\circ}C$, space velocity 6,000h$^{-1}$ , and oxygen content 5%. And, the V$_2$O$_{5}$ -TiO$_2$ filters have shown higher NOx reduction efficiency and acid resistance against sulfur dioxide than the V$_2$O$_{5}$ filters.

• Journal of Korea Foundry Society
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• v.10 no.2
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• pp.119-128
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• 1990

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.6
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• pp.28-36
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• 1997

In this work, a highly linear video-speed CMOS current-mode digital-to-analog converter (DAC) is proposed. A newswitching scheme for the current cell matrix of the DAC simultaneously reduces graded and symmetrical errors to improve integral nonlinearities (INL). The proposed DAC is designed to operate at any supply voltage between 3V and 5V, and minimizes the glitch energy of analog outputs with degliching circuits developed in this work. The prototype dAC was implemented in a LG 0.8um n-well single-poly double-metal CMOS technology. Experimental results show that the differential and integral nonlinearities are less than .+-. LSB and .+-.0.8LSB respectively. The DAC dissipates 75mW at a 3V single power supply and occupies a chip area of 2.4 mm * 2.9mm.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.316-323
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• 2004

HTS transformer is one of the most promising devices to supply enough electric energy for quick increase consumption. However, for practical design of the HTS transformer, it is necessary to establish the research on breakdown, V-t characteristics, degradation, and so on. In this paper, we discussed breakdown characteristics and V-t characteristics of polyimide/L$N_2$ and glass fiber reinforced plastic/$LN_2$ composite insulations. These composite insulations have been used as turn-to-turn and layer-to-layer insulations for HTS transformer respectively, Moreover, we investigated the degradation of these insulation samples after breakdown using microscope and SEM photograph.

• Biomolecules & Therapeutics
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• v.16 no.2
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• pp.168-172
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• 2008

The present study is to determine of sensitive nicorandil analysis method using HPLC and measure the pharmacokinetics parameters (bioavailability, $C_{max}$, $T_{max}$, Ke, $T_{1/2}$) of nicorandil (5 mg, Tab; Choongwae Pharma Corporation). Plasma (500 ul) was mixed with furosemide (internal standard, 500 ug/ml). Detection wavelength was 256 nm. The mixture of 0.01 M ammonium acetate and acetonitrile 80:20 (v/v) was used mobile phase. The HPLC separation was accomplished on ODC reverse HPLC column. The nicorandil was analyzed by a HPLC system, which consists of CAPCELL PAK C18 column (5 ${\mu}$m, 4.6 × 150 mm) and a chromatography data analysis S/W, using a isocratic mobile phase (mixture of 0.01 M ammonium acetate and acetonitrile 80:20 ) at 1.0 ml/min. Its sensitivity, selectivity, accuracy and precision must be adequate for the bioavailabilty study of nicorandil, and the linearity ($r^2$ ≥ 0.9994) of nicorandil was also proved in the range of 0.05 ug/ml . 3 ug/ml. The pharmacokinetic parameters of nicorandil (5 mg) tablets were measured as the follow. AUC: 0.19 ug/ml·hr, $C_{max}$: 0.14 ug/ml, $t_{max}$: 0.58 hr, Ke: 0.11 hr., $t_{1/2\beta}$: 6.76 hrs. This method is simple and sensitive HPLC method using UV detector for determination of nicorandil in human plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.1-265.1
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• 2016

여러 application에 적용하기 위하여 p-type SnO 박막과 전극 간의 접촉 저항을 분석이 필요하였다. 이를 Transmission Line Method(TLM) 패턴 소자를 제작한 후 전기적 특성을 분석함으로써 알 수 있었다. $Si/SiO_2$ 기판에 Reactive Magnetron Sputtering법을 이용하여 c축 우선 배향된 SnO를 100nm 증착하고 photolithography 공정을 통해 전극을 패턴화하여 100nm 두께로 증착하였다. 전극 간 거리는 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, $1024{\mu}m$로 각각 2배씩 증가하는 패턴이고 폭 W는 $300{\mu}m$ 이다. p-type SnO 의 경우, work function이 4.8eV이기 때문에 전극과 ohmic contact이 되기 위해서는 4.8eV보다 높은 work function 값을 가지는 전극이 필요하였다. 이 조건과 맞는 후보로 Ni(5.15eV), ITO(5.3eV)를 설정한 후 소자를 제작하였다. 제작된 소자는 열처리 하지 않은 소자와 Rapid Thermal Annealing(RTA) 장비에서 $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$에서 각각 1분씩 열처리한 소자의 특성을 분석하였다. 열처리 하지 않은 소자의 경우 Ni 전극의 specific contact resistance는 $3.42E-2{\Omega}$의 값을 나타내었고, ITO의 경우 $3.62E-2{\Omega}$값을 나타내었다.

• Nutritional Sciences
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• v.6 no.2
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• pp.100-105
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• 2003

Small dense LDL(LDL III) is emerging as a major risk factor for coronary artery disease. LDL III generation is associated with high triglyceride concentration, high hepatic lipase activity, and high cholesterol ester transfer protein (CETP) levels. CETP polymorphisms have been reported to be associated with coronary artery disease. In this study, we investigated the relationship between CETP polymorphism and LDL III generation. VLDL1, VLDL2, IDL and LDL subfractions were measured in 87 normal healthy Korean subjects who had been SNP genotyped for Taq1B, I405v and A629C. We found no differences in LDL subfractions and lipoprotein composition between homozygotes for Taq1B2B2, and those for Taq1B1B1 and Taq1B1B2. There were no differences in LDL subfractions and lipoprotein composition between homozygotes for 629AA, and those for 629AC and -629CC. However, homozygotes for 405VV had a significantly lower LDL III concentration and proportion than those for 405II and 405IV. We concluded that, among the Taq1B, I405V and A629C polymorphisms, only the 1405V polymorphism was associated with the concentration and proportion of LDL III.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.9-12
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• 1998

Film characteristics of thin reoxidized nitrided oxides were investigated by SIMS analysis and C-V method in order to use the gate dielectric for charge-trap type NVSMs instead of ONO stacked layers. Nitric oxide(NO) annealed film has the nitrogen content sharply peaked at the Si-SiO$_2$ interface, while it is broad for nitrous oxide($N_2$O) ambient. The nitrogen peak concentration increased with anneal temperature and time. The position of nitrogen content in the oxide layer was due to be precisely controlled. For the films annealed NO ambient at 80$0^{\circ}C$ for 30min. followed by reoxidized at 85$0^{\circ}C$, the maximum memory window of 3.5V was obtained and the program condition was +12V, 1msec for write and -l3V, 1msec for erase.