• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.178-184
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• 1995

SiO2 위에 as-dep. 비정질 Si1-xGex 합금박막을 증착하기 위하여 Si2H6 와 GeH4 가스를 사용한 저압 화학 기상증착(LPCVD)에 관하여 연구하였다. 증착온도는 $400-500^{\circ}C$였으며, 공정압력은 0.5-1Torr 였다. 박막내의 Ge 함량은 온도 및 증착가스의 유량이 일정하면 공정압력이 증가함에 따라 증가하였고, 공정압력 및 증착가스의 유량이 일정하면 증착온도에 관계없이 일정하였다. 일정한 Si2H6가스의 표면반응은 박막내의 Ge 원자에 의해 촉진됨을 알 수 있었다. 조성이 일정한 Si1-xGex 박막의 증착속도는 증착온도 증가에 따라 Arrhenius 형태로 증가하여, Si, Si0.84Ge0.16,Si0.69Ge0.31박막증착의 활성화에너지는 각각 1.5, 1.13, 1 eV로서 박막내의 Ge함량이 증가함에 따라 활성화 에너지는 감소하였다.

• Magazine of the Korean Society of Agricultural Engineers
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• v.12 no.2
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• pp.1960-1964
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• 1970

Underdrainage has been studied by using PVC suction pipes in the low and wet Paddy field: Fist, three test plot and three control plots were set and drainage methods and Soil tempratures in the test plots have been examined. The experiment was conducted making use of the 'NONG-RIM No, 4'(Wheat) 'DOWON' (rice barley), a recommended variety. Test period was from September, to December, 1969. The experimental methodsand results obtained through this experimontation are as follows: 1) Ground water level in the test plot goes down by 34 cm. 2) In sprouting, control plot is earlier than test plot by three days. 3) The rate of sprouting is equal.

• Bulletin of the Korean Mathematical Society
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• v.43 no.3
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• pp.589-598
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• 2006

In the present investigation, sharp upper bounds of $|a3-{\mu}a^2_2|$ for functions $f(z)=z+a_2z^2+a_3z^3+...$ belonging to certain subclasses of starlike and convex functions with respect to symmetric points are obtained. Also certain applications of the main results for subclasses of functions defined by convolution with a normalized analytic function are given. In particular, Fekete-Szego inequalities for certain classes of functions defined through fractional derivatives are obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.697-700
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• 2001

In this paper, the structural and electrical properties of the Sr$_{1-x}$ Ca$_{x}$TiO$_3$ (0$\leq$x$\leq$0.2) (0$\leq$r$\leq$0.2)-based grain boundary layer ceramics were investigated by X-ray, SEM and V-I system. Increasing the Ca content, the average grain size and the lattice constant were decreased. The relative density of all specimens was >96%. The 2nd phase formed by thermal diffusing from the surface lead to a very excellent electrical properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C< $\pm$ 10%.\pm$ 10%.%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.72-75
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• 2001

In this paper, the $Sr_{1-x}Ca_{x}TiO_{3}(0{\leq}x{\leq}0.2)$ 2)-based grain boundary layer ceramics were fabricated to measured dielectric properties and voltage-current properties. The sintering temperature and time were $1420\sim1520^{\circ}C$, 4hours, in $N_{2}$ gas, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The 2nd phase formed by thermal diffusion from the surface lead to a very high apparent dielectric constant, $\varepsilon_r$ > 50000. X-ray diffraction patterns exhibited cubic structure for all specimens. Increasing content of Ca, the peak intensity were decreased.ﱇﶖ⨀ਆᘍ܀㘱㔮㠹㬅K䍄乍

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.59.2-59.2
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• 2011

We have demonstrated ink-jet printed indium tin oxide (ITO) and indium tin zinc oxide (IZTO) electrodes for cost-efficient organic solar cells (OSCs). By ink-jetting of crystalline ITO nano-particles and performing a rapid thermal anneal at $450^{\circ}C$, we were able to obtain directly patterned-ITO electrodes with an average transmittance of 84.14% and a sheet resistance of 202.7 Ohm/square without using a conventional photolithography process. The OSCs fabricated on the directly patterned ITO electrodes by ink-jet printing showed an open circuit voltage of 0.57 V, short circuit current of 8.47 mA/cm2, fill factor of 44%, and power conversion efficiency of 2.13%. This indicates that the ITO directly-patterned by ink-jet printing is a viable alternative to sputter-grown ITO electrodes for cost-efficient printing of OSCs due to the absence of a photolithography process for patterning and more efficient ITO material usage.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.05c
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• pp.385-390
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• 1996

Cs는 AW500 에서 높은 분배계수 값(K$_{Cs}$>$10^3$$m\ell$/g)을 얻었으며 , Sr은 13X, 평형 용액의 pH=10의 조건에서 최대의 분배계수값(K$_{Sr}$~$10^4$$m\ell$/g)을 보였고, 평형용액의 pH 증가에 따라서 급격히 증가하는 경향을 보였다. 또한 AW500-Cs와 13X-Sr계는 고액비, 즉 V/m=40, 및 초기용액의 pH가 3 이상에서 최대의 분배계수 값을 얻었으며, 혼합제올라이트의 비(AW500/13X)가 1.5인 조건에서 Cs과 Sr을 효과적으로 동시에 분리할 수 있음 보았다. 그리고 1,10$0^{\circ}C$에서 배소한 AW500-Cs는 CsAlSi$_2$O$_{6}$로 재결정되며 , 13X-Sr은 SrAI$_2$Si$_2$O$_{8}$ 및 SiO$_2$상(phase)으로 재결정한다.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3299-3302
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• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.85-92
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• 2001

Thin films of ZnO and Al doped ZnO were prepared by rf magnetron sputter techniques. When the oxygen fraction in Ar-O$_2$ sputter gas was about 2.0%, the films exhibited the composition of Zn:O=1.05:1. The films prepared at 250 W contain larger grains than the films grown at 100 W. However, high deposition rate seems to deteriorates the crystallinity as well as Al-substitution, resulting in lower concentration of mobile electrons. The Al-doped ZnO films which were deposited at $500^{\circ}C$ show resistance of 1$\times$10$^-2$ Wcm; optical band gap of the films ranges from 3.25 to 3.40 eV. These electrical and optical features are related with microstructural as well as crystalline characteristics of the films.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1692-1696
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• 2006

Dopant and host molecules for charge transport layer in OLED have been developed. They enable implementation of the PIN OLED technology in mass production. We review the status of PIN OLED with main focus on top-emission structures and operation stability at elevated temperatures. A green phosphorescent top-emission device with 2.5 V operating voltage and 90 lm/W at 1000 $cd/m^2$ is presented. For a red top-emission device, lifetime exceeding 100,000 h at 500 $cd/m^2$ initial brightness is reported. Operational stability at $80^{\circ}C$ has been investigated. A lifetime of 17,000 h at 500 $cd/m^2$ has been achieved. Finally, we comment on further reduction of the operating voltage in OLED.