• Journal of Environmental Science International
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• v.14 no.2
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• pp.221-230
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• 2005

Catalytic wet oxidation of trichloroethylene (TCE) in water has been conducted using $TiO_2-supported$ cobalt oxides at $36^{\circ}C$ with a weight hourly space velocity of $7,500\;h^{-1}.\;5\%\;CoO_x/TiO_2$, prepared by using an incipient wetness technique, might be the most promising catalyst for the wet oxidation although it exhibited a transient behavior in time on-stream activity. Not only could the bare support be inactive for the wet decomposition reaction, but no TCE removal also occurred by the process of adsorption on $TiO_2$ surface. The catalytic activity was independent of all particle sizes used, thereby representing no mass transfer limitation in intraparticle diffusion. XPS spectra of both fresh and used Co surfaces gave different surface spectral features for each $CoO_x,\;Co\;2P_{3/2}$ binding energy for Co species in the fresh catalyst appeared at 781.3 eV, which is very similar to the chemical states of $CoTiO_x$ such as $CO_2TiO_4\;and\;CoTiO_3$. The used catalyst exhibited a 780.3-eV main peak with a satellite structure at 795.8 eV. Based on XPS spectra of reference Co compound, the TCE-exposed Co surfaces could be assigned to be in the form of mainly $Co_3O_4$. XRD patterns for $5\%\;CoO_x/TiO_2$ catalyst indicated that the phase structure of Co species in the catalyst even before reaction is quite comparable to the diffraction lines of external $Co_3O_4$ standard. A model structure of $CoO_x$ present predominantly on titania surfaces would be $Co_3O_4$, encapsulated in thin-film $CoTiO_x$ species consisting of $Co_2TiO_4$ and $CoTiO_3$, which may be active for the decomposition of TCE in a flow of water.

• The Korean Journal of Mycology
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• v.20 no.1
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• pp.37-43
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• 1992

Typhula incarnata grew over a temperature range of -5 to $20^{\circ}C$ with maximum growth at 10 to $15^{\circ}C$. Sclerotial production for T. incarnata was greatest at the higher temperature. Maximum mycelial growth of this pathogen occurred from pH 5.4 to 6.2. When carbon sources were added to a basal salt medium (Czapek's dox agar) at 5 g carbon sources/l, inulin, soluble starch, galactose, glucose, mannose, manitol, sucrose, maltose, cellobirose, trehalose, raffinose, and dextrin supported growth better than other carbon sources did. Of the twenty-three nitrogen sources tested, glycine, serine, ammonium sulfate, asparagine, asparatic acid, and ${\beta}-alanine$ were the most favorable for mycelial growth of T. incarnata. Cystine and cysteine were poor nitrogen sources. Ammonium salt of nitrogen sources supported growth better than nitrate salt of nitrogen sources. Potato dextrose agar, oat meal agar, and V-8 juice agar were the most favorable for mycelial growth and sclerotial formation. Appropriate addition of pepton to PDA decreased mycelial dry weight, but sucrose supported good growth of T. incarnata. Percent viable sclerotia of T. incarnate buried in bentgrass soil decreased from 2 months after treatment remarkably. Trichoderma riride and bacteria were isolated from non-germinated sclerotia. Live orchard grass leaf pieces within the soil were colonized by T. incarnata better than sterile and unsterile dead leaf pieces at $0^{\circ}C$. Saprophytic ability of T. incarnate on sterile leaf sheath occurred better at $0^{\circ}C$ than at $10^{\circ}C$. Saprophytic microflora consisting of Cladosporium sp., Fusarium sp., Mucor sp., Pythium sp., and unidentified fungi were the competitors for the sterilized and unsterilized substrate, but their colonization was not find on live leaf sheath buried in the soil at $0^{\circ}C$. In the effect of fungicides to Typhula snow mold disease of creeping bentgrass, mixture of polyoxin and thiram was the most effective, followed by iprodione, mixture of iprodione and oxine copper, thiophanate-methyl, myclobutanil, and tolclofos-methyl.

• Journal of the Korean Institute of Landscape Architecture
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• v.16 no.2
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• pp.43-57
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• 1988

The purpose of this thesis is to suggest objective basic data for park management proposal through the quantitative analysis of users' behaviors and satisfaction for the actual conditions of management in the Chiri Mountain National Park. For this users' behaviors and socio-economic characteristics have been cross-analyzed. Specifically, it attempts to investigate users' anticipate and degree of satisfaction applied Expectancy Theory by Likert attitude scale. Users'behaviors patterns of each site have been analyzed by the factor analysis algorithm, and each factor scores of sites have been clustered by the cluster method. And also user' satisfaction for the actual conditions of management have been analyzed by using the multiple regression. The major user groups were students and youth groups accompanied by their friends ranging from 3 to 10. The values of user'post occupancy-evaluation for such as rockwall climbing and praying on the mountain of each site showed higher than those of anticipated, but evaluation values of other activities were lower. The user'behaviors of each site have been analyzed five factors by factor analysis algorithm. By using the control method for the number of factors, T.V. has been obtained as 50.58%. The factor score of factor covering the behavior patterns of student and youth yield high EV. and C.V.. On the analysis of cluster using factor score, factor IV in Hwaomsa temple site and Ssanggyesa temple site, factor II, v in Jungsanri Valley site, factor, I, III in Bangmudong valley site and factor I. IV in Baemsagol vallry site showed very high values, respectively. According to the multiple regression analysis, the major variables related to the satisfaction for the actual conditions of vegetation and landscape managements were reservation of groundcover, recovery of artificial injury, the surroundings of camping and temple site. In the park facilities and operation, the major variables related to the satisfaction were conditions of management such amenity facilities as privy, sign board, junk yard, camping site, and guidance of excursion, campaign and preservation of nature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.27-35
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• 2008

This work proposes a 14b 150MS/s 0.13um CMOS ADC for SDR systems requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC employs a calibration-free four-step pipeline architecture optimizing the scaling factor for the input trans-conductance of amplifiers and the sampling capacitance in each stage to minimize thermal noise effects and power consumption at the target resolution and sampling rate. A signal- insensitive 3-D fully symmetric layout achieves a 14b level resolution by reducing a capacitor mismatch of three MDACs. The proposed supply- and temperature- insensitive current and voltage references with on-chip RC filters minimizing the effect of switching noise are implemented with off-chip C filters. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates a measured DNL and INL within 0.81LSB and 2.83LSB, at 14b, respectively. The ADC shows a maximum SNDR of 64dB and 61dB and a maximum SFDR of 71dB and 70dB at 120MS/s and 150MS/s, respectively. The ADC with an active die area of $2.0mm^2$ consumes 140mW at 150MS/s and 1.2V.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.278-282
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• 2010

The doping effect of thulium on electrical properties and degradation behavior in barium titanate ceramics ($BaTiO_3$) was investigated in terms of generations of core-shell structure and micro-chemical changes through highly accelerated degradation test. The dielectric specimens of pellet type and multi-layered sheets were prepared by using $BaTiO_3$ with undoped and doped with 1 mol% $Tm_2O_3$. The $BaTiO_3$ ceramics doped with 1 mol% $Tm_2O_3$ had 40% higher dielectric constant (${\varepsilon}$ = 2700) than that of the undoped $BaTiO_3$ specimen at curie temperature and met X7R specification. According to the result of highly accelerated degradation test conducted at $150^{\circ}C$, 70 V, and 24 hr, the oxygen diffusion was declined in dielectrics doped with 1 mol% $Tm_2O_3$. The $Tm^{3+}$ ion substituted selectively Ba site and Ti site and contributed to the generation of the core-shell structure. Oxygen vacancies occurred by substitution for Ti site could reduce excess oxygen that reacted to the Ni electrode.

• Journal of the Korean Society of Radiology
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• v.11 no.2
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• pp.157-165
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• 2017

The active transport characteristics of $K^+$ and $Na^+$ pumping system of cell membrane model which irradiated by high energy x-ray(linac 6MeV) was investigated. The cell membrane model used in this experiment was a $Na^+$ type sulfonated copolymerized membrane of styrene and divinylbenezene. The initial flux of the ion was increased with increase of both $H^+$ ion concentration. In this experiment range(pH 1.5-5, temperature $36.5^{\circ}C$), the initial flux of $K^+$ which was not irradiated by radiation was found to be from $2.09{\times}10^{-4}$ to $1.32{\times}10^{-3}mole/cm^2{\cdot}h$ and that of $Na^+$ from $7.09{\times}10^{-4}$ to $1.09{\times}10^{-3}mole/cm^2{\cdot}h$. the initial flux of $K^+$ which was irradiated by radiation was found to be from $21.0{\times}10^{-4}$ to $16.7{\times}10^{-3}mole/cm^2{\cdot}h$ and that of $Na^+$ from $62.0{\times}10^{-4}$ to $20.6{\times}10^{-3}mole/cm^2{\cdot}h$. The ratio $K^+$/$Na^+$ of membrane was about 1.10. And the driving force of pH of irradiated membrane was significantly increased about 9-20 times than membrane which was not irradiated. As active transport of $K^+$ and $Na^+$ of cell membrane model were abnormal, cell damages were appeared at cell.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.78.2-78.2
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• 2012

최근 PRAM의 집적도 향상 및 3차원 적층에 의한 메모리 용량 향상을 위해 셀 선택 스위치로서 박막형 Ovonic Threshold Switching (OTS) 소자를 적용한 Cross bar 구조의 PRAM이 제안된 바 있다. OTS 소자는 비정질 칼코지나이드를 핵심층으로 하는 2단자 소자로서 고저항의 Off 상태에 특정 값 (문턱스위칭 전압) 이상의 전압을 가해주면 저저항의 On 상태로 바뀌고 다시 특정 값 (유지전압) 이하로 전압을 감소시킴에 따라 고저항의 Off 상태로 복원하는 특성을 갖는다. 셀 선택용 스위치로 적용되기 위해서는 핵심적으로 On-Off 상태간의 가역적인 변화 중에도 재료가 비정질 구조를 안정하게 유지해야 하며 전기적으로는 Off 상탱의 저항이 크고 또한 전류값의 점멸비가 커야 한다. GeSe는 이원계 재료로서 단수한 구성에도 불구하고 OTS 소자가 갖추어야할 기본적인 특성을 가지는 것으로 알려져 있다. 본 연구에서는 GeSe로 구성된 OTS 재료에 경원소인 질소를 첨가하여 비정질 상태의 안정성과 소자특성의 개선 효과를 조사하였다. RF-puttering 시 Ar과 $N_2$의 혼합 Gas를 사용하여 조성이 $Ge_{62}Se_{38}$ ($N_2$ : 3%)인 박막을 제작하여 DSC를 통해 결정화온도(Tx)를 확인하였고, $N_2$ gas의 함유량이 각각 1 %, 2 %, 3 %인 $Ge_{62}Se_{38}$인 박막을 전극의 접촉 부 면적이 $10{\times}10\;{\mu}m^2$인 cross-bar 구조의 소자로 제작하여 Threshold switching voltage ($V_{th}$), Delay time ($t_d$), $I_{on}/I_{off}$ 그리고 Endurance 특성을 평가하였다. DSC 분석 결과 $N_2$ 가 3 % 첨가된 GeSe 박막은 Tx가 $371^{\circ}C$에서 $399^{\circ}C$로 증가되었다. $N_2$가 1% 첨가된 GeSe 소자를 측정한 결과 $V_{th}$의 변화 없는 가운데 $I_{on}/I_{off}$이 약 $2{\times}10^3$에서 $5{\times}10^4$로 향상되었다. Endurance 특성 역시 $10^4$에서 $10^5$번으로 향상되었다. $t_d$의 경우 비정질 상태의 저항 증가로 인해 약 50% 증가되었다. 이러한 $N_2$의 첨가로 인한 비정질 GeSe 박막의 변화 원인에 대한 분석 결과를 소개할 예정이다.

• Analytical Science and Technology
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• v.19 no.3
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• pp.239-243
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• 2006

This method is used for the determination of itraconazole in human plasma by liquid-liquid extraction and high performance liquid chromatography. Felodipine was used as an internal standard. After extraction of the plasma with diethyl ether, the centrifuged upper layer was then transferred. The supernantant was evaporated and then reconsituted with mobile phase. The mobile phase was composed of 10 mM ammonium acetate adjusted to pH 7 by phosphoric acid with a flow rate of 0.2 mL/min. A C18 reversed-phase column with a pre-column was used as the analytial column. Linear detection responses were obtained for itraconzole concentration range for 2~1,000 ng/mL. The correlation coefficient of linear regression($R^2$) was 0.9991, limit of quantification (LOQ) was 2 ng/mL, reproducibility was less than 10.8 %, and accuracy was 97.2~108.2%. This method has been successfully applied to the pharmacokinetic study of itraconazole in human plasma.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.